Results 1 to 15 of 15
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TypeTitleAuthor(s)YearViews
A model for GaN 'ghost' islandsXie, MH; Zheng, LX; Dai, XQ; Wu, HS; Tong, SY2004117
 
Direct observation of a Ga adlayer on a GaN(0001) surface by LEED Patterson inversionXu, SH; Wu, H; Dai, XQ; Lau, WP; Zheng, LX; Xie, MH; Tong, SY2003402
 
Evidence for a Type-II band alignment between cubic and hexagonal phases of GaNLu, XH; Yu, PY; Zheng, LX; Xu, SJ; Xie, MH; Tong, SY2003366
 
Growth and structural properties of GaN films on flat and vicinal SiC(0001) substratesXie, MH; Cheung, SH; Zheng, LX; Tong, SY; Zhang, BS; Yang, H2002146
 
Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayersXu, SJ; Zheng, LX; Cheung, SH; Xie, MH; Tong, SY; Yang, H2002425
 
Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxyZheng, LX; Xie, MH; Xu, SJ; Cheung, SH; Tong, SY2001140
 
Defect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase EpitaxyXu, SJ; Or, CT; Li, Q; Zheng, LX; Xie, MH; Tong, Y; Yang, H2001150
 
Initial stage of GaN growth and its implication to defect formation in filmsCheung, SH; Zheng, LX; Xie, MH; Tong, SY; Ohtani, N2001330
 
Reflection high-energy electron diffraction intensity oscillations during growth of GaN(0001)A by plasma-assisted molecular beam epitaxySeutter, SM; Xie, MH; Zhu, WK; Zheng, LX; Wu, HS; Tong, SY2000143
 
Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxyXie, MH; Zheng, LX; Cheung, SH; Ng, YF; Wu, H; Tong, SY; Ohtani, N2000363
 
Step bunching of vicinal GaN(0001) surfaces during molecular beam epitaxyXie, MH; Cheung, SH; Zheng, LX; Ng, YF; Wu, H; Ohtani, N; Tong, SY2000342
 
Adsorption and desorption kinetics of gallium atoms on 6H-SiC(0001) surfacesZheng, LX; Xie, MH; Tong, SY2000374
 
Observation of 'ghost' islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxyZheng, LX; Xie, MH; Seutter, SM; Cheung, SH; Tong, SY2000393
 
Surface morphology of GaN: Flat versus vicinal surfacesXie, MH; Seutter, SM; Zheng, LX; Cheung, SH; Ng, YF; Wu, Huasheng; Tong, SY2000384
 
Anisotropic step-flow growth and island growth of GaN(0001) by molecular beam epitaxyXie, MH; Seutter, SM; Zhu, WK; Zheng, LX; Wu, H; Tong, SY1999404
 
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