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TypeTitleAuthor(s)YearViews
Positron annihilation study of defects in electron-irradiated single crystal zinc oxideTo, CK; Yang, B; Beling, CD; Fung, S; Ling, CC; Gong, M2011209
 
Isochronal annealing study of low energy electron irradiated Al-doped p -type 6H silicon carbide with deep level transient spectroscopyLuo, JM; Zhong, ZQ; Gong, M; Fung, S; Ling, CC2009598
 
Synthesis and luminescent properties of GdSrAl3O7:Tb3+ phosphor under VUV/UV excitationZhou, L; Choy, WCH; Shi, J; Gong, M; Liang, H200885
 
Photoluminescence of electron-and neutron-irradiated n-type 6H-SiCZhong, Z; Gong, M; Wang, O; Yu, Z; Yang, Z; Xu, S; Chen, X; Ling, C; Fung, H; Beling, CD200662
 
Origin of triangular island shape and double-step bunching during GaN growth by molecular-beam epitaxy under excess Ga conditionsXie, MH; Gong, M; Pang, EKY; Wu, HS; Tong, SY2006152
 
Deep level transient spectroscopic study of electron irradiated p-type 6H-SiCZhong, ZQ; Gong, M; Chen, X; Ling, FCC; Fung, SHY; Beling, CD2006233
 
A novel green emitting phosphor Ca1.5Y1.5Al3.5Si1.5O12:Tb3+Zhou, L; Choy, WCH; Shi, J; Gong, M; Liang, H200664
 
Electron energy dependence on inducing the photoluminescence lines of 6H-SiC by electron irradiationLing, CC; Chen, XD; Gong, M; Yang, CL; Ge, WK; Wang, JN2006178
 
Primary photoluminescence in as-neutron (electron) -irradiated n-type 6H-SiCZhong, ZQ; Wu, DX; Gong, M; Wang, O; Shi, SL; Xu, SJ; Chen, XD; Ling, CC; Fung, S; Beling, CD; Brauer, G; Anwand, W; Skorupa, W2006215
 
Fast example-based surface texture synthesis via discrete optimizationHan, J; Zhou, K; Wei, LY; Gong, M; Bao, H; Zhang, X; Guo, B200698
 
Film thickness degradation of Au/GaN Schottky contact characteristicsWang, K; Wang, RX; Fung, S; Beling, CD; Chen, XD; Huang, Y; Li, S; Xu, SJ; Gong, M2005132
 
Micro-Raman and photoluminescence studies of neutron-irradiated gallium nitride epilayersWang, RX; Xu, SJ; Fung, S; Beling, CD; Wang, K; Li, S; Wei, ZF; Zhou, TJ; Zhang, JD; Huang, Y; Gong, M2005657
 
Anomalous behaviors of E1 E2 deep level defects in 6H silicon carbideChen, XD; Ling, CC; Gong, M; Fung, S; Beling, CD; Brauer, G; Anwand, W; Skorupa, W2005527
 
Photoluminescence of electron/neutron-irradiated n-type 6H-SiCZhong, ZQ; Wu, DX; Gong, M; Wang, O; Xu, SJ; Chen, X; Ling, FCC; Fung, SHY; Beling, CD2005184
 
Synthesis, vacuum ultraviolet and near ultraviolet-excited luminescent properties of GdCaAl3O7: RE3+ (RE=Eu, Tb)Zhou, L; Choy, WCH; Shi, J; Gong, M; Liang, H; Yuk, TI2005482
 
Raman scattering and X-ray diffraction study of neutron irradiated GaN epilayersWang, RX; Xu, SJ; Li, S; Fung, S; Beling, CD; Wang, K; Wei, ZF; Zhou, TJ; Zhang, JD; Gong, M; Pang, GKH2005526
 
Deep level defects in 6H silicon carbide induced by particles irradiationsLing, FCC; Chen, X; Gong, M; Ge, WK; Wang, JN; Yang, CL; Brauer, G; Anwand, W; Skorupa, W; Beling, CD; Fung, SHY; Wang, HY; Weng, HM2005171
 
Deep level defects E1/E2 in n-type 6H silicon carbide induced by electron radiation and He-implantationLing, CC; Chen, XD; Fung, S; Beling, CD; Brauer, G; Anwand, W; Skorupa, W; Gong, M2005590
 
Electron irradiated liquid encapsulated Czochralski grown undoped gallium antimonide studied by positron lifetime spectroscopy and photoluminescenceMa, SK; Lui, MK; Ling, CC; Fung, S; Beling, CD; Li, KF; Cheah, KW; Gong, M; Hang, HS; Weng, HM2004138
 
Identities of the deep level defects E 1/E 2 in 6H silicon carbideLing, CC; Chen, XD; Gong, M; Weng, HM; Hang, DS; Beling, CD; Fung, S; Lam, TW; Lam, CH200477
 
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