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TypeTitleAuthor(s)YearViews
Acute phase circulating micoRNAs predict tumor recurrence and survivals of hepatocellular carcinoma patients after liver transplantation
Proceedings/Conference:
Liver Transplantation
Publisher:
John Wiley & Sons, Inc. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jtoc/106570021
Ng, KTP; Man, K; Wong, N; Li, CX; Chan, SC; Lo, CM2012174
 
A garlic derivative, s-allylcysteine (sac), suppresses proliferation and metastasis of hepatocellular carcinoma
Journal:
PLoS ONE
Publisher:
Public Library of Science. The Journal's web site is located at http://www.plosone.org/home.action
Ng, KTP; Guo, DY; Cheng, Q; Geng, W; Ling, CC; Li, CX; Liu, XB; Ma, YY; Lo, CM; Poon, RTP; Fan, ST; Man, K2012258
 
Novel Mechanism for Tissue Repair of Human Induced Pluripotent Stem Cells Derived Mesenchymal Stem Cells during Liver Regeneration
Proceedings/Conference:
Liver Transplantation
Ma, YY; Li, CX; Law, B; Lian, QZ; Man, K; Lo, CM2012187
 
Acute phase liver graft injury mobilizes regulating B cells after LDLT for HCC patients through TLR4/CXCL10/CXCR3 signaling
Proceedings/Conference:
Liver Transplantation
Publisher:
John Wiley & Sons, Inc. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jtoc/106570021
Man, K; Shao, Y; Li, CX; Ling, CC; Geng, W; Ma, YY; Ng, TP; Fan, ST; Lo, CM2012180
 
FTY720 suppresses liver tumor metastasis by reducing the population of circulating endothelial progenitor cells
Journal:
PLoS ONE
Publisher:
Public Library of Science. The Journal's web site is located at http://www.plosone.org/home.action
Li, CX; Shao, Y; Ng, KTP; Liu, XB; Ling, CC; Ma, YY; Geng, W; Fan, ST; Lo, CM; Man, K2012218
 
Improved interfacial properties of Ge MOS capacitor with high-k dielectric by using TaON/GeON dual interlayer
Journal:
IEEE Electron Device Letters
Publisher:
I E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Ji, F; Xu, JP; Lai, PT; Li, CX; Liu, JG2011133
 
Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayer
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Ji, F; Xu, JP; Liu, JG; Li, CX; Lai, PT2011120
 
Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates
Proceedings/Conference:
Sensors and Actuators A: Physical
Publisher:
Elsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/sna
Yu, J; Chen, G; Li, CX; Shafiei, M; Ou, JZ; Du Plessis, J; Kalantar-Zadeh, K; Lai, PT; Wlodarski, W2011282
 
Electrical properties of Ge metal-oxide-semiconductor capacitors with La 2O 3 gate dielectric annealed in different ambient
Journal:
Thin Solid Films
Publisher:
Elsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Xu, HX; Xu, JP; Li, CX; Lai, PT2010114
 
Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high- k HfO 2 gate dielectric by using La 2 O 3 interlayer sputtered with/without N 2 ambient
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Xu, HX; Xu, JP; Li, CX; Lai, PT2010117
 
Electrical properties of HfTiO gate-dielectric metal oxide semiconductor capacitors with NO and N 2O surface nitridations
Proceedings/Conference:
2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
Ji, F; Xu, JP; Li, CX; Lai, PT; Deng, LF; Zou, X2010186
 
Effects of fluorine incorporation on the properties of Ge p-MOS capacitors with HfTiON dielectric
Journal:
Solid-State Electronics
Publisher:
Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Li, CX; Leung, CH; Lai, PT; Xu, JP2010165
 
Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high-κ LaTiON gate dielectric
Journal:
Applied Physics A: Materials Science and Processing
Publisher:
Springer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Xu, HX; Xu, JP; Li, CX; Chan, CL; Lai, PT2010238
 
Hydrogen gas sensing properties of Pt/Ta 2O 5 Schottky diodes based on Si and SiC substrates
Proceedings/Conference:
Procedia Engineering
Yu, J; Chen, G; Li, CX; Shafiei, M; Ou, J; Du Plessis, J; Kalantar-Zadeh, K; Lai, PT; Wlodarski, W2010191
 
Comparative study of HfTa-based gate-dielectric Ge metal-oxide- semiconductor capacitors with and without AlON interlayer
Journal:
Applied Physics A: Materials Science and Processing
Publisher:
Springer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Xu, JP; Zhang, XF; Li, CX; Chan, CL; Lai, PT2010323
 
Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness
Journal:
Thin Solid Films
Publisher:
Elsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Xu, JP; Zou, X; Lai, PT; Li, CX; Chan, CL2009130
 
Optimization of N content for higk-k LaTiON gate dielectric of Ge MOS capacitor
Proceedings/Conference:
2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Publisher:
IEEE.
Xu, HX; Xu, JP; Li, CX; Liu, L; Lai, PT; Chan, CL2009364
 
A compact threshold-voltage model of MOSFETs with stack high-k gate dielectric
Proceedings/Conference:
2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Publisher:
IEEE.
Ji, F; Xu, JP; Chen, JJ; Xu, HX; Li, CX; Lai, PT2009370
 
Impacts of Ti content and annealing temperature on electrical properties of Si MOS capacitors with HfTiON gate dielectric
Proceedings/Conference:
2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Publisher:
IEEE.
Ji, F; Xu, JP; Li, CX; Lai, PT; Chan, CL2009361
 
Improved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet-NO Ge-surface pretreatment
Journal:
Applied Physics A: Materials Science and Processing
Publisher:
Springer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Xu, JP; Zou, X; Li, CX; Lai, PT; Chan, CL2009129
 
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