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Article: A deep level transient spectroscopy study of electron irradiation induced deep levels in p-type 6H–SiC

TitleA deep level transient spectroscopy study of electron irradiation induced deep levels in p-type 6H–SiC
Authors
KeywordsPhysics engineering
Issue Date1999
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1999, v. 85 n. 10, p. 7120-7122 How to Cite?
Abstract1.7 MeV electron irradiation-induced deep levels in p-type 6H–SiC have been studied using deep level transient spectroscopy. Two deep hole traps are observed, which are located at EV+0.55 eV and EV+0.78 eV. They have been identified as two different defects because they have different thermal behaviors. These defects at EV+0.55 eV and EV+0.78 eV are annealed out at 500–200 °C, respectively, and are different from the main defects E1/E2, Z1/Z2 observed in electron irradiated n-type 6H–SiC. This indicates that new defects have been formed in p-type 6H–SiC during electron irradiation. ©1999 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42189
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorGong, Men_HK
dc.contributor.authorFung, SHYen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorYou, Zen_HK
dc.date.accessioned2007-01-08T02:31:17Z-
dc.date.available2007-01-08T02:31:17Z-
dc.date.issued1999en_HK
dc.identifier.citationJournal of Applied Physics, 1999, v. 85 n. 10, p. 7120-7122en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42189-
dc.description.abstract1.7 MeV electron irradiation-induced deep levels in p-type 6H–SiC have been studied using deep level transient spectroscopy. Two deep hole traps are observed, which are located at EV+0.55 eV and EV+0.78 eV. They have been identified as two different defects because they have different thermal behaviors. These defects at EV+0.55 eV and EV+0.78 eV are annealed out at 500–200 °C, respectively, and are different from the main defects E1/E2, Z1/Z2 observed in electron irradiated n-type 6H–SiC. This indicates that new defects have been formed in p-type 6H–SiC during electron irradiation. ©1999 American Institute of Physics.en_HK
dc.format.extent55113 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physics-
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleA deep level transient spectroscopy study of electron irradiation induced deep levels in p-type 6H–SiCen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=85&issue=10&spage=7120&epage=7122&date=1999&atitle=A+deep+level+transient+spectroscopy+study+of+electron+irradiation+induced+deep+levels+in+p-type+6H–SiCen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.370520en_HK
dc.identifier.scopuseid_2-s2.0-0000206203-
dc.identifier.hkuros40644-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0000206203&selection=ref&src=s&origin=recordpage-
dc.identifier.volume85-
dc.identifier.issue10-
dc.identifier.spage7120-
dc.identifier.epage7122-
dc.identifier.isiWOS:000080136000016-
dc.publisher.placeUnited States-
dc.identifier.scopusauthoridGong, M=9273057400-
dc.identifier.scopusauthoridFung, S=7201970040-
dc.identifier.scopusauthoridBeling, CD=7005864180-
dc.identifier.scopusauthoridYou, Z=7102207882-

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