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Conference Paper: Electricalperformance of multilayer MoS2 transistor with ALD HfTiO gate dielectric

TitleElectricalperformance of multilayer MoS2 transistor with ALD HfTiO gate dielectric
Authors
Issue Date2016
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853
Citation
Proceedings of the 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, China, 3-5 August 2016, p. 17-20 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/247822

 

DC FieldValueLanguage
dc.contributor.authorWen, M-
dc.contributor.authorXu, JP-
dc.contributor.authorLiu, L-
dc.contributor.authorHuang, Y-
dc.contributor.authorLai, PT-
dc.contributor.authorTang, WM-
dc.date.accessioned2017-10-18T08:33:12Z-
dc.date.available2017-10-18T08:33:12Z-
dc.date.issued2016-
dc.identifier.citationProceedings of the 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, China, 3-5 August 2016, p. 17-20-
dc.identifier.urihttp://hdl.handle.net/10722/247822-
dc.languageeng-
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853-
dc.relation.ispartofIEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)-
dc.rightsIEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). Copyright © IEEE.-
dc.rights©2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.titleElectricalperformance of multilayer MoS2 transistor with ALD HfTiO gate dielectric-
dc.typeConference_Paper-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/EDSSC.2016.7785200-
dc.identifier.hkuros280933-
dc.identifier.spage17-
dc.identifier.epage20-
dc.publisher.placeUnited States-

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