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Article: Effects of Ar+ back-surface gettering on the properties of flicker noise in n-channel nitrided MOSFETs

TitleEffects of Ar+ back-surface gettering on the properties of flicker noise in n-channel nitrided MOSFETs
Authors
Issue Date1996
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid-State Electronics, 1996, v. 39 n. 11, p. 1577-1580 How to Cite?
AbstractFlicker noise in back-surface gettered, nitrided n-channel metal-oxide-semiconductor field-effect transistors is characterized over a wide range of temperature and biases. The gettering was performed using a low-energy (550 eV) argon ion beam, and the gettering time ranged from 10 to 40 min. The noise power spectra for devices with different gettering times are compared to the ungettered devices which serve as the control. It is found that flicker noise is reduced by back-surface gettering for short gettering times. However, a rebound in the noise magnitude is observed for long gettering times. Investigation of the temperature dependences of the noise power spectra indicates that the low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO2 interface. Back-surface gettering results in the modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO2 interface. Copyright © 1996 Published by Elsevier Science Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/155042
ISSN
2015 Impact Factor: 1.345
2015 SCImago Journal Rankings: 0.675
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorSurya, Cen_US
dc.contributor.authorWang, Wen_US
dc.contributor.authorFong, WKen_US
dc.contributor.authorChan, CHen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2012-08-08T08:31:38Z-
dc.date.available2012-08-08T08:31:38Z-
dc.date.issued1996en_US
dc.identifier.citationSolid-State Electronics, 1996, v. 39 n. 11, p. 1577-1580en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/10722/155042-
dc.description.abstractFlicker noise in back-surface gettered, nitrided n-channel metal-oxide-semiconductor field-effect transistors is characterized over a wide range of temperature and biases. The gettering was performed using a low-energy (550 eV) argon ion beam, and the gettering time ranged from 10 to 40 min. The noise power spectra for devices with different gettering times are compared to the ungettered devices which serve as the control. It is found that flicker noise is reduced by back-surface gettering for short gettering times. However, a rebound in the noise magnitude is observed for long gettering times. Investigation of the temperature dependences of the noise power spectra indicates that the low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO2 interface. Back-surface gettering results in the modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO2 interface. Copyright © 1996 Published by Elsevier Science Ltd.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_US
dc.relation.ispartofSolid-State Electronicsen_US
dc.titleEffects of Ar+ back-surface gettering on the properties of flicker noise in n-channel nitrided MOSFETsen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/0038-1101(96)00069-Xen_US
dc.identifier.scopuseid_2-s2.0-0030285442en_US
dc.identifier.hkuros26215-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0030285442&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume39en_US
dc.identifier.issue11en_US
dc.identifier.spage1577en_US
dc.identifier.epage1580en_US
dc.identifier.isiWOS:A1996VV10600007-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridSurya, C=7003939256en_US
dc.identifier.scopusauthoridWang, W=7501758811en_US
dc.identifier.scopusauthoridFong, WK=7102815889en_US
dc.identifier.scopusauthoridChan, CH=36984588600en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US

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