File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Conference Paper: Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETs

TitleHybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for V<inf>th</inf> matching and CMOS-compatible 3DFETs
Authors
Chen, Min ChengLin, Chia YiLi, Kai HsinLi, Lain JongChen, Chang HsiaoChuang, Cheng HaoLee, Ming DaoChen, Yi JuHou, Yun FangLin, Chang HsienChen, Chun ChiWu, Bo WeiWu, Cheng SanYang, IvyLee, Yao JenYeh, Wen KuanWang, TahuiYang, Fu LiangHu, Chenming
Issue Date2015
Citation
2014 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, 15-17 December 2014. In International Electron Devices Meeting (IEDM), 2015 How to Cite?
DOI: http://dx.doi.org/10.1109/IEDM.2014.7047163
AbstractStackable 3DFETs such as FinFET using hybrid Si/MoS channels were developed using a fully CMOS-compatible process. Adding several molecular layers (3-16 layers) of the transition-metal dichalcogenide (TMD), MoS to Si fin and nanowire resulted in improved (+25%) I of the FinFET and nanowire FET (NWFET). The PFETs also operated effectively and the N/P device V are low and matched perfectly. The proposed heterogeneous Si/TMD 3DFETs can be useful in future electronics. 2 2 on,n th
Persistent Identifierhttp://hdl.handle.net/10722/298129
ISSN
0163-1918
2020 SCImago Journal Rankings: 0.827
ISI Accession Number ID
WOS:000370384800201

 

DC FieldValueLanguage
dc.contributor.authorChen, Min Cheng-
dc.contributor.authorLin, Chia Yi-
dc.contributor.authorLi, Kai Hsin-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorChen, Chang Hsiao-
dc.contributor.authorChuang, Cheng Hao-
dc.contributor.authorLee, Ming Dao-
dc.contributor.authorChen, Yi Ju-
dc.contributor.authorHou, Yun Fang-
dc.contributor.authorLin, Chang Hsien-
dc.contributor.authorChen, Chun Chi-
dc.contributor.authorWu, Bo Wei-
dc.contributor.authorWu, Cheng San-
dc.contributor.authorYang, Ivy-
dc.contributor.authorLee, Yao Jen-
dc.contributor.authorYeh, Wen Kuan-
dc.contributor.authorWang, Tahui-
dc.contributor.authorYang, Fu Liang-
dc.contributor.authorHu, Chenming-
dc.date.accessioned2021-04-08T03:07:45Z-
dc.date.available2021-04-08T03:07:45Z-
dc.date.issued2015-
dc.identifier.citation2014 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, 15-17 December 2014. In International Electron Devices Meeting (IEDM), 2015-
dc.identifier.issn0163-1918-
dc.identifier.urihttp://hdl.handle.net/10722/298129-
dc.description.abstractStackable 3DFETs such as FinFET using hybrid Si/MoS channels were developed using a fully CMOS-compatible process. Adding several molecular layers (3-16 layers) of the transition-metal dichalcogenide (TMD), MoS to Si fin and nanowire resulted in improved (+25%) I of the FinFET and nanowire FET (NWFET). The PFETs also operated effectively and the N/P device V are low and matched perfectly. The proposed heterogeneous Si/TMD 3DFETs can be useful in future electronics. 2 2 on,n th-
dc.languageeng-
dc.relation.ispartofInternational Electron Devices Meeting (IEDM)-
dc.titleHybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for V<inf>th</inf> matching and CMOS-compatible 3DFETs-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IEDM.2014.7047163-
dc.identifier.scopuseid_2-s2.0-84938283104-
dc.identifier.isiWOS:000370384800201-
dc.identifier.issnl0163-1918-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats