Browsing by Author Li, CX

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TitleAuthor(s)Issue DateViews
2012
317
2012
333
 
2014
21
 
A compact threshold-voltage model of MOSFETs with stack high-k gate dielectric
Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
2009
402
 
2010
389
 
2007
189
Effects of annealing gas on electrical properties and reliability of Ge MOS capacitors with HfTiON as gate dielectric
Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
2007
164
 
Effects of annealing gas species on the electrical properties and reliability of Ge MOS capacitors with high-k Y 2O 3 gate dielectric
Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
2009
349
 
2010
209
Effects of post deposited Annealing on Ge MOS capacitors with sub-nanometer EOT HfTiO gate dielectric
Proceeding/Conference:3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS
2008
132
 
Effects of sputtering and annealing temperatures on MOS capacitor with HfTiON gate dielectric
Proceeding/Conference:Proceedings of the IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2009
2009
289
 
2008
157
 
2010
180
Electrical properties of HfTiO gate-dielectric metal oxide semiconductor capacitors with NO and N 2O surface nitridations
Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
2010
240
 
2007
543
 
Enhanced performance of Si MOS capacitors with HfTaOxNy gate dielectric by using AlOxNy or TaOxNy interlayer
Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits Proceedings
2008
254
 
2004
152
 
2012
294
 
2012
317
Gate-leakage model of Ge MOS capacitor with high-k gate dielectric
Proceeding/Conference:ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
2007
194