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Article: Reflection high-energy electron diffraction intensity oscillations during growth of GaN(0001)A by plasma-assisted molecular beam epitaxy

TitleReflection high-energy electron diffraction intensity oscillations during growth of GaN(0001)A by plasma-assisted molecular beam epitaxy
Authors
Issue Date2000
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/susc
Citation
Surface Science, 2000, v. 445 n. 2-3, p. L71-L75 How to Cite?
AbstractReflection high-energy electron diffraction (RHEED) intensity oscillations have been observed during radio-frequency plasma-assisted molecular beam epitaxy of GaN on its (0001)A face. The starting A (Ga) face was prepared by growing a micrometer-thick GaN layer directly on a low-index 6H-SiC(0001) substrate at 650°C. RHEED intensity oscillations are measured with substrate temperatures less than 550°C in both Ga-limited and N-limited growth conditions. In the N-limited condition, an initial transient high-frequency oscillation is observed before it reaches a steady-state frequency. If the Ga flux is subsequently stopped while keeping the N flux unchanged, a few extra oscillations are recorded. Scanning tunneling microscopy images of surfaces quenched during growth show triangular-shaped islands, verifying a two-dimensional growth mode. At substrate temperatures greater than 550°C, neither island nucleation nor intensity oscillation is observed, suggesting a step-flow growth mode.
Persistent Identifierhttp://hdl.handle.net/10722/80624
ISSN
2015 Impact Factor: 1.931
2015 SCImago Journal Rankings: 0.792
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorSeutter, SMen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorZhu, WKen_HK
dc.contributor.authorZheng, LXen_HK
dc.contributor.authorWu, HSen_HK
dc.contributor.authorTong, SYen_HK
dc.date.accessioned2010-09-06T08:08:30Z-
dc.date.available2010-09-06T08:08:30Z-
dc.date.issued2000en_HK
dc.identifier.citationSurface Science, 2000, v. 445 n. 2-3, p. L71-L75en_HK
dc.identifier.issn0039-6028en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80624-
dc.description.abstractReflection high-energy electron diffraction (RHEED) intensity oscillations have been observed during radio-frequency plasma-assisted molecular beam epitaxy of GaN on its (0001)A face. The starting A (Ga) face was prepared by growing a micrometer-thick GaN layer directly on a low-index 6H-SiC(0001) substrate at 650°C. RHEED intensity oscillations are measured with substrate temperatures less than 550°C in both Ga-limited and N-limited growth conditions. In the N-limited condition, an initial transient high-frequency oscillation is observed before it reaches a steady-state frequency. If the Ga flux is subsequently stopped while keeping the N flux unchanged, a few extra oscillations are recorded. Scanning tunneling microscopy images of surfaces quenched during growth show triangular-shaped islands, verifying a two-dimensional growth mode. At substrate temperatures greater than 550°C, neither island nucleation nor intensity oscillation is observed, suggesting a step-flow growth mode.en_HK
dc.languageengen_HK
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/suscen_HK
dc.relation.ispartofSurface Scienceen_HK
dc.titleReflection high-energy electron diffraction intensity oscillations during growth of GaN(0001)A by plasma-assisted molecular beam epitaxyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0218-625X&volume=445&spage=71&epage=75&date=2000&atitle=Reflection+High-Energy+Electron+Diffraction+Intensity+Oscillations+During+Growth+of+GaN(0001)A+by+Plasma-Assisted+Molecular+Beam+Epitaxyen_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.emailWu, HS: hswu@hkucc.hku.hken_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.identifier.authorityWu, HS=rp00813en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/S0039-6028(99)01163-2en_HK
dc.identifier.scopuseid_2-s2.0-0033874819en_HK
dc.identifier.hkuros50225en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0033874819&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume445en_HK
dc.identifier.issue2-3en_HK
dc.identifier.spageL71en_HK
dc.identifier.epageL75en_HK
dc.identifier.isiWOS:000085085500002-
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridSeutter, SM=6603424542en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridZhu, WK=7404232249en_HK
dc.identifier.scopusauthoridZheng, LX=7403405881en_HK
dc.identifier.scopusauthoridWu, HS=7405584367en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK

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