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Article: Effects of annealing conditions on humidity-sensing characteristics of SrNbxTi1-xO3 thin-film resistor on SiO 2/Si substrate

TitleEffects of annealing conditions on humidity-sensing characteristics of SrNbxTi1-xO3 thin-film resistor on SiO 2/Si substrate
Authors
KeywordsAnnealing
Humidity Sensitivity
Srnbxti1-Xo3 Thin Film
Issue Date2003
PublisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/sna
Citation
Sensors And Actuators, A: Physical, 2003, v. 109 n. 1-2, p. 95-101 How to Cite?
AbstractStrontium titanate-niobate (SrNbxTi1-xO3) film deposited on SiO2/Si substrate by argon ion-beam sputtering technique is used to fabricate thin-film resistors by standard integrated-circuit technology. Effects of annealing conditions on their humidity-sensing characteristics were studied. Four cases were considered: 400 °C 20 min in N2; 400 °C 20 min, 400 °C 4 h and 600 °C 4h in O2. Experimental results showed that, as compared to the N2-annealed device, the O2-annealed devices have higher humidity sensitivity and faster response. Based on scanning electron microscope (SEM) study and adsorption-isotherm analysis, it can be concluded that oxygen annealing is helpful for grain growth, thus resulting in a higher porosity of the film. Among the four cases, 400 °C 4h in O2 is the best annealing condition, which gives rise to the highest porosity and an appropriate pore-volume distribution for improving the humidity sensitivity. © 2003 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/155240
ISSN
2015 Impact Factor: 2.201
2015 SCImago Journal Rankings: 0.902
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLi, GQen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorLi, Ben_US
dc.contributor.authorHuang, MQen_US
dc.contributor.authorZeng, SHen_US
dc.contributor.authorLiu, YRen_US
dc.date.accessioned2012-08-08T08:32:30Z-
dc.date.available2012-08-08T08:32:30Z-
dc.date.issued2003en_US
dc.identifier.citationSensors And Actuators, A: Physical, 2003, v. 109 n. 1-2, p. 95-101en_US
dc.identifier.issn0924-4247en_US
dc.identifier.urihttp://hdl.handle.net/10722/155240-
dc.description.abstractStrontium titanate-niobate (SrNbxTi1-xO3) film deposited on SiO2/Si substrate by argon ion-beam sputtering technique is used to fabricate thin-film resistors by standard integrated-circuit technology. Effects of annealing conditions on their humidity-sensing characteristics were studied. Four cases were considered: 400 °C 20 min in N2; 400 °C 20 min, 400 °C 4 h and 600 °C 4h in O2. Experimental results showed that, as compared to the N2-annealed device, the O2-annealed devices have higher humidity sensitivity and faster response. Based on scanning electron microscope (SEM) study and adsorption-isotherm analysis, it can be concluded that oxygen annealing is helpful for grain growth, thus resulting in a higher porosity of the film. Among the four cases, 400 °C 4h in O2 is the best annealing condition, which gives rise to the highest porosity and an appropriate pore-volume distribution for improving the humidity sensitivity. © 2003 Elsevier B.V. All rights reserved.en_US
dc.languageengen_US
dc.publisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/snaen_US
dc.relation.ispartofSensors and Actuators, A: Physicalen_US
dc.subjectAnnealingen_US
dc.subjectHumidity Sensitivityen_US
dc.subjectSrnbxti1-Xo3 Thin Filmen_US
dc.titleEffects of annealing conditions on humidity-sensing characteristics of SrNbxTi1-xO3 thin-film resistor on SiO 2/Si substrateen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.sna.2003.09.019en_US
dc.identifier.scopuseid_2-s2.0-0942288920en_US
dc.identifier.hkuros90665-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0942288920&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume109en_US
dc.identifier.issue1-2en_US
dc.identifier.spage95en_US
dc.identifier.epage101en_US
dc.identifier.isiWOS:000187361000015-
dc.publisher.placeSwitzerlanden_US
dc.identifier.scopusauthoridLi, GQ=7407050307en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridLi, B=26643217800en_US
dc.identifier.scopusauthoridHuang, MQ=7404259759en_US
dc.identifier.scopusauthoridZeng, SH=7202412592en_US
dc.identifier.scopusauthoridLiu, YR=36062331200en_US

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