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Conference Paper: Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant

TitleChemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant
Authors
Issue Date2018
Citation
Japanese Journal of Applied Physics, 2018, v. 57, n. 2, suppl. 2, article no. 02CB15 How to Cite?
AbstractHole carrier doping into single-crystalline transition metal dichalcogenide (TMDC) films can be achieved with various chemical reagents. However, large-area polycrystalline TMDC monolayers produced by a chemical vapor deposition (CVD) growth method have yet to be chemically doped. Here, we report that a salt of a two-coordinate boron cation, Mes B (Mes: 2,4,6-trimethylphenyl group), with a chemically stable tetrakis(pentafluorophenyl)borate anion, [(C F ) B] , can serve as an efficient hole-doping reagent for large-area CVD-grown tungsten diselenide (WSe ) films. Upon doping, the sheet resistance of large-area polycrystalline WSe monolayers decreased from 90 GΩ/sq to 3.2 kΩ/sq. 2 6 5 4 2 2 + -
Persistent Identifierhttp://hdl.handle.net/10722/298245
ISSN
2023 Impact Factor: 1.5
2023 SCImago Journal Rankings: 0.307
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorMatsuoka, Hirofumi-
dc.contributor.authorKanahashi, Kaito-
dc.contributor.authorTanaka, Naoki-
dc.contributor.authorShoji, Yoshiaki-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorPu, Jiang-
dc.contributor.authorIto, Hiroshi-
dc.contributor.authorOhta, Hiromichi-
dc.contributor.authorFukushima, Takanori-
dc.contributor.authorTakenobu, Taishi-
dc.date.accessioned2021-04-08T03:07:59Z-
dc.date.available2021-04-08T03:07:59Z-
dc.date.issued2018-
dc.identifier.citationJapanese Journal of Applied Physics, 2018, v. 57, n. 2, suppl. 2, article no. 02CB15-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/10722/298245-
dc.description.abstractHole carrier doping into single-crystalline transition metal dichalcogenide (TMDC) films can be achieved with various chemical reagents. However, large-area polycrystalline TMDC monolayers produced by a chemical vapor deposition (CVD) growth method have yet to be chemically doped. Here, we report that a salt of a two-coordinate boron cation, Mes B (Mes: 2,4,6-trimethylphenyl group), with a chemically stable tetrakis(pentafluorophenyl)borate anion, [(C F ) B] , can serve as an efficient hole-doping reagent for large-area CVD-grown tungsten diselenide (WSe ) films. Upon doping, the sheet resistance of large-area polycrystalline WSe monolayers decreased from 90 GΩ/sq to 3.2 kΩ/sq. 2 6 5 4 2 2 + --
dc.languageeng-
dc.relation.ispartofJapanese Journal of Applied Physics-
dc.titleChemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.7567/JJAP.57.02CB15-
dc.identifier.scopuseid_2-s2.0-85040942242-
dc.identifier.volume57-
dc.identifier.issue2, suppl. 2-
dc.identifier.spagearticle no. 02CB15-
dc.identifier.epagearticle no. 02CB15-
dc.identifier.eissn1347-4065-
dc.identifier.isiWOS:000425734800026-
dc.identifier.issnl0021-4922-

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