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Conference Paper: Electrical properties of different NO-annealed oxynitrides

TitleElectrical properties of different NO-annealed oxynitrides
Authors
Issue Date1999
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jnoncrysol
Citation
The 2nd International Conference on Amorphous and Crystalline Insulating Thin Films II, Hong Kong, China, 12-14 October 1998. In Journal of Non-Crystalline Solids, 1999, v. 254 n. 1-3, p. 94-98 How to Cite?
AbstractPerformances of gate dielectrics prepared by double-nitridation in NO and N2O are investigated. Stronger oxide/Si interface bonding, less charge trapping and larger charge-to-breakdown are observed for such gate dielectrics than singly NO-nitrided gate dielectric. The physical mechanisms behind the findings are attributed to larger nitrogen peak concentration located almost at the oxide/Si interface and total nitrogen content near the oxide/Si interface of these gate dielectrics.
DescriptionThis journal issues contain proceedings of the 2nd International Conference on Amorphous and Crystalline Insulating Thin Films II ... 1998
Persistent Identifierhttp://hdl.handle.net/10722/73996
ISSN
2015 Impact Factor: 1.825
2015 SCImago Journal Rankings: 0.695
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2010-09-06T06:56:47Z-
dc.date.available2010-09-06T06:56:47Z-
dc.date.issued1999en_HK
dc.identifier.citationThe 2nd International Conference on Amorphous and Crystalline Insulating Thin Films II, Hong Kong, China, 12-14 October 1998. In Journal of Non-Crystalline Solids, 1999, v. 254 n. 1-3, p. 94-98en_HK
dc.identifier.issn0022-3093en_HK
dc.identifier.urihttp://hdl.handle.net/10722/73996-
dc.descriptionThis journal issues contain proceedings of the 2nd International Conference on Amorphous and Crystalline Insulating Thin Films II ... 1998-
dc.description.abstractPerformances of gate dielectrics prepared by double-nitridation in NO and N2O are investigated. Stronger oxide/Si interface bonding, less charge trapping and larger charge-to-breakdown are observed for such gate dielectrics than singly NO-nitrided gate dielectric. The physical mechanisms behind the findings are attributed to larger nitrogen peak concentration located almost at the oxide/Si interface and total nitrogen content near the oxide/Si interface of these gate dielectrics.en_HK
dc.languageengen_HK
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jnoncrysolen_HK
dc.relation.ispartofJournal of Non-Crystalline Solidsen_HK
dc.rightsNOTICE: this is the author’s version of a work that was accepted for publication in Journal of Non-Crystalline Solids. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Journal of Non-Crystalline Solids, 1999, v. 254 n. 1-3, p. 94-98. DOI: 10.1016/S0022-3093(99)00435-4-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleElectrical properties of different NO-annealed oxynitridesen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0022-3093&volume=254&spage=94&epage=98&date=1999&atitle=Electrical+Properties+of+Different+NO-Annealed+Oxynitridesen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepostprint-
dc.identifier.doi10.1016/S0022-3093(99)00435-4en_HK
dc.identifier.scopuseid_2-s2.0-0032685557en_HK
dc.identifier.hkuros44812en_HK
dc.identifier.hkuros54496-
dc.identifier.hkuros240645-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032685557&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume254en_HK
dc.identifier.issue1-3en_HK
dc.identifier.spage94en_HK
dc.identifier.epage98en_HK
dc.identifier.isiWOS:000082513900013-
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridCheng, YC=27167728600en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.customcontrol.immutablesml 141117-

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