Results 1 to 15 of 15
Page 1 of 1
TypeTitleAuthor(s)YearViews
A model for GaN 'ghost' islands
Journal:
Surface Science
Publisher:
Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/susc
Xie, MH; Zheng, LX; Dai, XQ; Wu, HS; Tong, SY2004145
 
Direct observation of a Ga adlayer on a GaN(0001) surface by LEED Patterson inversion
Journal:
Physical Review B - Condensed Matter and Materials Physics
Publisher:
American Physical Society. The Journal's web site is located at http://prb.aps.org/
Xu, SH; Wu, H; Dai, XQ; Lau, WP; Zheng, LX; Xie, MH; Tong, SY2003425
 
Evidence for a Type-II band alignment between cubic and hexagonal phases of GaN
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Lu, XH; Yu, PY; Zheng, LX; Xu, SJ; Xie, MH; Tong, SY2003414
 
Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates
Proceedings/Conference:
International Journal of Modern Physics B
Publisher:
World Scientific Publishing Co Pte Ltd. The Journal's web site is located at http://www.worldscinet.com/ijmpb/ijmpb.shtml
Xie, MH; Cheung, SH; Zheng, LX; Tong, SY; Zhang, BS; Yang, H2002161
 
Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Xu, SJ; Zheng, LX; Cheung, SH; Xie, MH; Tong, SY; Yang, H2002446
 
Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy
Proceedings/Conference:
Journal of Crystal Growth
Publisher:
Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro
Zheng, LX; Xie, MH; Xu, SJ; Cheung, SH; Tong, SY2001157
 
Defect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy
Journal:
Physica Status Solidi (A) Applied Research
Publisher:
Wiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.physica-status-solidi.com
Xu, SJ; Or, CT; Li, Q; Zheng, LX; Xie, MH; Tong, Y; Yang, H2001163
 
Initial stage of GaN growth and its implication to defect formation in films
Journal:
Physical Review B - Condensed Matter and Materials Physics
Publisher:
American Physical Society. The Journal's web site is located at http://prb.aps.org/
Cheung, SH; Zheng, LX; Xie, MH; Tong, SY; Ohtani, N2001346
 
Reflection high-energy electron diffraction intensity oscillations during growth of GaN(0001)A by plasma-assisted molecular beam epitaxy
Journal:
Surface Science
Publisher:
Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/susc
Seutter, SM; Xie, MH; Zhu, WK; Zheng, LX; Wu, HS; Tong, SY2000163
 
Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Xie, MH; Zheng, LX; Cheung, SH; Ng, YF; Wu, H; Tong, SY; Ohtani, N2000388
 
Step bunching of vicinal GaN(0001) surfaces during molecular beam epitaxy
Journal:
Physical Review B - Condensed Matter and Materials Physics
Publisher:
American Physical Society. The Journal's web site is located at http://prb.aps.org/
Xie, MH; Cheung, SH; Zheng, LX; Ng, YF; Wu, H; Ohtani, N; Tong, SY2000359
 
Adsorption and desorption kinetics of gallium atoms on 6H-SiC(0001) surfaces
Journal:
Physical Review B - Condensed Matter and Materials Physics
Publisher:
American Physical Society. The Journal's web site is located at http://prb.aps.org/
Zheng, LX; Xie, MH; Tong, SY2000394
 
Surface morphology of GaN: Flat versus vicinal surfaces
Proceedings/Conference:
Materials Research Society Symposium - Proceedings
Publisher:
Materials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Xie, MH; Seutter, SM; Zheng, LX; Cheung, SH; Ng, YF; Wu, Huasheng; Tong, SY2000409
 
Observation of 'ghost' islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy
Journal:
Physical Review Letters
Publisher:
American Physical Society. The Journal's web site is located at http://prl.aps.org
Zheng, LX; Xie, MH; Seutter, SM; Cheung, SH; Tong, SY2000432
 
Anisotropic step-flow growth and island growth of GaN(0001) by molecular beam epitaxy
Journal:
Physical Review Letters
Publisher:
American Physical Society. The Journal's web site is located at http://prl.aps.org
Xie, MH; Seutter, SM; Zhu, WK; Zheng, LX; Wu, H; Tong, SY1999445
 
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