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Article: Compensation ratio-dependent concentration of a V InH 4 complex in n-type liquid encapsulated Czochralski InP

TitleCompensation ratio-dependent concentration of a V InH 4 complex in n-type liquid encapsulated Czochralski InP
Authors
Fung, SZhao, YWBeling, CDXu, XLGong, MSun, NFSun, TNChen, XDZhang, RGLiu, SLYang, GYQian, JJSun, MFLiu, XL
KeywordsPhysics engineering
Issue Date1998
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1998, v. 73 n. 9, p. 1275-1277 How to Cite?
DOI: http://dx.doi.org/10.1063/1.122270
AbstractThe concentration of hydrogen-indium vacancy complex V InH 4 in liquid encapsulated Czochralski undoped and Fe-doped n-type InP has been studied by low-temperature infrared absorption spectroscopy. The V InH 4 complex is found to be a dominant intrinsic shallow donor defect with concentrations up to ∼10 16 cm -3 in as-grown liquid encapsulated Czochralski InP. The concentration of the V InH 4 complex is found to increase with the compensation ratio in good agreement with the proposed defect formation model of Walukiewicz [W. Walukiewicz, Phys. Rev. B 37, 4760 (1998); Appl. Phys. Lett. 54, 2094 (1989)], which predicts a Fermi-level-dependent concentration of amphoteric defects. © 1998 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42188
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000083351600037
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorFung, Sen_HK
dc.contributor.authorZhao, YWen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorXu, XLen_HK
dc.contributor.authorGong, Men_HK
dc.contributor.authorSun, NFen_HK
dc.contributor.authorSun, TNen_HK
dc.contributor.authorChen, XDen_HK
dc.contributor.authorZhang, RGen_HK
dc.contributor.authorLiu, SLen_HK
dc.contributor.authorYang, GYen_HK
dc.contributor.authorQian, JJen_HK
dc.contributor.authorSun, MFen_HK
dc.contributor.authorLiu, XLen_HK
dc.date.accessioned2007-01-08T02:31:16Z-
dc.date.available2007-01-08T02:31:16Z-
dc.date.issued1998en_HK
dc.identifier.citationApplied Physics Letters, 1998, v. 73 n. 9, p. 1275-1277-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42188-
dc.description.abstractThe concentration of hydrogen-indium vacancy complex V InH 4 in liquid encapsulated Czochralski undoped and Fe-doped n-type InP has been studied by low-temperature infrared absorption spectroscopy. The V InH 4 complex is found to be a dominant intrinsic shallow donor defect with concentrations up to ∼10 16 cm -3 in as-grown liquid encapsulated Czochralski InP. The concentration of the V InH 4 complex is found to increase with the compensation ratio in good agreement with the proposed defect formation model of Walukiewicz [W. Walukiewicz, Phys. Rev. B 37, 4760 (1998); Appl. Phys. Lett. 54, 2094 (1989)], which predicts a Fermi-level-dependent concentration of amphoteric defects. © 1998 American Institute of Physics.en_HK
dc.format.extent50164 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 1998 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 1998, v. 73 n. 9, p. 1275-1277 and may be found at https://doi.org/10.1063/1.122270-
dc.subjectPhysics engineeringen_HK
dc.titleCompensation ratio-dependent concentration of a V InH 4 complex in n-type liquid encapsulated Czochralski InPen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=73&issue=9&spage=1275&epage=1277&date=1998&atitle=Compensation+Ratio-Dependent+Concentration+of+a+VInH4+Complex+in+n-Type+Liquid+Encapsulated+Czochralski+InPen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.122270en_HK
dc.identifier.scopuseid_2-s2.0-0000710775en_HK
dc.identifier.hkuros38916-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0000710775&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume73en_HK
dc.identifier.issue9en_HK
dc.identifier.spage1275en_HK
dc.identifier.epage1277en_HK
dc.identifier.isiWOS:000083351600037-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridZhao, YW=55231668500en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridXu, XL=35188165400en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK
dc.identifier.scopusauthoridSun, NF=7202556986en_HK
dc.identifier.scopusauthoridSun, TN=7402922751en_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridZhang, RG=15724093900en_HK
dc.identifier.scopusauthoridLiu, SL=37102452500en_HK
dc.identifier.scopusauthoridYang, GY=8693019600en_HK
dc.identifier.scopusauthoridQian, JJ=7402196249en_HK
dc.identifier.scopusauthoridSun, MF=7403180812en_HK
dc.identifier.scopusauthoridLiu, XL=25960872600en_HK
dc.identifier.issnl0003-6951-

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