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Article: Effects of annealing conditions on photoelectrical properties of Ba1-xSrxNbyTi1-yO3 thin-film resistor

TitleEffects of annealing conditions on photoelectrical properties of Ba1-xSrxNbyTi1-yO3 thin-film resistor
Authors
Issue Date2006
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sms
Citation
Smart Materials and Structures, 2006, v. 15 n. 1, p. N23-N27 How to Cite?
AbstractThe optical characteristics of barium-strontium titanate-niobate (Ba 1-xSrxNbyTi1-yO3) thin-film resistor are investigated and the effects of annealing gas and annealing temperature on photoelectrical properties are studied. Experimental results show that Ba1-xSrxNbyTi 1-yO3 thin films are highly sensitive not only to visible light, but also to ultraviolet light. As compared to N2-annealed devices, O2-annealed devices have higher photosensitivity and lower dark current. Moreover, the photosensitivity of the O2-annealed devices is reduced for higher annealing temperature. Based on scanning electron microscope (SEM) study and grain-boundary theory, it can be concluded that 400 °C in O2 is the optimal annealing condition, which can give a photosensitivity as high as 8400% to visible light and 5500% to ultraviolet light. © 2006 IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/155312
ISSN
2015 Impact Factor: 2.769
2015 SCImago Journal Rankings: 1.171
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLi, Ben_US
dc.contributor.authorLo, HBen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorLiu, YRen_US
dc.contributor.authorLi, GQen_US
dc.contributor.authorHuang, MQen_US
dc.date.accessioned2012-08-08T08:32:50Z-
dc.date.available2012-08-08T08:32:50Z-
dc.date.issued2006en_US
dc.identifier.citationSmart Materials and Structures, 2006, v. 15 n. 1, p. N23-N27en_US
dc.identifier.issn0964-1726en_US
dc.identifier.urihttp://hdl.handle.net/10722/155312-
dc.description.abstractThe optical characteristics of barium-strontium titanate-niobate (Ba 1-xSrxNbyTi1-yO3) thin-film resistor are investigated and the effects of annealing gas and annealing temperature on photoelectrical properties are studied. Experimental results show that Ba1-xSrxNbyTi 1-yO3 thin films are highly sensitive not only to visible light, but also to ultraviolet light. As compared to N2-annealed devices, O2-annealed devices have higher photosensitivity and lower dark current. Moreover, the photosensitivity of the O2-annealed devices is reduced for higher annealing temperature. Based on scanning electron microscope (SEM) study and grain-boundary theory, it can be concluded that 400 °C in O2 is the optimal annealing condition, which can give a photosensitivity as high as 8400% to visible light and 5500% to ultraviolet light. © 2006 IOP Publishing Ltd.en_US
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/smsen_US
dc.relation.ispartofSmart Materials and Structuresen_US
dc.titleEffects of annealing conditions on photoelectrical properties of Ba1-xSrxNbyTi1-yO3 thin-film resistoren_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1088/0964-1726/15/1/N05en_US
dc.identifier.scopuseid_2-s2.0-31144473424en_US
dc.identifier.hkuros120763-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-31144473424&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume15en_US
dc.identifier.issue1en_US
dc.identifier.spageN23en_US
dc.identifier.epageN27en_US
dc.identifier.isiWOS:000235313500057-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridLi, B=26643217800en_US
dc.identifier.scopusauthoridLo, HB=7202085394en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridLiu, YR=36062331200en_US
dc.identifier.scopusauthoridLi, GQ=7407050307en_US
dc.identifier.scopusauthoridHuang, MQ=7404259759en_US

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