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Article: Enhanced hydrogen-sensing characteristics of MISiC Schottky-diode hydrogen sensor by trichloroethylene oxidation

TitleEnhanced hydrogen-sensing characteristics of MISiC Schottky-diode hydrogen sensor by trichloroethylene oxidation
Authors
KeywordsHydrogen sensors
NO
Silicon carbide
Trichloroethylene
Issue Date2005
PublisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/sna
Citation
Sensors And Actuators, A: Physical, 2005, v. 119 n. 1, p. 63-67 How to Cite?
AbstractA novel metal-insulator-SiC (MISiC) Schottky-diode hydrogen sensor with the interfacial insulator layer grown in oxygen and trichloroethylene (TCE) is fabricated. The sensitivity and response speed of the device are investigated at different temperatures and hydrogen concentrations. The sensor can quickly respond to hydrogen variation and can give significant response even at a low hydrogen concentration of 48 ppm e.g., a sensitivity of 82% is achieved at 150 °C and 1 V. As compared to another sensor with the insulator grown in NO gas and the control without the insulator, the proposed sensor displays higher sensitivity and faster response. These improvements can be related to the effects of TCE on the quality and growth rate of the insulator layer. © 2004 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/73783
ISSN
2015 Impact Factor: 2.201
2015 SCImago Journal Rankings: 0.902
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorTang, WMen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorChan, CLen_HK
dc.date.accessioned2010-09-06T06:54:43Z-
dc.date.available2010-09-06T06:54:43Z-
dc.date.issued2005en_HK
dc.identifier.citationSensors And Actuators, A: Physical, 2005, v. 119 n. 1, p. 63-67en_HK
dc.identifier.issn0924-4247en_HK
dc.identifier.urihttp://hdl.handle.net/10722/73783-
dc.description.abstractA novel metal-insulator-SiC (MISiC) Schottky-diode hydrogen sensor with the interfacial insulator layer grown in oxygen and trichloroethylene (TCE) is fabricated. The sensitivity and response speed of the device are investigated at different temperatures and hydrogen concentrations. The sensor can quickly respond to hydrogen variation and can give significant response even at a low hydrogen concentration of 48 ppm e.g., a sensitivity of 82% is achieved at 150 °C and 1 V. As compared to another sensor with the insulator grown in NO gas and the control without the insulator, the proposed sensor displays higher sensitivity and faster response. These improvements can be related to the effects of TCE on the quality and growth rate of the insulator layer. © 2004 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/snaen_HK
dc.relation.ispartofSensors and Actuators, A: Physicalen_HK
dc.subjectHydrogen sensorsen_HK
dc.subjectNOen_HK
dc.subjectSilicon carbideen_HK
dc.subjectTrichloroethyleneen_HK
dc.titleEnhanced hydrogen-sensing characteristics of MISiC Schottky-diode hydrogen sensor by trichloroethylene oxidationen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0924-4247&volume=119&spage=63&epage=67&date=2005&atitle=Enhanced+Hydrogen-Sensing+Characteristics+of+MISiC+Schottky-Diode+Hydrogen+Sensor+by+Trichloroethylene+Oxidationen_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.sna.2004.08.032en_HK
dc.identifier.scopuseid_2-s2.0-17244367639en_HK
dc.identifier.hkuros103249en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-17244367639&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume119en_HK
dc.identifier.issue1en_HK
dc.identifier.spage63en_HK
dc.identifier.epage67en_HK
dc.identifier.isiWOS:000228309600008-
dc.publisher.placeSwitzerlanden_HK
dc.identifier.scopusauthoridTang, WM=24438163600en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridXu, JP=7408556215en_HK
dc.identifier.scopusauthoridChan, CL=8507083700en_HK

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