Browsing by Author Xu, JP

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TitleAuthor(s)Issue DateViews
 
2014
49
Comparative study of high-K HfLaON and HfON as charge-storage layer of MONOS memory
Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
2010
45
 
2006
84
 
1998
95
 
2017
2
Effects of annealing gas on electrical properties and reliability of Ge MOS capacitors with HfTiON as gate dielectric
Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
2007
52
 
Effects of annealing temperature and gas on pentacene OTFTs with HfLaO as gate dielectric
Journal:IEEE Transactions on Device and Materials Reliability
2012
83
 
Effects of chlorine on interfacial properties and reliability of SiO 2 grown on 6H-SiC
Journal:Applied Physics A: Materials Science and Processing
2005
66
 
2011
101
Effects of gate-insulator nitridation gas on MISiC Schottky-diode hydrogen sensors
Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
2006
60
 
2016
24
 
2017
3
Electrical characteristics of Al-doped ZnO-channel thin-film transistor with high-κ HfON/SiO 2 stack gate dielectric
Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
2010
90
 
Electrical properties of different NO-annealed oxynitrides
Proceeding/Conference:Journal of Non-Crystalline Solids
1999
66
Electrical properties of HfTiO gate-dielectric metal oxide semiconductor capacitors with NO and N 2O surface nitridations
Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
2010
45
 
Electricalperformance of multilayer MoS2 transistor with ALD HfTiO gate dielectric
Proceeding/Conference:IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
2016
5
 
2005
96
 
2008
70
Gate leakage properties of MOS devices with TriLayer high-k gate dielectric
Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
2006
74
 
2017
5