| Title | Author(s) | Year | View Count |
 | Positron annihilation study of defects in electron-irradiated single crystal zinc oxide | To, CK; Yang, B; Beling, CD; Fung, S; Ling, CC; Gong, M | 2011 | 206 |
| Isochronal annealing study of low energy electron irradiated Al-doped p -type 6H silicon carbide with deep level transient spectroscopy | Luo, JM; Zhong, ZQ; Gong, M; Fung, S; Ling, CC | 2009 | 588 |
| Synthesis and luminescent properties of GdSrAl3O7:Tb3+ phosphor under VUV/UV excitation | Zhou, L; Choy, WCH; Shi, J; Gong, M; Liang, H | 2008 | 68 |
 | Primary photoluminescence in as-neutron (electron) -irradiated n-type 6H-SiC | Zhong, ZQ; Wu, DX; Gong, M; Wang, O; Shi, SL; Xu, SJ; Chen, XD; Ling, CC; Fung, S; Beling, CD; Brauer, G; Anwand, W; Skorupa, W | 2006 | 177 |
| Origin of triangular island shape and double-step bunching during GaN growth by molecular-beam epitaxy under excess Ga conditions | Xie, MH; Gong, M; Pang, EKY; Wu, HS; Tong, SY | 2006 | 152 |
| Electron energy dependence on inducing the photoluminescence lines of 6H-SiC by electron irradiation | Ling, CC; Chen, XD; Gong, M; Yang, CL; Ge, WK; Wang, JN | 2006 | 194 |
 | Deep level transient spectroscopic study of electron irradiated p-type 6H-SiC | Zhong, ZQ; Gong, M; Chen, X; Ling, FCC; Fung, SHY; Beling, CD | 2006 | 240 |
| A novel green emitting phosphor Ca1.5Y1.5Al3.5Si1.5O12:Tb3+ | Zhou, L; Choy, WCH; Shi, J; Gong, M; Liang, H | 2006 | 49 |
| Fast example-based surface texture synthesis via discrete optimization | Han, J; Zhou, K; Wei, LY; Gong, M; Bao, H; Zhang, X; Guo, B | 2006 | 111 |
| Photoluminescence of electron-and neutron-irradiated n-type 6H-SiC | Zhong, Z; Gong, M; Wang, O; Yu, Z; Yang, Z; Xu, S; Chen, X; Ling, C; Fung, H; Beling, CD | 2006 | 39 |
| Film thickness degradation of Au/GaN Schottky contact characteristics | Wang, K; Wang, RX; Fung, S; Beling, CD; Chen, XD; Huang, Y; Li, S; Xu, SJ; Gong, M | 2005 | 120 |
| Deep level defects E1/E2 in n-type 6H silicon carbide induced by electron radiation and He-implantation | Ling, CC; Chen, XD; Fung, S; Beling, CD; Brauer, G; Anwand, W; Skorupa, W; Gong, M | 2005 | 612 |
| Synthesis, vacuum ultraviolet and near ultraviolet-excited luminescent properties of GdCaAl3O7: RE3+ (RE=Eu, Tb) | Zhou, L; Choy, WCH; Shi, J; Gong, M; Liang, H; Yuk, TI | 2005 | 476 |
| Micro-Raman and photoluminescence studies of neutron-irradiated gallium nitride epilayers | Wang, RX; Xu, SJ; Fung, S; Beling, CD; Wang, K; Li, S; Wei, ZF; Zhou, TJ; Zhang, JD; Huang, Y; Gong, M | 2005 | 693 |
| Deep level defects in 6H silicon carbide induced by particles irradiations | Ling, FCC; Chen, X; Gong, M; Ge, WK; Wang, JN; Yang, CL; Brauer, G; Anwand, W; Skorupa, W; Beling, CD; Fung, SHY; Wang, HY; Weng, HM | 2005 | 189 |
| Photoluminescence of electron/neutron-irradiated n-type 6H-SiC | Zhong, ZQ; Wu, DX; Gong, M; Wang, O; Xu, SJ; Chen, X; Ling, FCC; Fung, SHY; Beling, CD | 2005 | 196 |
| Raman scattering and X-ray diffraction study of neutron irradiated GaN epilayers | Wang, RX; Xu, SJ; Li, S; Fung, S; Beling, CD; Wang, K; Wei, ZF; Zhou, TJ; Zhang, JD; Gong, M; Pang, GKH | 2005 | 551 |
| Anomalous behaviors of E1 E2 deep level defects in 6H silicon carbide | Chen, XD; Ling, CC; Gong, M; Fung, S; Beling, CD; Brauer, G; Anwand, W; Skorupa, W | 2005 | 518 |
| Positron- electron autocorrelation function study of e-center in phosphorus-doped silicon | Ho, KF; Beling, CD; Fung, S; Biasini, M; Ferra, G; Gong, M | 2004 | 123 |
| Electron irradiated liquid encapsulated Czochralski grown undoped gallium antimonide studied by positron lifetime spectroscopy and photoluminescence | Ma, SK; Lui, MK; Ling, CC; Fung, S; Beling, CD; Li, KF; Cheah, KW; Gong, M; Hang, HS; Weng, HM | 2004 | 152 |
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