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Article: Trap-assisted conduction in nitrided-oxide and re-oxidized nitrided-oxide n-channel metal-oxide-semiconductor field-effect transistors

TitleTrap-assisted conduction in nitrided-oxide and re-oxidized nitrided-oxide n-channel metal-oxide-semiconductor field-effect transistors
Authors
Issue Date1993
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1993, v. 73 n. 12, p. 8353-8358 How to Cite?
AbstractThe off-state leakage characteristics of n-channel metal-oxide- semiconductor field-effect transistors with pure oxide, low-partial pressure nitrided (LPN) oxide, re-oxidized LPN, and nitrogen-annealed LPN oxide as the gate insulator, were investigated over the temperature range 300-400 K. In the high-field region (above 7 MV/cm), the gate-induced drain leakage was found to be due to band-to-band tunneling for all samples. Low-field conduction was determined to be due to a gate current which was many orders of magnitude higher than the Fowler-Nordheim current observed in capacitors on the same wafers. A trap-assisted tunneling model was employed, using a trap energy of 0.7 eV determined from the activation data, in order to explain the low-field gate current. The most likely cause of this enhanced conduction is oxide degradation in the gate-to-drain overlap region created during the source/drain implant.
Persistent Identifierhttp://hdl.handle.net/10722/155402
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorFleischer, Sen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorCheng, YCen_US
dc.date.accessioned2012-08-08T08:33:18Z-
dc.date.available2012-08-08T08:33:18Z-
dc.date.issued1993en_US
dc.identifier.citationJournal Of Applied Physics, 1993, v. 73 n. 12, p. 8353-8358en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/155402-
dc.description.abstractThe off-state leakage characteristics of n-channel metal-oxide- semiconductor field-effect transistors with pure oxide, low-partial pressure nitrided (LPN) oxide, re-oxidized LPN, and nitrogen-annealed LPN oxide as the gate insulator, were investigated over the temperature range 300-400 K. In the high-field region (above 7 MV/cm), the gate-induced drain leakage was found to be due to band-to-band tunneling for all samples. Low-field conduction was determined to be due to a gate current which was many orders of magnitude higher than the Fowler-Nordheim current observed in capacitors on the same wafers. A trap-assisted tunneling model was employed, using a trap energy of 0.7 eV determined from the activation data, in order to explain the low-field gate current. The most likely cause of this enhanced conduction is oxide degradation in the gate-to-drain overlap region created during the source/drain implant.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleTrap-assisted conduction in nitrided-oxide and re-oxidized nitrided-oxide n-channel metal-oxide-semiconductor field-effect transistorsen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.354086en_US
dc.identifier.scopuseid_2-s2.0-36449004115en_US
dc.identifier.volume73en_US
dc.identifier.issue12en_US
dc.identifier.spage8353en_US
dc.identifier.epage8358en_US
dc.identifier.isiWOS:A1993LH22900048-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridFleischer, S=7103394445en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridCheng, YC=27167728600en_US

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