| Title | Author(s) | Year | View Count |
 | FTY720 suppresses liver tumor metastasis by reducing the population of circulating endothelial progenitor cells | Li, CX; Shao, Y; Ng, KTP; Liu, XB; Ling, CC; Ma, YY; Geng, W; Fan, ST; Lo, CM; Man, K | 2012 | 96 |
 | Novel Mechanism for Tissue Repair of Human Induced Pluripotent Stem Cells Derived Mesenchymal Stem Cells during Liver Regeneration | Ma, YY; Li, CX; Law, B; Lian, Q; Man, K; Lo, CM | 2012 | 85 |
| A garlic derivative, s-allylcysteine (sac), suppresses proliferation and metastasis of hepatocellular carcinoma | Ng, KTP; Guo, DY; Cheng, Q; Geng, W; Ling, CC; Li, CX; Liu, XB; Ma, YY; Lo, CM; Poon, RTP; Fan, ST; Man, K | 2012 | 99 |
 | Improved interfacial properties of Ge MOS capacitor with high-k dielectric by using TaON/GeON dual interlayer | Ji, F; Xu, JP; Lai, PT; Li, CX; Liu, JG | 2011 | 81 |
| Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayer | Ji, F; Xu, JP; Liu, JG; Li, CX; Lai, PT | 2011 | 61 |
| Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates | Yu, J; Chen, G; Li, CX; Shafiei, M; Ou, JZ; Du Plessis, J; Kalantar-Zadeh, K; Lai, PT; Wlodarski, W | 2011 | 130 |
| Effects of fluorine incorporation on the properties of Ge p-MOS capacitors with HfTiON dielectric | Li, CX; Leung, CH; Lai, PT; Xu, JP | 2010 | 61 |
| Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high-κ LaTiON gate dielectric | Xu, HX; Xu, JP; Li, CX; Chan, CL; Lai, PT | 2010 | 140 |
| Comparative study of HfTa-based gate-dielectric Ge metal-oxide- semiconductor capacitors with and without AlON interlayer | Xu, JP; Zhang, XF; Li, CX; Chan, CL; Lai, PT | 2010 | 228 |
| Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high- k HfO 2 gate dielectric by using La 2 O 3 interlayer sputtered with/without N 2 ambient | Xu, HX; Xu, JP; Li, CX; Lai, PT | 2010 | 67 |
| Electrical properties of Ge metal-oxide-semiconductor capacitors with La 2O 3 gate dielectric annealed in different ambient | Xu, HX; Xu, JP; Li, CX; Lai, PT | 2010 | 68 |
| Hydrogen gas sensing properties of Pt/Ta 2O 5 Schottky diodes based on Si and SiC substrates | Yu, J; Chen, G; Li, CX; Shafiei, M; Ou, J; Du Plessis, J; KalantarZadeh, K; Lai, PT; Wlodarski, W | 2010 | 101 |
| Electrical properties of HfTiO gate-dielectric metal oxide semiconductor capacitors with NO and N 2O surface nitridations | Ji, F; Xu, JP; Li, CX; Lai, PT; Deng, LF; Zou, X | 2010 | 89 |
| A compact threshold-voltage model of MOSFETs with stack high-k gate dielectric | Ji, F; Xu, JP; Chen, JJ; Xu, HX; Li, CX; Lai, PT | 2009 | 195 |
| Effects of sputtering and annealing temperatures on MOS capacitor with HfTiON gate dielectric | Wang, CD; Li, CX; Leung, CH; Lai, PT | 2009 | 168 |
| Optimization of N content for higk-k LaTiON gate dielectric of Ge MOS capacitor | Xu, HX; Xu, JP; Li, CX; Liu, L; Lai, PT; Chan, CL | 2009 | 203 |
| Effects of annealing gas species on the electrical properties and reliability of Ge MOS capacitors with high-k Y 2O 3 gate dielectric | Li, CX; Xu, HX; Xu, JP; Lai, PT | 2009 | 242 |
| Impacts of Ti content and annealing temperature on electrical properties of Si MOS capacitors with HfTiON gate dielectric | Ji, F; Xu, JP; Li, CX; Lai, PT; Chan, CL | 2009 | 181 |
| Wide-bandgap high- k Y2 O3 as passivating interlayer for enhancing the electrical properties and high-field reliability of n-Ge metal-oxide-semiconductor capacitors with high- k HfTiO gate dielectric | Li, CX; Lai, PT | 2009 | 207 |
| A study on fluorine incorporation in Ge p-MOS capacitors with HfTiON dielectric | Li, CX; Wang, CD; Leung, CH; Lai, PT; Xu, JP | 2009 | 72 |
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