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Article: A comparison of MISiC Schottky-diode hydrogen sensors made by NO, N 2O, or NH 3 nitridations

TitleA comparison of MISiC Schottky-diode hydrogen sensors made by NO, N 2O, or NH 3 nitridations
Authors
KeywordsHydrogen Sensors
Nitridation
Silicon Carbide
Issue Date2006
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
IEEE Transactions on Electron Devices, 2006, v. 53 n. 9, p. 2378-2383 How to Cite?
AbstractMISiC Schottky-diode hydrogen sensors with gate insulator grown in three different nitridation gases (nitric oxide (NO), N 2O, and NH 3) are fabricated. Steady-state and transien-t-response measurements are carried out at different temperatures and hydrogen concentrations using a computer-controlled measurement system. Experimental results show that these nitrided sensors have high sensitivity and can give a rapid and stable response over a wide range of temperature. This paper also finds that N 2O provides the fastest insulator growth with good insulator quality and hence the highest sensitivity among the three nitrided samples. The N 2O- nitrided sensor can give a significant response even at a low H 2 concentration of 48-ppm H 2 in N 2, indicating a potential application for detecting hydrogen leakage at high temperature. Moreover, the three nitrided samples respond faster than the control sample. At 300°C, the response times of the N 2O, NO, and NH 3-nitrided sample to the 48-ppm H 2 in N 2 are 11, 11, and 37 s, respectively, as compared to 65 s for the control sample without the gate insulator. © 2006 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/155357
ISSN
2015 Impact Factor: 2.207
2015 SCImago Journal Rankings: 1.436
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorTang, WMen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorLeung, CHen_US
dc.contributor.authorXu, JPen_US
dc.date.accessioned2012-08-08T08:33:03Z-
dc.date.available2012-08-08T08:33:03Z-
dc.date.issued2006en_US
dc.identifier.citationIEEE Transactions on Electron Devices, 2006, v. 53 n. 9, p. 2378-2383en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://hdl.handle.net/10722/155357-
dc.description.abstractMISiC Schottky-diode hydrogen sensors with gate insulator grown in three different nitridation gases (nitric oxide (NO), N 2O, and NH 3) are fabricated. Steady-state and transien-t-response measurements are carried out at different temperatures and hydrogen concentrations using a computer-controlled measurement system. Experimental results show that these nitrided sensors have high sensitivity and can give a rapid and stable response over a wide range of temperature. This paper also finds that N 2O provides the fastest insulator growth with good insulator quality and hence the highest sensitivity among the three nitrided samples. The N 2O- nitrided sensor can give a significant response even at a low H 2 concentration of 48-ppm H 2 in N 2, indicating a potential application for detecting hydrogen leakage at high temperature. Moreover, the three nitrided samples respond faster than the control sample. At 300°C, the response times of the N 2O, NO, and NH 3-nitrided sample to the 48-ppm H 2 in N 2 are 11, 11, and 37 s, respectively, as compared to 65 s for the control sample without the gate insulator. © 2006 IEEE.en_US
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_US
dc.relation.ispartofIEEE Transactions on Electron Devicesen_US
dc.rightsIEEE Transactions on Electron Devices. Copyright © IEEE-
dc.rights©2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectHydrogen Sensorsen_US
dc.subjectNitridationen_US
dc.subjectSilicon Carbideen_US
dc.titleA comparison of MISiC Schottky-diode hydrogen sensors made by NO, N 2O, or NH 3 nitridationsen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.emailLeung, CH:chleung@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.identifier.authorityLeung, CH=rp00146en_US
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1109/TED.2006.879676en_US
dc.identifier.scopuseid_2-s2.0-33947155761en_US
dc.identifier.hkuros135367-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33947155761&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume53en_US
dc.identifier.issue9en_US
dc.identifier.spage2378en_US
dc.identifier.epage2383en_US
dc.identifier.isiWOS:000240076500050-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridTang, WM=24438163600en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridLeung, CH=7402612415en_US
dc.identifier.scopusauthoridXu, JP=35754128700en_US

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