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TypeTitleAuthor(s)YearViews
FTY720 suppresses liver tumor metastasis by reducing the population of circulating endothelial progenitor cellsLi, CX; Shao, Y; Ng, KTP; Liu, XB; Ling, CC; Ma, YY; Geng, W; Fan, ST; Lo, CM; Man, K2012140
 
Acute phase circulating micoRNAs predict tumor recurrence and survivals of hepatocellular carcinoma patients after liver transplantationNg, KTP; Man, K; Wong, N; Li, CX; Chan, SC; Lo, CM201278
 
A garlic derivative, s-allylcysteine (sac), suppresses proliferation and metastasis of hepatocellular carcinomaNg, KTP; Guo, DY; Cheng, Q; Geng, W; Ling, CC; Li, CX; Liu, XB; Ma, YY; Lo, CM; Poon, RTP; Fan, ST; Man, K2012179
 
Novel Mechanism for Tissue Repair of Human Induced Pluripotent Stem Cells Derived Mesenchymal Stem Cells during Liver RegenerationMa, YY; Li, CX; Law, B; Lian, Q; Man, K; Lo, CM2012107
 
Acute phase liver graft injury mobilizes regulating B cells after LDLT for HCC patients through TLR4/CXCL10/CXCR3 signalingMan, K; Shao, Y; Li, CX; Ling, CC; Geng, W; Ma, YY; Ng, TP; Fan, ST; Lo, CM201296
 
Improved interfacial properties of Ge MOS capacitor with high-k dielectric by using TaON/GeON dual interlayerJi, F; Xu, JP; Lai, PT; Li, CX; Liu, JG201193
 
Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayerJi, F; Xu, JP; Liu, JG; Li, CX; Lai, PT201174
 
Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substratesYu, J; Chen, G; Li, CX; Shafiei, M; Ou, JZ; Du Plessis, J; Kalantar-Zadeh, K; Lai, PT; Wlodarski, W2011186
 
Electrical properties of Ge metal-oxide-semiconductor capacitors with La 2O 3 gate dielectric annealed in different ambientXu, HX; Xu, JP; Li, CX; Lai, PT201074
 
Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high- k HfO 2 gate dielectric by using La 2 O 3 interlayer sputtered with/without N 2 ambientXu, HX; Xu, JP; Li, CX; Lai, PT201078
 
Electrical properties of HfTiO gate-dielectric metal oxide semiconductor capacitors with NO and N 2O surface nitridationsJi, F; Xu, JP; Li, CX; Lai, PT; Deng, LF; Zou, X2010111
 
Effects of fluorine incorporation on the properties of Ge p-MOS capacitors with HfTiON dielectricLi, CX; Leung, CH; Lai, PT; Xu, JP201097
 
Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high-κ LaTiON gate dielectricXu, HX; Xu, JP; Li, CX; Chan, CL; Lai, PT2010173
 
Hydrogen gas sensing properties of Pt/Ta 2O 5 Schottky diodes based on Si and SiC substratesYu, J; Chen, G; Li, CX; Shafiei, M; Ou, J; Du Plessis, J; Kalantar-Zadeh, K; Lai, PT; Wlodarski, W2010140
 
Comparative study of HfTa-based gate-dielectric Ge metal-oxide- semiconductor capacitors with and without AlON interlayerXu, JP; Zhang, XF; Li, CX; Chan, CL; Lai, PT2010240
 
Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thicknessXu, JP; Zou, X; Lai, PT; Li, CX; Chan, CL200989
 
Effects of sputtering and annealing temperatures on MOS capacitor with HfTiON gate dielectricWang, CD; Li, CX; Leung, CH; Lai, PT2009184
 
Optimization of N content for higk-k LaTiON gate dielectric of Ge MOS capacitorXu, HX; Xu, JP; Li, CX; Liu, L; Lai, PT; Chan, CL2009332
 
A compact threshold-voltage model of MOSFETs with stack high-k gate dielectricJi, F; Xu, JP; Chen, JJ; Xu, HX; Li, CX; Lai, PT2009299
 
Impacts of Ti content and annealing temperature on electrical properties of Si MOS capacitors with HfTiON gate dielectricJi, F; Xu, JP; Li, CX; Lai, PT; Chan, CL2009300
 
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