Browsing by Author Xu, JP

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TitleAuthor(s)Issue DateViews
 
Artificial Topological Superconductor by the Proximity Effect
Journal:Physical Review Letters
Xu, JPLiu, CHWang, MXGe, JFLiu, ZLYang, XJChen, YLiu, YXu, ZAGao, CLQian, DZhang, FJia, JF
2014
56
 
Comparative study of high-K HfLaON and HfON as charge-storage layer of MONOS memory
Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Liu, LXu, JPHuang, XDJi, FLai, PT
2010
42
 
A comparison of MISiC Schottky-diode hydrogen sensors made by NO, N 2O, or NH 3 nitridations
Journal:IEEE Transactions on Electron Devices
Tang, WMLai, PTLeung, CHXu, JP
2006
56
 
Correlation between hot-carrier-induced interface states and GIDL current increase in N-MOSFET's
Journal:IEEE Transactions on Electron Devices
Lai, PTXu, JPWong, WMLo, HBCheng, YC
1998
99
 
Effective passivation of HfO2/Ge interface by using nitrided germanate as passivation interlayer
Journal:physica status solidi (a)
Cheng, ZXXu, JPLiu, LHuang, YLai, PTTang, WM
2017
11
 
Effects of annealing gas on electrical properties and reliability of Ge MOS capacitors with HfTiON as gate dielectric
Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Li, CXLai, PTXu, JPZou, X
2007
56
 
Effects of annealing on electrical performance of multilayer MoS2 transistors with atomic layer deposited HfO2 gate dielectric
Journal:Applied Physics Express
Wen, MXu, JPLiu, LLai, PTTang, WM
2016
6
 
Effects of annealing temperature and gas on pentacene OTFTs with HfLaO as gate dielectric
Journal:IEEE Transactions on Device and Materials Reliability
Deng, LFLiu, YRChoi, HWXu, JPChe, CMLai, PT
2012
61
 
Effects of chlorine on interfacial properties and reliability of SiO 2 grown on 6H-SiC
Journal:Applied Physics A: Materials Science and Processing
Xu, JPLai, PTWu, HPChan, CL
2005
54
 
Effects of different annealing gases on pentacene OTFT with HfLaO gate dielectric
Proceeding/Conference:IEEE Electron Device Letters
Deng, LFLai, PTChen, WBXu, JPLiu, YRChoi, HWChe, CM
2011
84
 
Effects of gate-insulator nitridation gas on MISiC Schottky-diode hydrogen sensors
Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Tang, WMLeung, CHLai, PTXu, JP
2006
57
 
Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal-oxide-semiconductor capacitor
Journal:Physica Status Solidi - Rapid Research Letters
Liu, LNChoi, HWXu, JPLai, PT
2016
32
 
Electrical and Interfacial Properties of GaAs MOS Capacitors With La-Doped ZrON as Interfacial Passivation Layer
Journal:IEEE Transactions on Electron Devices
Lu, HHXu, JPLiu, LLai, PTTang, WM
2017
20
 
Electrical characteristics of Al-doped ZnO-channel thin-film transistor with high-κ HfON/SiO 2 stack gate dielectric
Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Zou, XXu, JPLai, PTLi, YJi, FDeng, LF
2010
78
 
Electrical properties of different NO-annealed oxynitrides
Proceeding/Conference:Journal of Non-Crystalline Solids
Xu, JPLai, PTCheng, YC
1999
70
 
Electrical properties of HfTiO gate-dielectric metal oxide semiconductor capacitors with NO and N 2O surface nitridations
Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Ji, FXu, JPLi, CXLai, PTDeng, LFZou, X
2010
40
 
Electricalperformance of multilayer MoS2 transistor with ALD HfTiO gate dielectric
Proceeding/Conference:IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
Wen, MXu, JPLiu, LHuang, YLai, PTTang, WM
2016
16
 
Enhanced hydrogen-sensing characteristics of MISiC Schottky-diode hydrogen sensor by trichloroethylene oxidation
Journal:Sensors and Actuators, A: Physical
Tang, WMLai, PTXu, JPChan, CL
2005
115
 
A fringing-capacitance model for deep-submicron MOSFET with high-k gate dielectric
Journal:Microelectronics Reliability
Ji, FXu, JPLai, PTGuan, JG
2008
57
 
GaAs Metal–Oxide–Semiconductor Capacitor With Nd-Based High-k Oxynitrides as Gate Dielectric and Passivation Layer
Journal:IEEE Transactions on Electron Devices
LIU, LChoi, HWXu, JPTang, WMLai, PT
2018
5
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