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Conference Paper: MoS2 U-shape MOSFET with 10 nm channel length and poly-Si source/drain serving as seed for full wafer CVD MoS2 availability

TitleMoS<inf>2</inf> U-shape MOSFET with 10 nm channel length and poly-Si source/drain serving as seed for full wafer CVD MoS<inf>2</inf> availability
Authors
Li, Kai ShinWu, Bo WeiLi, Lain JongLi, Ming YangCheng, Chia Chin KevinHsu, Cho LunLin, Chang HsienChen, Yi JuChen, Chun ChiWu, Chien TingChen, Min ChengShieh, Jia MinYeh, Wen KuanChueh, Yu LunYang, Fu LiangHu, Chenming
Issue Date2016
Citation
Digest of Technical Papers - Symposium on VLSI Technology, 2016, v. 2016-September, article no. 7573375 How to Cite?
DOI: http://dx.doi.org/10.1109/VLSIT.2016.7573375
AbstractA U-shape MoS pMOSFET with 10nm channel and poly-Si source/drain is demonstrated. The fabrication process is simple. Because the Si S/D serves as the nucleation seed for CVD MoS deposition, thin MoS is well deposited in the channel region any where over the fully scale oxide coated Si wafer. This is a big step forward toward a low cost multi-layer stacked TMD IC technology. 2 2 2
Persistent Identifierhttp://hdl.handle.net/10722/298177
ISSN
0743-1562
2023 SCImago Journal Rankings: 0.911

 

DC FieldValueLanguage
dc.contributor.authorLi, Kai Shin-
dc.contributor.authorWu, Bo Wei-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorLi, Ming Yang-
dc.contributor.authorCheng, Chia Chin Kevin-
dc.contributor.authorHsu, Cho Lun-
dc.contributor.authorLin, Chang Hsien-
dc.contributor.authorChen, Yi Ju-
dc.contributor.authorChen, Chun Chi-
dc.contributor.authorWu, Chien Ting-
dc.contributor.authorChen, Min Cheng-
dc.contributor.authorShieh, Jia Min-
dc.contributor.authorYeh, Wen Kuan-
dc.contributor.authorChueh, Yu Lun-
dc.contributor.authorYang, Fu Liang-
dc.contributor.authorHu, Chenming-
dc.date.accessioned2021-04-08T03:07:51Z-
dc.date.available2021-04-08T03:07:51Z-
dc.date.issued2016-
dc.identifier.citationDigest of Technical Papers - Symposium on VLSI Technology, 2016, v. 2016-September, article no. 7573375-
dc.identifier.issn0743-1562-
dc.identifier.urihttp://hdl.handle.net/10722/298177-
dc.description.abstractA U-shape MoS pMOSFET with 10nm channel and poly-Si source/drain is demonstrated. The fabrication process is simple. Because the Si S/D serves as the nucleation seed for CVD MoS deposition, thin MoS is well deposited in the channel region any where over the fully scale oxide coated Si wafer. This is a big step forward toward a low cost multi-layer stacked TMD IC technology. 2 2 2-
dc.languageeng-
dc.relation.ispartofDigest of Technical Papers - Symposium on VLSI Technology-
dc.titleMoS<inf>2</inf> U-shape MOSFET with 10 nm channel length and poly-Si source/drain serving as seed for full wafer CVD MoS<inf>2</inf> availability-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/VLSIT.2016.7573375-
dc.identifier.scopuseid_2-s2.0-84990966345-
dc.identifier.volume2016-September-
dc.identifier.spagearticle no. 7573375-
dc.identifier.epagearticle no. 7573375-
dc.identifier.issnl0743-1562-

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