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- Publisher Website: 10.1109/IEDM.2014.7047163
- Scopus: eid_2-s2.0-84938283104
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Conference Paper: Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for Vth matching and CMOS-compatible 3DFETs
Title | Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for V<inf>th</inf> matching and CMOS-compatible 3DFETs |
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Authors | |
Issue Date | 2015 |
Citation | 2014 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, 15-17 December 2014. In International Electron Devices Meeting (IEDM), 2015 How to Cite? |
Abstract | Stackable 3DFETs such as FinFET using hybrid Si/MoS channels were developed using a fully CMOS-compatible process. Adding several molecular layers (3-16 layers) of the transition-metal dichalcogenide (TMD), MoS to Si fin and nanowire resulted in improved (+25%) I of the FinFET and nanowire FET (NWFET). The PFETs also operated effectively and the N/P device V are low and matched perfectly. The proposed heterogeneous Si/TMD 3DFETs can be useful in future electronics. 2 2 on,n th |
Persistent Identifier | http://hdl.handle.net/10722/298129 |
ISSN | 2023 SCImago Journal Rankings: 1.047 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Chen, Min Cheng | - |
dc.contributor.author | Lin, Chia Yi | - |
dc.contributor.author | Li, Kai Hsin | - |
dc.contributor.author | Li, Lain Jong | - |
dc.contributor.author | Chen, Chang Hsiao | - |
dc.contributor.author | Chuang, Cheng Hao | - |
dc.contributor.author | Lee, Ming Dao | - |
dc.contributor.author | Chen, Yi Ju | - |
dc.contributor.author | Hou, Yun Fang | - |
dc.contributor.author | Lin, Chang Hsien | - |
dc.contributor.author | Chen, Chun Chi | - |
dc.contributor.author | Wu, Bo Wei | - |
dc.contributor.author | Wu, Cheng San | - |
dc.contributor.author | Yang, Ivy | - |
dc.contributor.author | Lee, Yao Jen | - |
dc.contributor.author | Yeh, Wen Kuan | - |
dc.contributor.author | Wang, Tahui | - |
dc.contributor.author | Yang, Fu Liang | - |
dc.contributor.author | Hu, Chenming | - |
dc.date.accessioned | 2021-04-08T03:07:45Z | - |
dc.date.available | 2021-04-08T03:07:45Z | - |
dc.date.issued | 2015 | - |
dc.identifier.citation | 2014 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, 15-17 December 2014. In International Electron Devices Meeting (IEDM), 2015 | - |
dc.identifier.issn | 0163-1918 | - |
dc.identifier.uri | http://hdl.handle.net/10722/298129 | - |
dc.description.abstract | Stackable 3DFETs such as FinFET using hybrid Si/MoS channels were developed using a fully CMOS-compatible process. Adding several molecular layers (3-16 layers) of the transition-metal dichalcogenide (TMD), MoS to Si fin and nanowire resulted in improved (+25%) I of the FinFET and nanowire FET (NWFET). The PFETs also operated effectively and the N/P device V are low and matched perfectly. The proposed heterogeneous Si/TMD 3DFETs can be useful in future electronics. 2 2 on,n th | - |
dc.language | eng | - |
dc.relation.ispartof | International Electron Devices Meeting (IEDM) | - |
dc.title | Hybrid Si/TMD 2D electronic double channels fabricated using solid CVD few-layer-MoS2 stacking for V<inf>th</inf> matching and CMOS-compatible 3DFETs | - |
dc.type | Conference_Paper | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/IEDM.2014.7047163 | - |
dc.identifier.scopus | eid_2-s2.0-84938283104 | - |
dc.identifier.isi | WOS:000370384800201 | - |
dc.identifier.issnl | 0163-1918 | - |