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Conference Paper: Effects of different annealing gases on pentacene OTFT with HfLaO gate dielectric

TitleEffects of different annealing gases on pentacene OTFT with HfLaO gate dielectric
Authors
Keywords1/f noise
Dielectric
high-κ
organic thin-film transistor (OTFT)
Issue Date2011
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Citation
Ieee Electron Device Letters, 2011, v. 32 n. 1, p. 93-95 How to Cite?
AbstractPentacene organic thin-film transistors (OTFTs) with HfLaO high-kappa gate dielectric were fabricated. The dielectric was prepared by a sputtering method and then annealed in N2,NH3,O2, or NO at 400°C. The carrier mobility of the NH3-annealed OTFT could reach 0.59 cm2/V̇s, which is higher than those of the other three devices. Moreover, the NH3-annealed OTFT obtained the smallest subthreshold swing of 0.26 V/dec among them. Furthermore,1/f noise measurement indicated that the NH3-annealed OTFT achieved the smallest 1/f noise. All these should be attributed to the improved interface between the gate dielectric and the organic semiconductor associated with the passivation effects of the NH3 annealing on the dielectric surface. © 2010 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/158672
ISSN
2015 Impact Factor: 2.528
2015 SCImago Journal Rankings: 1.791
ISI Accession Number ID
Funding AgencyGrant Number
RGC of Hong KongHKU 7133/07E
URC
University of Hong Kong00600009
Funding Information:

This work was supported in part by the RGC of Hong Kong under Project HKU 7133/07E, by the URC for Seed Fund for Strategic Research Theme of HKU on Molecular Materials, and by the University Development Fund (Nanotechnology Research Institute) of The University of Hong Kong under Grant 00600009. The review of this letter was arranged by Editor C.-P. Chang.

References

 

DC FieldValueLanguage
dc.contributor.authorDeng, LFen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorChen, WBen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLiu, YRen_HK
dc.contributor.authorChoi, HWen_HK
dc.contributor.authorChe, CMen_HK
dc.date.accessioned2012-08-08T09:00:47Z-
dc.date.available2012-08-08T09:00:47Z-
dc.date.issued2011en_HK
dc.identifier.citationIeee Electron Device Letters, 2011, v. 32 n. 1, p. 93-95en_US
dc.identifier.issn0741-3106en_HK
dc.identifier.urihttp://hdl.handle.net/10722/158672-
dc.description.abstractPentacene organic thin-film transistors (OTFTs) with HfLaO high-kappa gate dielectric were fabricated. The dielectric was prepared by a sputtering method and then annealed in N2,NH3,O2, or NO at 400°C. The carrier mobility of the NH3-annealed OTFT could reach 0.59 cm2/V̇s, which is higher than those of the other three devices. Moreover, the NH3-annealed OTFT obtained the smallest subthreshold swing of 0.26 V/dec among them. Furthermore,1/f noise measurement indicated that the NH3-annealed OTFT achieved the smallest 1/f noise. All these should be attributed to the improved interface between the gate dielectric and the organic semiconductor associated with the passivation effects of the NH3 annealing on the dielectric surface. © 2010 IEEE.en_HK
dc.languageengen_US
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55en_HK
dc.relation.ispartofIEEE Electron Device Lettersen_HK
dc.rightsIEEE Electron Device Letters. Copyright © IEEE.-
dc.rights©2011 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subject1/f noiseen_HK
dc.subjectDielectricen_HK
dc.subjecthigh-κen_HK
dc.subjectorganic thin-film transistor (OTFT)en_HK
dc.titleEffects of different annealing gases on pentacene OTFT with HfLaO gate dielectricen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.emailChe, CM:cmche@hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.identifier.authorityChe, CM=rp00670en_HK
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1109/LED.2010.2087314en_HK
dc.identifier.scopuseid_2-s2.0-78650856491en_HK
dc.identifier.hkuros183731-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-78650856491&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume32en_HK
dc.identifier.issue1en_HK
dc.identifier.spage93en_HK
dc.identifier.epage95en_HK
dc.identifier.isiWOS:000285844400031-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridDeng, LF=25936092200en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridChen, WB=23982219600en_HK
dc.identifier.scopusauthoridXu, JP=35754128700en_HK
dc.identifier.scopusauthoridLiu, YR=36062331200en_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK
dc.identifier.scopusauthoridChe, CM=7102442791en_HK

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