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Article: Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal-oxide-semiconductor capacitor

TitleEffects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal-oxide-semiconductor capacitor
Authors
Issue Date2016
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6270
Citation
Physica Status Solidi - Rapid Research Letters, 2016, v. 10 n. 9, p. 703-707 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/231908
ISSN
2015 Impact Factor: 2.578
2015 SCImago Journal Rankings: 1.243

 

DC FieldValueLanguage
dc.contributor.authorLiu, L-
dc.contributor.authorChoi, HW-
dc.contributor.authorXu, JP-
dc.contributor.authorLai, PT-
dc.date.accessioned2016-09-20T05:26:18Z-
dc.date.available2016-09-20T05:26:18Z-
dc.date.issued2016-
dc.identifier.citationPhysica Status Solidi - Rapid Research Letters, 2016, v. 10 n. 9, p. 703-707-
dc.identifier.issn1862-6254-
dc.identifier.urihttp://hdl.handle.net/10722/231908-
dc.languageeng-
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6270-
dc.relation.ispartofPhysica Status Solidi - Rapid Research Letters-
dc.titleEffects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal-oxide-semiconductor capacitor-
dc.typeArticle-
dc.identifier.emailChoi, HW: hwchoi@hku.hk-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityChoi, HW=rp00108-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1002/pssr.201600227-
dc.identifier.hkuros263479-
dc.identifier.volume10-
dc.identifier.issue9-
dc.identifier.spage703-
dc.identifier.epage707-
dc.publisher.placeGermany-

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