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Article: Compensation ratio-dependent concentration of a V InH 4 complex in n-type liquid encapsulated Czochralski InP
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TitleCompensation ratio-dependent concentration of a V InH 4 complex in n-type liquid encapsulated Czochralski InP
 
AuthorsFung, S1
Zhao, YW1
Beling, CD1
Xu, XL1
Gong, M1
Sun, NF3
Sun, TN3
Chen, XD3
Zhang, RG3
Liu, SL3
Yang, GY3
Qian, JJ2
Sun, MF2
Liu, XL2
 
KeywordsPhysics engineering
 
Issue Date1998
 
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
 
CitationApplied Physics Letters, 1998, v. 73 n. 9, p. 1275-1277 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.122270
 
AbstractThe concentration of hydrogen-indium vacancy complex V InH 4 in liquid encapsulated Czochralski undoped and Fe-doped n-type InP has been studied by low-temperature infrared absorption spectroscopy. The V InH 4 complex is found to be a dominant intrinsic shallow donor defect with concentrations up to ∼10 16 cm -3 in as-grown liquid encapsulated Czochralski InP. The concentration of the V InH 4 complex is found to increase with the compensation ratio in good agreement with the proposed defect formation model of Walukiewicz [W. Walukiewicz, Phys. Rev. B 37, 4760 (1998); Appl. Phys. Lett. 54, 2094 (1989)], which predicts a Fermi-level-dependent concentration of amphoteric defects. © 1998 American Institute of Physics.
 
ISSN0003-6951
2013 Impact Factor: 3.515
 
DOIhttp://dx.doi.org/10.1063/1.122270
 
ISI Accession Number IDWOS:000083351600037
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorFung, S
 
dc.contributor.authorZhao, YW
 
dc.contributor.authorBeling, CD
 
dc.contributor.authorXu, XL
 
dc.contributor.authorGong, M
 
dc.contributor.authorSun, NF
 
dc.contributor.authorSun, TN
 
dc.contributor.authorChen, XD
 
dc.contributor.authorZhang, RG
 
dc.contributor.authorLiu, SL
 
dc.contributor.authorYang, GY
 
dc.contributor.authorQian, JJ
 
dc.contributor.authorSun, MF
 
dc.contributor.authorLiu, XL
 
dc.date.accessioned2007-01-08T02:31:16Z
 
dc.date.available2007-01-08T02:31:16Z
 
dc.date.issued1998
 
dc.description.abstractThe concentration of hydrogen-indium vacancy complex V InH 4 in liquid encapsulated Czochralski undoped and Fe-doped n-type InP has been studied by low-temperature infrared absorption spectroscopy. The V InH 4 complex is found to be a dominant intrinsic shallow donor defect with concentrations up to ∼10 16 cm -3 in as-grown liquid encapsulated Czochralski InP. The concentration of the V InH 4 complex is found to increase with the compensation ratio in good agreement with the proposed defect formation model of Walukiewicz [W. Walukiewicz, Phys. Rev. B 37, 4760 (1998); Appl. Phys. Lett. 54, 2094 (1989)], which predicts a Fermi-level-dependent concentration of amphoteric defects. © 1998 American Institute of Physics.
 
dc.description.naturepublished_or_final_version
 
dc.format.extent50164 bytes
 
dc.format.extent9781 bytes
 
dc.format.mimetypeapplication/pdf
 
dc.format.mimetypetext/plain
 
dc.identifier.citationApplied Physics Letters, 1998, v. 73 n. 9, p. 1275-1277 [How to Cite?]
DOI: http://dx.doi.org/10.1063/1.122270
 
dc.identifier.doihttp://dx.doi.org/10.1063/1.122270
 
dc.identifier.epage1277
 
dc.identifier.hkuros38916
 
dc.identifier.isiWOS:000083351600037
 
dc.identifier.issn0003-6951
2013 Impact Factor: 3.515
 
dc.identifier.issue9
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-0000710775
 
dc.identifier.spage1275
 
dc.identifier.urihttp://hdl.handle.net/10722/42188
 
dc.identifier.volume73
 
dc.languageeng
 
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
 
dc.publisher.placeUnited States
 
dc.relation.ispartofApplied Physics Letters
 
dc.relation.referencesReferences in Scopus
 
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.subjectPhysics engineering
 
dc.titleCompensation ratio-dependent concentration of a V InH 4 complex in n-type liquid encapsulated Czochralski InP
 
dc.typeArticle
 
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Author Affiliations
  1. The University of Hong Kong
  2. Institute of Semiconductors Chinese Academy of Sciences
  3. Hebei Semiconductor Research Institute