| Title | Author(s) | Year | View Count |
 | A model for GaN 'ghost' islands | Xie, MH; Zheng, LX; Dai, XQ; Wu, HS; Tong, SY | 2004 | 128 |
 | Direct observation of a Ga adlayer on a GaN(0001) surface by LEED Patterson inversion | Xu, SH; Wu, H; Dai, XQ; Lau, WP; Zheng, LX; Xie, MH; Tong, SY | 2003 | 403 |
| Evidence for a Type-II band alignment between cubic and hexagonal phases of GaN | Lu, XH; Yu, PY; Zheng, LX; Xu, SJ; Xie, MH; Tong, SY | 2003 | 353 |
| Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates | Xie, MH; Cheung, SH; Zheng, LX; Tong, SY; Zhang, BS; Yang, H | 2002 | 144 |
| Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers | Xu, SJ; Zheng, LX; Cheung, SH; Xie, MH; Tong, SY; Yang, H | 2002 | 440 |
| Defect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy | Xu, SJ; Or, CT; Li, Q; Zheng, LX; Xie, MH; Tong, Y; Yang, H | 2001 | 154 |
| Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy | Zheng, LX; Xie, MH; Xu, SJ; Cheung, SH; Tong, SY | 2001 | 139 |
| Initial stage of GaN growth and its implication to defect formation in films | Cheung, SH; Zheng, LX; Xie, MH; Tong, SY; Ohtani, N | 2001 | 335 |
| Reflection high-energy electron diffraction intensity oscillations during growth of GaN(0001)A by plasma-assisted molecular beam epitaxy | Seutter, SM; Xie, MH; Zhu, WK; Zheng, LX; Wu, HS; Tong, SY | 2000 | 135 |
| Observation of 'ghost' islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy | Zheng, LX; Xie, MH; Seutter, SM; Cheung, SH; Tong, SY | 2000 | 414 |
| Adsorption and desorption kinetics of gallium atoms on 6H-SiC(0001) surfaces | Zheng, LX; Xie, MH; Tong, SY | 2000 | 384 |
| Step bunching of vicinal GaN(0001) surfaces during molecular beam epitaxy | Xie, MH; Cheung, SH; Zheng, LX; Ng, YF; Wu, H; Ohtani, N; Tong, SY | 2000 | 331 |
| Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy | Xie, MH; Zheng, LX; Cheung, SH; Ng, YF; Wu, H; Tong, SY; Ohtani, N | 2000 | 356 |
| Surface morphology of GaN: Flat versus vicinal surfaces | Xie, MH; Seutter, SM; Zheng, LX; Cheung, SH; Ng, YF; Wu, Huasheng; Tong, SY | 2000 | 366 |
| Anisotropic step-flow growth and island growth of GaN(0001) by molecular beam epitaxy | Xie, MH; Seutter, SM; Zhu, WK; Zheng, LX; Wu, H; Tong, SY | 1999 | 371 |
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