File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Effects of annealing on electrical performance of multilayer MoS2 transistors with atomic layer deposited HfO2 gate dielectric

TitleEffects of annealing on electrical performance of multilayer MoS2 transistors with atomic layer deposited HfO2 gate dielectric
Authors
Issue Date2016
PublisherIOP Publishing, published in association with Japan Society of Applied Physics. The Journal's web site is located at http://iopscience.iop.org/1882-0786/
Citation
Applied Physics Express, 2016, v. 9, p. 095202 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/261758
ISSN
2017 Impact Factor: 2.555
2015 SCImago Journal Rankings: 0.766

 

DC FieldValueLanguage
dc.contributor.authorWen, M-
dc.contributor.authorXu, JP-
dc.contributor.authorLiu, L-
dc.contributor.authorLai, PT-
dc.contributor.authorTang, WM-
dc.date.accessioned2018-09-28T04:47:20Z-
dc.date.available2018-09-28T04:47:20Z-
dc.date.issued2016-
dc.identifier.citationApplied Physics Express, 2016, v. 9, p. 095202-
dc.identifier.issn1882-0778-
dc.identifier.urihttp://hdl.handle.net/10722/261758-
dc.languageeng-
dc.publisherIOP Publishing, published in association with Japan Society of Applied Physics. The Journal's web site is located at http://iopscience.iop.org/1882-0786/-
dc.relation.ispartofApplied Physics Express-
dc.rightsApplied Physics Express. Copyright © IOP Publishing, published in association with Japan Society of Applied Physics.-
dc.rightsThis is an author-created, un-copyedited version of an article published in [insert name of journal]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/[insert DOI].-
dc.titleEffects of annealing on electrical performance of multilayer MoS2 transistors with atomic layer deposited HfO2 gate dielectric-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.7567/APEX.9.095202-
dc.identifier.hkuros292220-
dc.identifier.volume9-
dc.identifier.spage095202-
dc.identifier.epage095202-
dc.publisher.placeUnited Kingdom-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats