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Article: Effects of chlorine on interfacial properties and reliability of SiO 2 grown on 6H-SiC

TitleEffects of chlorine on interfacial properties and reliability of SiO 2 grown on 6H-SiC
Authors
Issue Date2005
PublisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Citation
Applied Physics A: Materials Science And Processing, 2005, v. 81 n. 1, p. 173-176 How to Cite?
AbstractA new process of oxidizing 6H-SiC in dry O2+trichloroethylene (TCE) is used to incorporate chlorine in SiO2. The interface quality and the reliability of 6H-SiC MOS capacitors with gate dielectrics prepared by the process are examined. As compared to the conventional dry O2 oxidation, the O2+TCE oxidation results in lower interface-state density, reduced oxide-charge density and enhanced reliability. This could be attributed to the passivation effects of Cl2 and HCl on the structural defects at/near the SiC/SiO2 interface, and also their gettering effects on ion contamination. Moreover, post-oxidation NO annealing, especially in a wet ambient, can further decrease the interface-state density and the oxide-charge density. Lastly, an increased oxidation rate induced by TCE is observed and should be useful for reducing the normally high thermal budget of oxide growth. All these are very attractive for fabricating SiC MOSFETs with high inversion-channel mobility and high hot-carrier reliability. © Springer-Verlag 2005.
Persistent Identifierhttp://hdl.handle.net/10722/155264
ISSN
2015 Impact Factor: 1.444
2015 SCImago Journal Rankings: 0.535
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXu, JPen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorWu, HPen_US
dc.contributor.authorChan, CLen_US
dc.date.accessioned2012-08-08T08:32:36Z-
dc.date.available2012-08-08T08:32:36Z-
dc.date.issued2005en_US
dc.identifier.citationApplied Physics A: Materials Science And Processing, 2005, v. 81 n. 1, p. 173-176en_US
dc.identifier.issn0947-8396en_US
dc.identifier.urihttp://hdl.handle.net/10722/155264-
dc.description.abstractA new process of oxidizing 6H-SiC in dry O2+trichloroethylene (TCE) is used to incorporate chlorine in SiO2. The interface quality and the reliability of 6H-SiC MOS capacitors with gate dielectrics prepared by the process are examined. As compared to the conventional dry O2 oxidation, the O2+TCE oxidation results in lower interface-state density, reduced oxide-charge density and enhanced reliability. This could be attributed to the passivation effects of Cl2 and HCl on the structural defects at/near the SiC/SiO2 interface, and also their gettering effects on ion contamination. Moreover, post-oxidation NO annealing, especially in a wet ambient, can further decrease the interface-state density and the oxide-charge density. Lastly, an increased oxidation rate induced by TCE is observed and should be useful for reducing the normally high thermal budget of oxide growth. All these are very attractive for fabricating SiC MOSFETs with high inversion-channel mobility and high hot-carrier reliability. © Springer-Verlag 2005.en_US
dc.languageengen_US
dc.publisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htmen_US
dc.relation.ispartofApplied Physics A: Materials Science and Processingen_US
dc.titleEffects of chlorine on interfacial properties and reliability of SiO 2 grown on 6H-SiCen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1007/s00339-004-2882-9en_US
dc.identifier.scopuseid_2-s2.0-18244400418en_US
dc.identifier.hkuros103232-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-18244400418&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume81en_US
dc.identifier.issue1en_US
dc.identifier.spage173en_US
dc.identifier.epage176en_US
dc.identifier.isiWOS:000228794000030-
dc.publisher.placeGermanyen_US
dc.identifier.scopusauthoridXu, JP=22952417000en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridWu, HP=7405582418en_US
dc.identifier.scopusauthoridChan, CL=8507083700en_US

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