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Conference Paper: Electrical properties of HfTiO gate-dielectric metal oxide semiconductor capacitors with NO and N 2O surface nitridations

TitleElectrical properties of HfTiO gate-dielectric metal oxide semiconductor capacitors with NO and N 2O surface nitridations
Authors
Ji, FXu, JPLi, CXLai, PTDeng, LFZou, X
KeywordsHftio
Mos
Sion
Surface Nitridation
Issue Date2010
Citation
2010 Ieee International Conference Of Electron Devices And Solid-State Circuits, Edssc 2010, 2010 How to Cite?
DOI: http://dx.doi.org/10.1109/EDSSC.2010.5713759
AbstractIn this paper, Si-MOS capacitors with HfTiO/SiON stack gate dielectric were fabricated by using Si-surface thermal passivation in NO and N 2O ambients respectively and reactive co-sputtering technology. Results show that the sample pretreated in NO ambient has excellent interface properties, low gate leakage current density and high reliability. This is attributed to the formation of a SiON interlayer with suitable proportion of N and O, and N-barrier role of isolating Ti in HfTiO from Si of the substrate, thus effectively preventing the inter-diffusions of Ti and Si during post-deposition annealing. © 2010 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/158698
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorJi, Fen_US
dc.contributor.authorXu, JPen_US
dc.contributor.authorLi, CXen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorDeng, LFen_US
dc.contributor.authorZou, Xen_US
dc.date.accessioned2012-08-08T09:00:54Z-
dc.date.available2012-08-08T09:00:54Z-
dc.date.issued2010en_US
dc.identifier.citation2010 Ieee International Conference Of Electron Devices And Solid-State Circuits, Edssc 2010, 2010en_US
dc.identifier.urihttp://hdl.handle.net/10722/158698-
dc.description.abstractIn this paper, Si-MOS capacitors with HfTiO/SiON stack gate dielectric were fabricated by using Si-surface thermal passivation in NO and N 2O ambients respectively and reactive co-sputtering technology. Results show that the sample pretreated in NO ambient has excellent interface properties, low gate leakage current density and high reliability. This is attributed to the formation of a SiON interlayer with suitable proportion of N and O, and N-barrier role of isolating Ti in HfTiO from Si of the substrate, thus effectively preventing the inter-diffusions of Ti and Si during post-deposition annealing. © 2010 IEEE.en_US
dc.languageengen_US
dc.relation.ispartof2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010en_US
dc.subjectHftioen_US
dc.subjectMosen_US
dc.subjectSionen_US
dc.subjectSurface Nitridationen_US
dc.titleElectrical properties of HfTiO gate-dielectric metal oxide semiconductor capacitors with NO and N 2O surface nitridationsen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/EDSSC.2010.5713759en_US
dc.identifier.scopuseid_2-s2.0-79952530641en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79952530641&selection=ref&src=s&origin=recordpageen_US
dc.identifier.scopusauthoridJi, F=8238553900en_US
dc.identifier.scopusauthoridXu, JP=35754128700en_US
dc.identifier.scopusauthoridLi, CX=13906721600en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridDeng, LF=25936092200en_US
dc.identifier.scopusauthoridZou, X=23020170400en_US

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