File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy

TitleCurrent-induced migration of surface adatoms during GaN growth by molecular beam epitaxy
Authors
KeywordsA1. Surface processes
A3. Molecular beam epitaxy
B1. Nitrides
B2. Semiconducting gallium compounds
Issue Date2001
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro
Citation
Journal Of Crystal Growth, 2001, v. 227-228, p. 376-380 How to Cite?
AbstractThe influence of electric fields on surface migration of Gallium (Ga) and Nitrogen (N) adatoms is studied during GaN growth by molecular beam epitaxy (MBE). When a direct current (DC) is used to heat the sample, long distance migration of Ga adatoms and diffusion asymmetry of N adatoms at steps are observed. On the other hand, if an alternating current (AC) is used, no such preferential adatom migration is found. This effect is attributed to the effective positive charges of surface adatoms, representing an effect of electro-migration. The implications of such current-induced surface migration to GaN epitaxy are subsequently investigated. It is seen to firstly change the distribution of Ga adatoms on a growing surface, and thus make the growth to be Ga-limited at one side of the sample but N-limited at the other side. This leads to different optical qualities of the film and different morphologies of the surface. © 2001 Elsevier Science B.V.
Persistent Identifierhttp://hdl.handle.net/10722/80710
ISSN
2015 Impact Factor: 1.462
2015 SCImago Journal Rankings: 0.752
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorZheng, LXen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorCheung, SHen_HK
dc.contributor.authorTong, SYen_HK
dc.date.accessioned2010-09-06T08:09:26Z-
dc.date.available2010-09-06T08:09:26Z-
dc.date.issued2001en_HK
dc.identifier.citationJournal Of Crystal Growth, 2001, v. 227-228, p. 376-380en_HK
dc.identifier.issn0022-0248en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80710-
dc.description.abstractThe influence of electric fields on surface migration of Gallium (Ga) and Nitrogen (N) adatoms is studied during GaN growth by molecular beam epitaxy (MBE). When a direct current (DC) is used to heat the sample, long distance migration of Ga adatoms and diffusion asymmetry of N adatoms at steps are observed. On the other hand, if an alternating current (AC) is used, no such preferential adatom migration is found. This effect is attributed to the effective positive charges of surface adatoms, representing an effect of electro-migration. The implications of such current-induced surface migration to GaN epitaxy are subsequently investigated. It is seen to firstly change the distribution of Ga adatoms on a growing surface, and thus make the growth to be Ga-limited at one side of the sample but N-limited at the other side. This leads to different optical qualities of the film and different morphologies of the surface. © 2001 Elsevier Science B.V.en_HK
dc.languageengen_HK
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgroen_HK
dc.relation.ispartofJournal of Crystal Growthen_HK
dc.rightsJournal of Crystal Growth. Copyright © Elsevier BV.en_HK
dc.subjectA1. Surface processesen_HK
dc.subjectA3. Molecular beam epitaxyen_HK
dc.subjectB1. Nitridesen_HK
dc.subjectB2. Semiconducting gallium compoundsen_HK
dc.titleCurrent-induced migration of surface adatoms during GaN growth by molecular beam epitaxyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0022-0248&volume=227-228&spage=376&epage=380&date=2001&atitle=Current-Induced+Migration+of+Surface+Adatoms+During+GaN+Growth+by++Molecular+Beam+Epitaxyen_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/S0022-0248(01)00727-8en_HK
dc.identifier.scopuseid_2-s2.0-0035398060en_HK
dc.identifier.hkuros62288en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0035398060&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume227-228en_HK
dc.identifier.spage376en_HK
dc.identifier.epage380en_HK
dc.identifier.isiWOS:000169557600074-
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridZheng, LX=7403405881en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridCheung, SH=13310365400en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats