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Article: Effects of ceramic-film thickness on humidity sensitivity of Al/Ba1-xLaxNbyTi1-yO3/SiO 2/Si structure

TitleEffects of ceramic-film thickness on humidity sensitivity of Al/Ba1-xLaxNbyTi1-yO3/SiO 2/Si structure
Authors
Issue Date2002
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sms
Citation
Smart Materials And Structures, 2002, v. 11 n. 4, p. 504-508 How to Cite?
AbstractUsing the argon ion-beam sputtering technique, 0.5, 1 or 2 μm of Ba1-xLaxNbyTi1-yO3 (x = 0.25%, y = 0.25%) film was deposited on a SiO2/Si substrate to make metal-insulator-semiconductor capacitors. The dependence of the humidity sensitivity of the device on the film thickness was studied. The sensor with the 0.5 μm film was nine times more sensitive than that with the 2 μm film. The results are explained by the porosity and pore-volume distribution of the films, which were extracted from the device capacitance at different relative humidities based on a physical model. The thinner the thin film, the higher was the porosity, and thus the higher was the sensitivity of the device to humidity. Compared with the porosity, the pore-volume distribution hardly affected the humidity sensitivity because the fractions of pores with radii smaller than 50 Å were almost the same (∼70%) for the three film thicknesses.
Persistent Identifierhttp://hdl.handle.net/10722/155168
ISSN
2015 Impact Factor: 2.769
2015 SCImago Journal Rankings: 1.171
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLi, Ben_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorLi, GQen_US
dc.contributor.authorZeng, SHen_US
dc.contributor.authorHuang, MQen_US
dc.date.accessioned2012-08-08T08:32:09Z-
dc.date.available2012-08-08T08:32:09Z-
dc.date.issued2002en_US
dc.identifier.citationSmart Materials And Structures, 2002, v. 11 n. 4, p. 504-508en_US
dc.identifier.issn0964-1726en_US
dc.identifier.urihttp://hdl.handle.net/10722/155168-
dc.description.abstractUsing the argon ion-beam sputtering technique, 0.5, 1 or 2 μm of Ba1-xLaxNbyTi1-yO3 (x = 0.25%, y = 0.25%) film was deposited on a SiO2/Si substrate to make metal-insulator-semiconductor capacitors. The dependence of the humidity sensitivity of the device on the film thickness was studied. The sensor with the 0.5 μm film was nine times more sensitive than that with the 2 μm film. The results are explained by the porosity and pore-volume distribution of the films, which were extracted from the device capacitance at different relative humidities based on a physical model. The thinner the thin film, the higher was the porosity, and thus the higher was the sensitivity of the device to humidity. Compared with the porosity, the pore-volume distribution hardly affected the humidity sensitivity because the fractions of pores with radii smaller than 50 Å were almost the same (∼70%) for the three film thicknesses.en_US
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/smsen_US
dc.relation.ispartofSmart Materials and Structuresen_US
dc.titleEffects of ceramic-film thickness on humidity sensitivity of Al/Ba1-xLaxNbyTi1-yO3/SiO 2/Si structureen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1088/0964-1726/11/4/304en_US
dc.identifier.scopuseid_2-s2.0-0036672322en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0036672322&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume11en_US
dc.identifier.issue4en_US
dc.identifier.spage504en_US
dc.identifier.epage508en_US
dc.identifier.isiWOS:000178083000004-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridLi, B=26643217800en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridLi, GQ=7407050307en_US
dc.identifier.scopusauthoridZeng, SH=7202412592en_US
dc.identifier.scopusauthoridHuang, MQ=7404259759en_US

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