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Article: Effect of indium content on performance and reliability of InGaN/GaN light-emitting diodes

TitleEffect of indium content on performance and reliability of InGaN/GaN light-emitting diodes
Authors
Keywords1/f noise
Current voltage
Defect concentrations
Device performance
Emission wavelength
Issue Date2009
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2009, v. 106 n. 9 How to Cite?
AbstractWhile longer wavelength emission from InGaN/GaN light-emitting diodes (LEDs) can be achieved by increasing the indium (In) content in the quantum wells, the increased In content gives rise to side effects to the material and device performance and reliability. It was found that the induced strain in the wafer and the density of threading dislocations increase with increasing In content. From current-voltage and 1/f noise measurements, it was observed that the leakage currents, static resistance, and noise magnitudes rise monotonically with increasing emission wavelength (In composition), which can be attributed to higher defect concentrations. After undergoing a 1000 h reliability test, it was discovered that the optical degradation rates for the longer wavelength green LEDs were significantly higher than those of shorter wavelength. © 2009 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/124726
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLi, ZLen_HK
dc.contributor.authorTripathy, Sen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorChoi, HWen_HK
dc.date.accessioned2010-10-31T10:50:39Z-
dc.date.available2010-10-31T10:50:39Z-
dc.date.issued2009en_HK
dc.identifier.citationJournal Of Applied Physics, 2009, v. 106 n. 9en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/124726-
dc.description.abstractWhile longer wavelength emission from InGaN/GaN light-emitting diodes (LEDs) can be achieved by increasing the indium (In) content in the quantum wells, the increased In content gives rise to side effects to the material and device performance and reliability. It was found that the induced strain in the wafer and the density of threading dislocations increase with increasing In content. From current-voltage and 1/f noise measurements, it was observed that the leakage currents, static resistance, and noise magnitudes rise monotonically with increasing emission wavelength (In composition), which can be attributed to higher defect concentrations. After undergoing a 1000 h reliability test, it was discovered that the optical degradation rates for the longer wavelength green LEDs were significantly higher than those of shorter wavelength. © 2009 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.-
dc.rightsCopyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2009, v. 106 n. 9 article no. 094507 and may be found athttp://jap.aip.org/resource/1/japiau/v106/i9/p094507_s1-
dc.subject1/f noise-
dc.subjectCurrent voltage-
dc.subjectDefect concentrations-
dc.subjectDevice performance-
dc.subjectEmission wavelength-
dc.titleEffect of indium content on performance and reliability of InGaN/GaN light-emitting diodesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=106 &issue=9 article no. 094507&spage=&epage=&date=2009&atitle=Effect+of+indium+content+on+performance+and+reliability+of+InGaN/GaN+light-emitting+diodesen_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3253754en_HK
dc.identifier.scopuseid_2-s2.0-70450273082en_HK
dc.identifier.hkuros175236en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-70450273082&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume106en_HK
dc.identifier.issue9en_HK
dc.identifier.isiWOS:000272555700100-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLi, ZL=34167922900en_HK
dc.identifier.scopusauthoridTripathy, S=8698106400en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK

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