Browsing "Electrical & Electronic Engineering: Journal/Magazine Articles" by Author rp00130

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Showing results 53 to 72 of 362 < previous   next >
TitleAuthor(s)Issue DateViews
 
Dependence of sensing performance of OTFT-based H2 sensor on channel length
Journal:International Journal of Hydrogen Energy
LI, BLai, PTTang, WM
2021
 
Design of Superparamagnetic Nanoparticles for Magnetic Particle Imaging (MPI)
Journal:International Journal of Molecular Sciences
Du, YLai, PTLeung, CHPong, PWT
2013
34
 
Design of vertically-stacked polychromatic light-emitting diodes
Journal:Optics Express
Hui, KNWang, XHLi, ZLLai, PTChoi, HW
2009
227
 
Determination of Optimal Insulaor Thickness for MISiC Hydrogen Sensors
Journal:Solid-state electronics
Xu, J PLai, PTHan, BTang, WM
2004
121
 
Dynamic-stress-induced enhanced degradation of 1/f noise in n-MOSFET's
Journal:IEEE Transactions on Electron Devices
Xu, JPLai, PTCheng, YC
2000
107
 
Effect of dopant redistribution in gate electrode on surface plasmon resonance in InGaZnO thin-film transistors
Journal:AIP Advances
Su, HuiTang, Wing ManLai, Pui To
1-Nov-2022
 
Effect of indium content on performance and reliability of InGaN/GaN light-emitting diodes
Journal:Journal of Applied Physics
Li, ZLTripathy, SLai, PTChoi, HW
2009
148
 
Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack
Journal:Chinese Physics
Zhang, XFXu, JPLai, PTLi, CXGuan, JG
2007
 
Effect of SiO2/SiC interface on inversion channel electron mobility of 4H-SiC n-MOSFET
Journal:Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Xu, JWu, HLai, PTHan, B
2004
 
Effective passivation of HfO2/Ge interface by using nitrided germanate as passivation interlayer
Journal:physica status solidi (a)
Cheng, ZXXu, JPLiu, LHuang, YLai, PTTang, WM
2017
 
Effects of a Gate-Electrode/Gate-Dielectric Interlayer on Carrier Mobility for Pentacene Organic Thin-Film Transistors
Journal:IEEE Electron Device Letters
MA, YXTANG, WMLai, PT
2018
13
 
Effects of annealing conditions on humidity-sensing characteristics of SrNbxTi1-xO3 thin-film resistor on SiO 2/Si substrate
Journal:Sensors and Actuators, A: Physical
Li, GQLai, PTLi, BHuang, MQZeng, SHLiu, YR
2003
138
 
Effects of annealing conditions on photoelectrical properties of Ba1-xSrxNbyTi1-yO3 thin-film resistor
Journal:Smart Materials and Structures
Li, BLo, HBLai, PTLiu, YRLi, GQHuang, MQ
2006
157
 
Effects of annealing on electrical performance of multilayer MoS2 transistors with atomic layer deposited HfO2 gate dielectric
Journal:Applied Physics Express
Wen, MXu, JPLiu, LLai, PTTang, WM
2016
 
Effects of annealing temperature and gas on pentacene OTFTs with HfLaO as gate dielectric
Journal:IEEE Transactions on Device and Materials Reliability
Deng, LFLiu, YRChoi, HWXu, JPChe, CMLai, PT
2012
189
 
Effects of annealing temperature of NbLaO gate dielectric on electrical properties of ZnO thin-film transistor
Journal:Journal of Physics Communications
Liu, YRHuang, HLai, PTWu, WJChen, RS
2017
56
 
Effects of Ar+ back-surface gettering on the properties of flicker noise in n-channel nitrided MOSFETs
Journal:Solid-State Electronics
Surya, CWang, WFong, WKChan, CHLai, PT
1996
125
 
Effects of Back Interface on Performance of Dual-Gate InGaZnO Thin-Film Transistor With an Unisolated Top Gate Structure
Journal:IEEE Electron Device Letters
Zhang, CLi, DLai, PTHuang, XD
2021
1
 
Effects of Catalytic-Electrode Thickness on a Hydrogen Sensor Based on Organic Thin-Film Transistor
Journal:Physica Status Solidi A: Applications and Materials Science
LI, BLai, PTTang, WM
2018
28
 
Effects of ceramic-film thickness on humidity sensitivity of Al/Ba1-xLaxNbyTi1-yO3/SiO 2/Si structure
Journal:Smart Materials and Structures
Li, BLai, PTLi, GQZeng, SHHuang, MQ
2002
180
Showing results 53 to 72 of 362 < previous   next >