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Article: Compensation ratio-dependent concentration of a V InH 4 complex in n-type liquid encapsulated Czochralski InP

TitleCompensation ratio-dependent concentration of a V InH 4 complex in n-type liquid encapsulated Czochralski InP
Authors
KeywordsPhysics engineering
Issue Date1998
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1998, v. 73 n. 9, p. 1275-1277 How to Cite?
AbstractThe concentration of hydrogen-indium vacancy complex V InH 4 in liquid encapsulated Czochralski undoped and Fe-doped n-type InP has been studied by low-temperature infrared absorption spectroscopy. The V InH 4 complex is found to be a dominant intrinsic shallow donor defect with concentrations up to ∼10 16 cm -3 in as-grown liquid encapsulated Czochralski InP. The concentration of the V InH 4 complex is found to increase with the compensation ratio in good agreement with the proposed defect formation model of Walukiewicz [W. Walukiewicz, Phys. Rev. B 37, 4760 (1998); Appl. Phys. Lett. 54, 2094 (1989)], which predicts a Fermi-level-dependent concentration of amphoteric defects. © 1998 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42188
ISSN
2014 Impact Factor: 3.302
2014 SCImago Journal Rankings: 1.624
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorFung, Sen_HK
dc.contributor.authorZhao, YWen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorXu, XLen_HK
dc.contributor.authorGong, Men_HK
dc.contributor.authorSun, NFen_HK
dc.contributor.authorSun, TNen_HK
dc.contributor.authorChen, XDen_HK
dc.contributor.authorZhang, RGen_HK
dc.contributor.authorLiu, SLen_HK
dc.contributor.authorYang, GYen_HK
dc.contributor.authorQian, JJen_HK
dc.contributor.authorSun, MFen_HK
dc.contributor.authorLiu, XLen_HK
dc.date.accessioned2007-01-08T02:31:16Z-
dc.date.available2007-01-08T02:31:16Z-
dc.date.issued1998en_HK
dc.identifier.citationApplied Physics Letters, 1998, v. 73 n. 9, p. 1275-1277en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42188-
dc.description.abstractThe concentration of hydrogen-indium vacancy complex V InH 4 in liquid encapsulated Czochralski undoped and Fe-doped n-type InP has been studied by low-temperature infrared absorption spectroscopy. The V InH 4 complex is found to be a dominant intrinsic shallow donor defect with concentrations up to ∼10 16 cm -3 in as-grown liquid encapsulated Czochralski InP. The concentration of the V InH 4 complex is found to increase with the compensation ratio in good agreement with the proposed defect formation model of Walukiewicz [W. Walukiewicz, Phys. Rev. B 37, 4760 (1998); Appl. Phys. Lett. 54, 2094 (1989)], which predicts a Fermi-level-dependent concentration of amphoteric defects. © 1998 American Institute of Physics.en_HK
dc.format.extent50164 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.subjectPhysics engineeringen_HK
dc.titleCompensation ratio-dependent concentration of a V InH 4 complex in n-type liquid encapsulated Czochralski InPen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=73&issue=9&spage=1275&epage=1277&date=1998&atitle=Compensation+Ratio-Dependent+Concentration+of+a+VInH4+Complex+in+n-Type+Liquid+Encapsulated+Czochralski+InPen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.122270en_HK
dc.identifier.scopuseid_2-s2.0-0000710775en_HK
dc.identifier.hkuros38916-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0000710775&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume73en_HK
dc.identifier.issue9en_HK
dc.identifier.spage1275en_HK
dc.identifier.epage1277en_HK
dc.identifier.isiWOS:000083351600037-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridZhao, YW=55231668500en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridXu, XL=35188165400en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK
dc.identifier.scopusauthoridSun, NF=7202556986en_HK
dc.identifier.scopusauthoridSun, TN=7402922751en_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridZhang, RG=15724093900en_HK
dc.identifier.scopusauthoridLiu, SL=37102452500en_HK
dc.identifier.scopusauthoridYang, GY=8693019600en_HK
dc.identifier.scopusauthoridQian, JJ=7402196249en_HK
dc.identifier.scopusauthoridSun, MF=7403180812en_HK
dc.identifier.scopusauthoridLiu, XL=25960872600en_HK

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