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	Title	Author(s)	Issue Date
	Coherent quantum dynamics of excitons in monolayer transition metal dichalcogenides Proceeding/Conference:Proceedings of SPIE - The International Society for Optical Engineering	Moody, GalanHao, KaiDass, Chandriker KavirSingh, AkshayXu, LixiangTran, KhaChen, Chang HsiaoLi, Ming YangLi, Lain JongClark, GenevieveBerghäuser, GunnarMalic, ErminKnorr, AndreasXu, XiaodongLi, Xiaoqin	2016
	Temperature and magnetic field dependent photoluminescence from carbon nanotubes Proceeding/Conference:International Journal of Modern Physics B	Nicholas, R. J.Mortimer, I. B.Li, L. J.Nish, A.Portugall, O.Rikken, G. L.J.A.	2007
	Sub-0.5 nm interfacial dielectric enables superior electrostatics: 65 mV/dec top-gated carbon nanotube FETs at 15 nm Gate Length Proceeding/Conference:International Electron Devices Meeting (IEDM)	Pitner, G.Zhang, Z.Lin, Q.Su, S. K.Gilardi, C.Kuo, C.Kashyap, H.Weiss, T.Yu, Z.Chao, T. A.Li, L. J.Mitra, S.Wong, H. S.P.Cai, J.Kummel, A.Bandaru, P.Passlack, M.	2020
	High On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology	Chou, Ang ShengShen, Pin ChunCheng, Chao ChingLu, Li SyuanChueh, Wei ChenLi, Ming YangPitner, GregoryChang, Wen HaoWu, Chih I.Kong, JingLi, Lain JongWong, H. S.Philip	2020
	Monolithic Heterogeneous Integration of BEOL Power Gating Transistors of Carbon Nanotube Networks with FEOL Si Ring Oscillator Circuits Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM	Cheng, Chao ChingLi, Lain JongWong, H. S.PhilipLu, Chun ChiehChao, Tsu AngChou, Ang ShengChiang, Hung LiChen, Tzu ChiangGao, TianqiZhao, JianwenCui, Zheng	2019
	First demonstration of 40-nm channel length top-gate WS<inf>2</inf> pFET using channel area-selective CVD growth directly on SiO<inf>x</inf>/Si substrate Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology	Cheng, Chao ChingChung, Yun YanLi, Uing YangLin, Chao TingLi, Chi FengChen, Jyun HongLai, Tung YenLi, Kai ShinShieh, Jia MinSu, Sheng KaiChiang, Hung LiChen, Tzu ChiangLi, Lain JongWong, H. S.PhilipChien, Chao Hsin	2019
	Experimental observation of chiral phonons in monolayer WSe<inf>2</inf> Proceeding/Conference:Proceedings of SPIE - The International Society for Optical Engineering	Zhu, HanyuYi, JunLi, Ming YangXiao, JunZhang, LifaYang, Chih WenYang, SuiKaindl, Robert A.Li, Lain JongWang, YuanZhang, Xiang	2019
	High Performance WSe <inf>2</inf> Transistors with Multilayer Graphene Source/Drain Proceeding/Conference:2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings	Lien, ChenhsinTang, Hao LingChiu, Ming HuiHou, Kuan JhihYang, Shih HsienSu, Jhih FongLin, Yen FuLi, Lain Jong	2018
	Spectroscopic signature of chiral phonons in 2D materials Proceeding/Conference:Conference on Lasers and Electro-Optics	Zhu, HanyuYi, JunLi, Ming YangXiao, JunZhang, LifaYang, Chih WenWang, YuanKaindl, Robert A.Li, Lain JongZhang, Xiang	2018
	Circular polarized emission of tungsten diselenide (WSe<inf>2</inf>) atomic layers with plasmonic metasurface Proceeding/Conference:Conference on Lasers and Electro-Optics	Lin, Hsiang TingChang, Chiao YunCheng, Pi JuLi, Ming YangCheng, Chia ChinChang, Shu WeiLi, Lain JongChu, Chih WeiWei, Pei KuenShih, Min Hsiung	2018
	Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant Proceeding/Conference:Japanese Journal of Applied Physics	Matsuoka, HirofumiKanahashi, KaitoTanaka, NaokiShoji, YoshiakiLi, Lain JongPu, JiangIto, HiroshiOhta, HiromichiFukushima, TakanoriTakenobu, Taishi	2018
	Monolayer MoS<inf>2</inf> for nonvolatile memory applications Proceeding/Conference:2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings	Chang, Kai PingWang, Jer ChyiChen, Chang HsiaoLi, Lain JongLai, Chao Sung	2017
	Photoluminescence enhancement in defect monolayer MoSe<inf>2</inf> by hydrohalic acid treatment Proceeding/Conference:2016 Conference on Lasers and Electro-Optics, CLEO 2016	Kao, Tsung ShengHan, Hau VeiLu, Ang YuLu, Li SyuanHuang, Jing KaiKuo, Hao ChungChang, Wen HaoLi, Lain JongShi, Yumeng	2016
	A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS<inf>2</inf> FET Proceeding/Conference:International Electron Devices Meeting (IEDM)	Tang, Ying TsanLi, Kai ShinLi, Lain JongLi, Ming YangLin, Chang HsienChen, Yi JuChen, Chun ChiSu, Chuan JungWu, Bo WeiWu, Cheng SanChen, Min ChengShieh, Jia MinYeh, Wen KuanSu, Po ChengWang, TahuiYang, Fu LiangHu, Chenming	2017
	MoS<inf>2</inf> U-shape MOSFET with 10 nm channel length and poly-Si source/drain serving as seed for full wafer CVD MoS<inf>2</inf> availability Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology	Li, Kai ShinWu, Bo WeiLi, Lain JongLi, Ming YangCheng, Chia Chin KevinHsu, Cho LunLin, Chang HsienChen, Yi JuChen, Chun ChiWu, Chien TingChen, Min ChengShieh, Jia MinYeh, Wen KuanChueh, Yu LunYang, Fu LiangHu, Chenming	2016
	Effects of electrolyte gating on photoluminescence spectra of large-area WSe2 monolayer films Proceeding/Conference:Japanese Journal of Applied Physics	Matsuki, KeiichiroPu, JiangKozawa, DaichiMatsuda, KazunariLi, Lain JongTakenobu, Taishi	2016
	TDDB reliability improvement in Cu damascene by using a bilayer-structured PECVD SiC dielectric barrier Proceeding/Conference:Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002	Chiang, C. C.Chen, M. C.Wu, Z. C.Li, L. J.Jang, S. M.Yu, C. H.Liang, M. S.	2002
	TMD FinFET with 4 nm thin body and back gate control for future low power technology Proceeding/Conference:International Electron Devices Meeting (IEDM)	Chen, Min ChengLi, Kai ShinLi, Lain JongLu, Ang YuLi, Ming YangChang, Yung HuangLin, Chang HsienChen, Yi JuHou, Yun FangChen, Chun ChiWu, Bo WeiWu, Cheng SanYang, IvyLee, Yao JenShieh, Jia MinYeh, Wen KuanShih, Jyun HongSu, Po ChengSachid, Angada B.Wang, TahuiYang, Fu LiangHu, Chenming	2015
	Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping Proceeding/Conference:Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA	Lin, Chih PinLyu, Li SyuanLin, Ching TingLiu, Pang ShiuanChang, Wen HaoLi, Lain JongHou, Tuo Hung	2015
	Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for V<inf>th</inf> matching and CMOS-compatible 3DFETs Proceeding/Conference:International Electron Devices Meeting (IEDM)	Chen, Min ChengLin, Chia YiLi, Kai HsinLi, Lain JongChen, Chang HsiaoChuang, Cheng HaoLee, Ming DaoChen, Yi JuHou, Yun FangLin, Chang HsienChen, Chun ChiWu, Bo WeiWu, Cheng SanYang, IvyLee, Yao JenYeh, Wen KuanWang, TahuiYang, Fu LiangHu, Chenming	2015