File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Conference Paper: High On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping

TitleHigh On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping
Authors
Issue Date2020
Citation
Digest of Technical Papers - Symposium on VLSI Technology, 2020, v. 2020-June, article no. 9265040 How to Cite?
AbstractWe demonstrate the highest nFET current of 390 μA/μm at VDS = 1 V based on CVD Mos2 mono layers without intentional doping. The transistor exhibits good subthreshold swing of 109 m V/ decade, large ION IOFF ratio of 4*108, and nearly zero DIBL. The high on-current achieved in monolayer Mos2 nFET is mainly attributed to the thin EOT 2 nm of HfOx gate oxide, short gate length of 100 nm, and low contact resistance 1.1 kω- um.
Persistent Identifierhttp://hdl.handle.net/10722/298370
ISSN

 

DC FieldValueLanguage
dc.contributor.authorChou, Ang Sheng-
dc.contributor.authorShen, Pin Chun-
dc.contributor.authorCheng, Chao Ching-
dc.contributor.authorLu, Li Syuan-
dc.contributor.authorChueh, Wei Chen-
dc.contributor.authorLi, Ming Yang-
dc.contributor.authorPitner, Gregory-
dc.contributor.authorChang, Wen Hao-
dc.contributor.authorWu, Chih I.-
dc.contributor.authorKong, Jing-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorWong, H. S.Philip-
dc.date.accessioned2021-04-08T03:08:16Z-
dc.date.available2021-04-08T03:08:16Z-
dc.date.issued2020-
dc.identifier.citationDigest of Technical Papers - Symposium on VLSI Technology, 2020, v. 2020-June, article no. 9265040-
dc.identifier.issn0743-1562-
dc.identifier.urihttp://hdl.handle.net/10722/298370-
dc.description.abstractWe demonstrate the highest nFET current of 390 μA/μm at VDS = 1 V based on CVD Mos2 mono layers without intentional doping. The transistor exhibits good subthreshold swing of 109 m V/ decade, large ION IOFF ratio of 4*108, and nearly zero DIBL. The high on-current achieved in monolayer Mos2 nFET is mainly attributed to the thin EOT 2 nm of HfOx gate oxide, short gate length of 100 nm, and low contact resistance 1.1 kω- um.-
dc.languageeng-
dc.relation.ispartofDigest of Technical Papers - Symposium on VLSI Technology-
dc.titleHigh On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/VLSITechnology18217.2020.9265040-
dc.identifier.scopuseid_2-s2.0-85098112157-
dc.identifier.volume2020-June-
dc.identifier.spagearticle no. 9265040-
dc.identifier.epagearticle no. 9265040-
dc.identifier.issnl0743-1562-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats