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Article: Effects of annealing temperature and gas on pentacene OTFTs with HfLaO as gate dielectric

TitleEffects of annealing temperature and gas on pentacene OTFTs with HfLaO as gate dielectric
Authors
KeywordsDielectric
Hflao
High Κ
Organic Thin-Film Transistor (OTFT)
Issue Date2012
PublisherIEEE
IEEE Transactions on Device and Materials Reliability. Copyright © IEEE
Citation
IEEE Transactions on Device and Materials Reliability, 2012, v. 12 n. 1, p. 107-112 How to Cite?
AbstractPentacene organic thin-film transistors (OTFTs) with high-κ HfLaO as gate insulator were fabricated. HfLaO film was prepared by sputtering method. To improve the film quality, the dielectric was annealed in N 2, NH 3, or O 2 at two temperatures, i.e., 200 °C and 400 °C, respectively. The I-V characteristics of the OTFTs and C-V characteristics of corresponding organic capacitors were measured. The OTFTs could operate at a low operating voltage of below 5 V, and the dielectric constant of the HfLaO film could be above ten. For all the annealing gases, the OTFTs annealed at 400 °C achieved higher carrier mobility than their counterparts annealed at 200 °C (with the one annealed in NH 3 at 400 °C showing the highest carrier mobility of 0.45 cm 2/ V·s), which could be supported by SEM images which indicate that pentacene tended to form larger grains on HfLaO annealed at 400 °C than on that annealed at 200 °C. The C-V measurement of the organic capacitors indicated that the localized charge density in the organic semiconductor/oxide was lower for the 400 °C annealing than for the 200 °C annealing. Furthermore, through the characterization of gate current leakage, HfLaO film annealed at 400 °C achieved much smaller leakage than that annealed at 200 °C. Since the maximum processing temperature of ITO glass substrates is around 400 °C , this study shows that 400 °C is suitable for the annealing of HfLaO film in high-performance OTFTs on glass substrate. © 2011 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/155741
ISSN
2015 Impact Factor: 1.437
2015 SCImago Journal Rankings: 0.826
ISI Accession Number ID
Funding AgencyGrant Number
RGC of HKSAR, ChinaHKU 7133/07E
URC of HKU on Molecular Materials
Nanotechnology Research Institute of The University of Hong Kong00600009
National Natural Science Foundation of China61076113
Funding Information:

This work was supported in part by the RGC of HKSAR, China, under Project HKU 7133/07E, by the URC for Seed Fund for Strategic Research Theme of HKU on Molecular Materials, by the University Development Fund (Nanotechnology Research Institute) of The University of Hong Kong under Grant 00600009, and by the National Natural Science Foundation of China under Project 61076113.

References

 

DC FieldValueLanguage
dc.contributor.authorDeng, LFen_US
dc.contributor.authorLiu, YRen_US
dc.contributor.authorChoi, HWen_US
dc.contributor.authorXu, JPen_US
dc.contributor.authorChe, CMen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2012-08-08T08:35:07Z-
dc.date.available2012-08-08T08:35:07Z-
dc.date.issued2012en_US
dc.identifier.citationIEEE Transactions on Device and Materials Reliability, 2012, v. 12 n. 1, p. 107-112en_US
dc.identifier.issn1530-4388en_US
dc.identifier.urihttp://hdl.handle.net/10722/155741-
dc.description.abstractPentacene organic thin-film transistors (OTFTs) with high-κ HfLaO as gate insulator were fabricated. HfLaO film was prepared by sputtering method. To improve the film quality, the dielectric was annealed in N 2, NH 3, or O 2 at two temperatures, i.e., 200 °C and 400 °C, respectively. The I-V characteristics of the OTFTs and C-V characteristics of corresponding organic capacitors were measured. The OTFTs could operate at a low operating voltage of below 5 V, and the dielectric constant of the HfLaO film could be above ten. For all the annealing gases, the OTFTs annealed at 400 °C achieved higher carrier mobility than their counterparts annealed at 200 °C (with the one annealed in NH 3 at 400 °C showing the highest carrier mobility of 0.45 cm 2/ V·s), which could be supported by SEM images which indicate that pentacene tended to form larger grains on HfLaO annealed at 400 °C than on that annealed at 200 °C. The C-V measurement of the organic capacitors indicated that the localized charge density in the organic semiconductor/oxide was lower for the 400 °C annealing than for the 200 °C annealing. Furthermore, through the characterization of gate current leakage, HfLaO film annealed at 400 °C achieved much smaller leakage than that annealed at 200 °C. Since the maximum processing temperature of ITO glass substrates is around 400 °C , this study shows that 400 °C is suitable for the annealing of HfLaO film in high-performance OTFTs on glass substrate. © 2011 IEEE.en_US
dc.languageengen_US
dc.publisherIEEE-
dc.publisherIEEE Transactions on Device and Materials Reliability. Copyright © IEEE-
dc.relation.ispartofIEEE Transactions on Device and Materials Reliabilityen_US
dc.rights©2012 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectDielectricen_US
dc.subjectHflaoen_US
dc.subjectHigh Κen_US
dc.subjectOrganic Thin-Film Transistor (OTFT)en_US
dc.titleEffects of annealing temperature and gas on pentacene OTFTs with HfLaO as gate dielectricen_US
dc.typeArticleen_US
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_US
dc.identifier.emailChe, CM:cmche@hku.hken_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.identifier.authorityChe, CM=rp00670en_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1109/TDMR.2011.2169797en_US
dc.identifier.scopuseid_2-s2.0-84863268762-
dc.identifier.hkuros204840-
dc.identifier.hkuros225735-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84858127614&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume12en_US
dc.identifier.issue1en_US
dc.identifier.spage107en_US
dc.identifier.epage112en_US
dc.identifier.isiWOS:000301236700016-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridDeng, LF=25936092200en_US
dc.identifier.scopusauthoridLiu, YR=55082693900en_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US
dc.identifier.scopusauthoridXu, JP=55082362400en_US
dc.identifier.scopusauthoridChe, CM=7102442791en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.customcontrol.immutablejt 130319-

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