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Conference Paper: Grain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping

TitleGrain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping
Authors
Lin, Chih PinLyu, Li SyuanLin, Ching TingLiu, Pang ShiuanChang, Wen HaoLi, Lain JongHou, Tuo Hung
Issue Date2015
Citation
Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 2015, v. 2015-August, p. 476-479 How to Cite?
DOI: http://dx.doi.org/10.1109/IPFA.2015.7224436
AbstractWe investigated different CVD-synthesized MoS2 films, aiming to correlate the device characteristics with the grain size. The grain size of MoS2 can be precisely characterized through nondestructive second harmonic generation mapping based on the degree of inversion symmetry. The devices with larger grains at the channel region show improved on/off current ratio, which can be explained by the less carrier scattering caused by the grain boundaries.
Persistent Identifierhttp://hdl.handle.net/10722/298139

 

DC FieldValueLanguage
dc.contributor.authorLin, Chih Pin-
dc.contributor.authorLyu, Li Syuan-
dc.contributor.authorLin, Ching Ting-
dc.contributor.authorLiu, Pang Shiuan-
dc.contributor.authorChang, Wen Hao-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorHou, Tuo Hung-
dc.date.accessioned2021-04-08T03:07:46Z-
dc.date.available2021-04-08T03:07:46Z-
dc.date.issued2015-
dc.identifier.citationProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 2015, v. 2015-August, p. 476-479-
dc.identifier.urihttp://hdl.handle.net/10722/298139-
dc.description.abstractWe investigated different CVD-synthesized MoS2 films, aiming to correlate the device characteristics with the grain size. The grain size of MoS2 can be precisely characterized through nondestructive second harmonic generation mapping based on the degree of inversion symmetry. The devices with larger grains at the channel region show improved on/off current ratio, which can be explained by the less carrier scattering caused by the grain boundaries.-
dc.languageeng-
dc.relation.ispartofProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA-
dc.titleGrain size effect of monolayer MoS2 transistors characterized by second harmonic generation mapping-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IPFA.2015.7224436-
dc.identifier.scopuseid_2-s2.0-84949804995-
dc.identifier.volume2015-August-
dc.identifier.spage476-
dc.identifier.epage479-

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