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Conference Paper: Monolithic Heterogeneous Integration of BEOL Power Gating Transistors of Carbon Nanotube Networks with FEOL Si Ring Oscillator Circuits

TitleMonolithic Heterogeneous Integration of BEOL Power Gating Transistors of Carbon Nanotube Networks with FEOL Si Ring Oscillator Circuits
Authors
Issue Date2019
Citation
Technical Digest - International Electron Devices Meeting, IEDM, 2019, v. 2019-December, article no. 8993593 How to Cite?
AbstractHigh performance carbon nanotube (CNT) network transistors with on-resistance (R ) of <250 Ω are successfully integrated as back-end-of-the-line (BEOL) power gating devices onto Si CMOS wafers manufactured using 28-nm process technology. When the power supply is connected through the BEOL CNT network header array, the front-end-of-the-line (FEOL) Si ring oscillators (ROs) achieve a similar quiescent current (I ) and have the comparable active power (P ) consumption under the same operation frequency as compared to the operation without the power gating CNT transistors. The fabrication of CNT devices in the BEOL is verified to cause no performance degradation in the underlying FEOL Si CMOS devices. This study has successfully demonstrated heterogeneous integration of advanced Si logic circuits with low-cost and high-mobility CNT transistors in the BEOL fabricated at low, BEOL-compatible temperatures (250 °C). on DDQ ACTIVE
Persistent Identifierhttp://hdl.handle.net/10722/298335
ISSN
2023 SCImago Journal Rankings: 1.047
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorCheng, Chao Ching-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorWong, H. S.Philip-
dc.contributor.authorLu, Chun Chieh-
dc.contributor.authorChao, Tsu Ang-
dc.contributor.authorChou, Ang Sheng-
dc.contributor.authorChiang, Hung Li-
dc.contributor.authorChen, Tzu Chiang-
dc.contributor.authorGao, Tianqi-
dc.contributor.authorZhao, Jianwen-
dc.contributor.authorCui, Zheng-
dc.date.accessioned2021-04-08T03:08:10Z-
dc.date.available2021-04-08T03:08:10Z-
dc.date.issued2019-
dc.identifier.citationTechnical Digest - International Electron Devices Meeting, IEDM, 2019, v. 2019-December, article no. 8993593-
dc.identifier.issn0163-1918-
dc.identifier.urihttp://hdl.handle.net/10722/298335-
dc.description.abstractHigh performance carbon nanotube (CNT) network transistors with on-resistance (R ) of <250 Ω are successfully integrated as back-end-of-the-line (BEOL) power gating devices onto Si CMOS wafers manufactured using 28-nm process technology. When the power supply is connected through the BEOL CNT network header array, the front-end-of-the-line (FEOL) Si ring oscillators (ROs) achieve a similar quiescent current (I ) and have the comparable active power (P ) consumption under the same operation frequency as compared to the operation without the power gating CNT transistors. The fabrication of CNT devices in the BEOL is verified to cause no performance degradation in the underlying FEOL Si CMOS devices. This study has successfully demonstrated heterogeneous integration of advanced Si logic circuits with low-cost and high-mobility CNT transistors in the BEOL fabricated at low, BEOL-compatible temperatures (250 °C). on DDQ ACTIVE-
dc.languageeng-
dc.relation.ispartofTechnical Digest - International Electron Devices Meeting, IEDM-
dc.titleMonolithic Heterogeneous Integration of BEOL Power Gating Transistors of Carbon Nanotube Networks with FEOL Si Ring Oscillator Circuits-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IEDM19573.2019.8993593-
dc.identifier.scopuseid_2-s2.0-85074977935-
dc.identifier.volume2019-December-
dc.identifier.spagearticle no. 8993593-
dc.identifier.epagearticle no. 8993593-
dc.identifier.isiWOS:000553550000160-
dc.identifier.issnl0163-1918-

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