Article: Compensation ratio-dependent concentration of a V InH 4 complex in n-type liquid encapsulated Czochralski InP

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TitleCompensation ratio-dependent concentration of a V InH 4 complex in n-type liquid encapsulated Czochralski InP
AuthorsFung, S1
Zhao, YW1
Beling, CD1
Xu, XL1
Gong, M1
Sun, NF3
Sun, TN3
Chen, XD3
Zhang, RG3
Liu, SL3
Yang, GY3
Qian, JJ2
Sun, MF2
Liu, XL2
KeywordsPhysics engineering
Issue Date1998
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
CitationApplied Physics Letters, 1998, v. 73 n. 9, p. 1275-1277 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.122270
AbstractThe concentration of hydrogen-indium vacancy complex V InH 4 in liquid encapsulated Czochralski undoped and Fe-doped n-type InP has been studied by low-temperature infrared absorption spectroscopy. The V InH 4 complex is found to be a dominant intrinsic shallow donor defect with concentrations up to ∼10 16 cm -3 in as-grown liquid encapsulated Czochralski InP. The concentration of the V InH 4 complex is found to increase with the compensation ratio in good agreement with the proposed defect formation model of Walukiewicz [W. Walukiewicz, Phys. Rev. B 37, 4760 (1998); Appl. Phys. Lett. 54, 2094 (1989)], which predicts a Fermi-level-dependent concentration of amphoteric defects. © 1998 American Institute of Physics.
ISSN0003-6951
2011 Impact Factor: 3.844
2011 SCImago Journal Rankings: 0.398
DOIhttp://dx.doi.org/10.1063/1.122270
ISI Accession Number IDWOS:000083351600037
ReferencesReferences in Scopus
DC Field
Value
dc.contributor.authorFung, S
dc.contributor.authorZhao, YW
dc.contributor.authorBeling, CD
dc.contributor.authorXu, XL
dc.contributor.authorGong, M
dc.contributor.authorSun, NF
dc.contributor.authorSun, TN
dc.contributor.authorChen, XD
dc.contributor.authorZhang, RG
dc.contributor.authorLiu, SL
dc.contributor.authorYang, GY
dc.contributor.authorQian, JJ
dc.contributor.authorSun, MF
dc.contributor.authorLiu, XL
dc.date.accessioned2007-01-08T02:31:16Z
dc.date.available2007-01-08T02:31:16Z
dc.date.issued1998
dc.description.abstractThe concentration of hydrogen-indium vacancy complex V InH 4 in liquid encapsulated Czochralski undoped and Fe-doped n-type InP has been studied by low-temperature infrared absorption spectroscopy. The V InH 4 complex is found to be a dominant intrinsic shallow donor defect with concentrations up to ∼10 16 cm -3 in as-grown liquid encapsulated Czochralski InP. The concentration of the V InH 4 complex is found to increase with the compensation ratio in good agreement with the proposed defect formation model of Walukiewicz [W. Walukiewicz, Phys. Rev. B 37, 4760 (1998); Appl. Phys. Lett. 54, 2094 (1989)], which predicts a Fermi-level-dependent concentration of amphoteric defects. © 1998 American Institute of Physics.
dc.description.naturepublished_or_final_version
dc.format.extent50164 bytes
dc.format.extent9781 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.identifier.citationApplied Physics Letters, 1998, v. 73 n. 9, p. 1275-1277 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.122270
dc.identifier.doihttp://dx.doi.org/10.1063/1.122270
dc.identifier.epage1277
dc.identifier.hkuros38916
dc.identifier.isiWOS:000083351600037
dc.identifier.issn0003-6951
2011 Impact Factor: 3.844
2011 SCImago Journal Rankings: 0.398
dc.identifier.issue9
dc.identifier.openurl
dc.identifier.scopuseid_2-s2.0-0000710775
dc.identifier.spage1275
dc.identifier.urihttp://hdl.handle.net/10722/42188
dc.identifier.volume73
dc.languageeng
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
dc.publisher.placeUnited States
dc.relation.ispartofApplied Physics Letters
dc.relation.referencesReferences in Scopus
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
dc.subjectPhysics engineering
dc.titleCompensation ratio-dependent concentration of a V InH 4 complex in n-type liquid encapsulated Czochralski InP
dc.typeArticle
Author Affiliations
  1. The University of Hong Kong
  2. Institute of Semiconductors Chinese Academy of Sciences
  3. Hebei Semiconductor Research Institute