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TypeTitleAuthor(s)YearViews
Positron annihilation study of defects in electron-irradiated single crystal zinc oxide
Proceedings/Conference:
Journal of Physics: Conference Series
Publisher:
Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/EJ/journal/conf
To, CK; Yang, B; Beling, CD; Fung, S; Ling, CC; Gong, M2011263
 
Isochronal annealing study of low energy electron irradiated Al-doped p -type 6H silicon carbide with deep level transient spectroscopy
Journal:
Journal of Applied Physics
Publisher:
American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Luo, JM; Zhong, ZQ; Gong, M; Fung, S; Ling, CC2009638
 
Synthesis and luminescent properties of GdSrAl3O7:Tb3+ phosphor under VUV/UV excitation
Journal:
Journal of Alloys and Compounds
Publisher:
Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jallcom
Zhou, L; Choy, WCH; Shi, J; Gong, M; Liang, H2008130
 
Deep level transient spectroscopic study of electron irradiated p-type 6H-SiC
Proceedings/Conference:
光信息材料议
Zhong, ZQ; Gong, M; Chen, X; Ling, FCC; Fung, SHY; Beling, CD2006276
 
Primary photoluminescence in as-neutron (electron) -irradiated n-type 6H-SiC
Journal:
Journal of Applied Physics
Publisher:
American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Zhong, ZQ; Wu, DX; Gong, M; Wang, O; Shi, SL; Xu, SJ; Chen, XD; Ling, CC; Fung, S; Beling, CD; Brauer, G; Anwand, W; Skorupa, W2006266
 
Electron energy dependence on inducing the photoluminescence lines of 6H-SiC by electron irradiation
Proceedings/Conference:
Physica B: Condensed Matter
Publisher:
Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/physb
Ling, CC; Chen, XD; Gong, M; Yang, CL; Ge, WK; Wang, JN2006216
 
Fast example-based surface texture synthesis via discrete optimization
Journal:
Visual Computer
Publisher:
Springer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00371/index.htm
Han, J; Zhou, K; Wei, LY; Gong, M; Bao, H; Zhang, X; Guo, B2006158
 
Photoluminescence of electron-and neutron-irradiated n-type 6H-SiC
Journal:
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Zhong, Z; Gong, M; Wang, O; Yu, Z; Yang, Z; Xu, S; Chen, X; Ling, C; Fung, H; Beling, CD2006112
 
A novel green emitting phosphor Ca1.5Y1.5Al3.5Si1.5O12:Tb3+
Journal:
Materials Chemistry and Physics
Publisher:
Elsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/matchemphys
Zhou, L; Choy, WCH; Shi, J; Gong, M; Liang, H2006118
 
Origin of triangular island shape and double-step bunching during GaN growth by molecular-beam epitaxy under excess Ga conditions
Journal:
Physical Review B - Condensed Matter and Materials Physics
Publisher:
American Physical Society. The Journal's web site is located at http://prb.aps.org/
Xie, MH; Gong, M; Pang, EKY; Wu, HS; Tong, SY2006194
 
Deep level defects in 6H silicon carbide induced by particles irradiations
Proceedings/Conference:
15th National Conference of Semiconductor Physics, Chengdu, China, Oct 16-19, 2005
Ling, FCC; Chen, X; Gong, M; Ge, WK; Wang, JN; Yang, CL; Brauer, G; Anwand, W; Skorupa, W; Beling, CD; Fung, SHY; Wang, HY; Weng, HM2005217
 
Photoluminescence of electron/neutron-irradiated n-type 6H-SiC
Proceedings/Conference:
National Conference of Semiconductor Physics, Chengdu, China, Oct 16-19, 2005
Zhong, ZQ; Wu, DX; Gong, M; Wang, O; Xu, SJ; Chen, X; Ling, FCC; Fung, SHY; Beling, CD2005233
 
Deep level defects E1/E2 in n-type 6H silicon carbide induced by electron radiation and He-implantation
Proceedings/Conference:
AIP Conference Proceedings
Publisher:
American Institute of Physics. The Journal's web site is located at http://proceedings.aip.org/
Ling, CC; Chen, XD; Fung, S; Beling, CD; Brauer, G; Anwand, W; Skorupa, W; Gong, M2005650
 
Anomalous behaviors of E1 E2 deep level defects in 6H silicon carbide
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Chen, XD; Ling, CC; Gong, M; Fung, S; Beling, CD; Brauer, G; Anwand, W; Skorupa, W2005595
 
Synthesis, vacuum ultraviolet and near ultraviolet-excited luminescent properties of GdCaAl3O7: RE3+ (RE=Eu, Tb)
Journal:
Journal of Solid State Chemistry
Publisher:
Academic Press. The Journal's web site is located at http://www.elsevier.com/locate/jssc
Zhou, L; Choy, WCH; Shi, J; Gong, M; Liang, H; Yuk, TI2005541
 
Raman scattering and X-ray diffraction study of neutron irradiated GaN epilayers
Proceedings/Conference:
Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Publisher:
IEEE.
Wang, RX; Xu, SJ; Li, S; Fung, S; Beling, CD; Wang, K; Wei, ZF; Zhou, TJ; Zhang, JD; Gong, M; Pang, GKH2005581
 
Film thickness degradation of Au/GaN Schottky contact characteristics
Journal:
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Publisher:
Elsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/mseb
Wang, K; Wang, RX; Fung, S; Beling, CD; Chen, XD; Huang, Y; Li, S; Xu, SJ; Gong, M2005179
 
Micro-Raman and photoluminescence studies of neutron-irradiated gallium nitride epilayers
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Wang, RX; Xu, SJ; Fung, S; Beling, CD; Wang, K; Li, S; Wei, ZF; Zhou, TJ; Zhang, JD; Huang, Y; Gong, M2005715
 
Deep level defects in 6H silicon carbide
Journal:
物理
Publisher:
中国科学院物理研究所. The Journal's web site is located at http://wl.periodicals.net.cn/default.html
Ling, CC; Chen, XD; Fung, SHY; Beling, CD; Gong, M; Ge, WK; Wang, JN; Brauer, G; Anwand, W; Skorupa, W2004164
 
Deep level transient spectroscopy study of particle irradiation induced defects in n-6H-SiC (Abstract)
Publisher:
American Physical Society. The Journal's web site is located at http://www.aps.org/memb/guide/prbook-baps.cfm
Chen, XD; Gong, M; Fung, SHY; Beling, CD; Ling, FCC2004373
 
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