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Title	Author(s)	Issue Date	Views
A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k gate dielectric Journal:Microelectronics Reliability	JI, F XU, JP LIU, L TANG, WM Lai, PT	2016	8
Artificial Topological Superconductor by the Proximity Effect Journal:Physical Review Letters	Xu, JP Liu, CH Wang, MX Ge, JF Liu, ZL Yang, XJ Chen, Y Liu, Y Xu, ZA Gao, CL Qian, D Zhang, F Jia, JF	2014	93
Comparative study of high-K HfLaON and HfON as charge-storage layer of MONOS memory Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010	Liu, L Xu, JP Huang, XD Ji, F Lai, PT	2010	90
A comparison of MISiC Schottky-diode hydrogen sensors made by NO, N 2O, or NH 3 nitridations Journal:IEEE Transactions on Electron Devices	Tang, WM Lai, PT Leung, CH Xu, JP	2006	80
Correlation between hot-carrier-induced interface states and GIDL current increase in N-MOSFET's Journal:IEEE Transactions on Electron Devices	Lai, PT Xu, JP Wong, WM Lo, HB Cheng, YC	1998	189
Effective passivation of HfO2/Ge interface by using nitrided germanate as passivation interlayer Journal:physica status solidi (a)	Cheng, ZX Xu, JP Liu, L Huang, Y Lai, PT Tang, WM	2017	33
Effects of annealing gas on electrical properties and reliability of Ge MOS capacitors with HfTiON as gate dielectric Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007	Li, CX Lai, PT Xu, JP Zou, X	2007	95
Effects of annealing on electrical performance of multilayer MoS2 transistors with atomic layer deposited HfO2 gate dielectric Journal:Applied Physics Express	Wen, M Xu, JP Liu, L Lai, PT Tang, WM	2016	23
Effects of annealing temperature and gas on pentacene OTFTs with HfLaO as gate dielectric Journal:IEEE Transactions on Device and Materials Reliability	Deng, LF Liu, YR Choi, HW Xu, JP Che, CM Lai, PT	2012	86
Effects of chlorine on interfacial properties and reliability of SiO 2 grown on 6H-SiC Journal:Applied Physics A: Materials Science and Processing	Xu, JP Lai, PT Wu, HP Chan, CL	2005	105
Effects of different annealing gases on pentacene OTFT with HfLaO gate dielectric Proceeding/Conference:IEEE Electron Device Letters	Deng, LF Lai, PT Chen, WB Xu, JP Liu, YR Choi, HW Che, CM	2011	109
Effects of gate-insulator nitridation gas on MISiC Schottky-diode hydrogen sensors Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC	Tang, WM Leung, CH Lai, PT Xu, JP	2006	84
Effects of trapped charges in gate dielectric and high- k encapsulation on performance of MoS2 transistor Journal:IEEE Transactions on Electron Devices	XU, JP XIE, WX LIU, L ZHAO, X SONG, X Lai, PT TANG, WM	2019	6
Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal-oxide-semiconductor capacitor Journal:Physica Status Solidi - Rapid Research Letters	Liu, LN Choi, HW Xu, JP Lai, PT	2016	60
Electrical and Interfacial Properties of GaAs MOS Capacitors With La-Doped ZrON as Interfacial Passivation Layer Journal:IEEE Transactions on Electron Devices	Lu, HH Xu, JP Liu, L Lai, PT Tang, WM	2017	50
Electrical characteristics of Al-doped ZnO-channel thin-film transistor with high-κ HfON/SiO 2 stack gate dielectric Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010	Zou, X Xu, JP Lai, PT Li, Y Ji, F Deng, LF	2010	92
Electrical properties of different NO-annealed oxynitrides Proceeding/Conference:Journal of Non-Crystalline Solids	Xu, JP Lai, PT Cheng, YC	1999	103
Electrical properties of HfTiO gate-dielectric metal oxide semiconductor capacitors with NO and N 2O surface nitridations Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010	Ji, F Xu, JP Li, CX Lai, PT Deng, LF Zou, X	2010	69
Electricalperformance of multilayer MoS2 transistor with ALD HfTiO gate dielectric Proceeding/Conference:IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)	Wen, M Xu, JP Liu, L Huang, Y Lai, PT Tang, WM	2016	41
Enhanced hydrogen-sensing characteristics of MISiC Schottky-diode hydrogen sensor by trichloroethylene oxidation Journal:Sensors and Actuators, A: Physical	Tang, WM Lai, PT Xu, JP Chan, CL	2005	808

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