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Article: A model for GaN 'ghost' islands

TitleA model for GaN 'ghost' islands
Authors
Xie, MHZheng, LXDai, XQWu, HSTong, SY
KeywordsGallium nitride
Molecular beam epitaxy
Nucleation
Issue Date2004
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/susc
Citation
Surface Science, 2004, v. 558 n. 1-3, p. 195-200 How to Cite?
DOI: http://dx.doi.org/10.1016/j.susc.2004.04.003
AbstractDuring submonolayer deposition of GaN by molecular-beam epitaxy (MBE), novel 'ghost' islands are observed by scanning tunneling microscopy (STM). The island contrast depends on gap voltage of the STM, suggesting a different atomic structure of the islands than that of GaN terrace or normal islands. Formation of 'ghost' islands is related to the presence of excess gallium atoms on surface during MBE. Island size distribution show no peak but a monotonically decaying curve, indicating a surfactant mediated process for nucleation of such islands. A model is put forward explaining the origin and the structure of such islands. © 2004 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/80927
ISSN
0039-6028
2023 Impact Factor: 2.1
2023 SCImago Journal Rankings: 0.385
ISI Accession Number ID
WOS:000221728000019
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorXie, MHen_HK
dc.contributor.authorZheng, LXen_HK
dc.contributor.authorDai, XQen_HK
dc.contributor.authorWu, HSen_HK
dc.contributor.authorTong, SYen_HK
dc.date.accessioned2010-09-06T08:11:49Z-
dc.date.available2010-09-06T08:11:49Z-
dc.date.issued2004en_HK
dc.identifier.citationSurface Science, 2004, v. 558 n. 1-3, p. 195-200en_HK
dc.identifier.issn0039-6028en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80927-
dc.description.abstractDuring submonolayer deposition of GaN by molecular-beam epitaxy (MBE), novel 'ghost' islands are observed by scanning tunneling microscopy (STM). The island contrast depends on gap voltage of the STM, suggesting a different atomic structure of the islands than that of GaN terrace or normal islands. Formation of 'ghost' islands is related to the presence of excess gallium atoms on surface during MBE. Island size distribution show no peak but a monotonically decaying curve, indicating a surfactant mediated process for nucleation of such islands. A model is put forward explaining the origin and the structure of such islands. © 2004 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/suscen_HK
dc.relation.ispartofSurface Scienceen_HK
dc.rightsSurface Science. Copyright © Elsevier BV.en_HK
dc.subjectGallium nitrideen_HK
dc.subjectMolecular beam epitaxyen_HK
dc.subjectNucleationen_HK
dc.titleA model for GaN 'ghost' islandsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0039-6028&volume=558&spage=195&epage=200&date=2004&atitle=A+model+for+GaN+‘ghost’+islandsen_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.emailWu, HS: hswu@hkucc.hku.hken_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.identifier.authorityWu, HS=rp00813en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.susc.2004.04.003en_HK
dc.identifier.scopuseid_2-s2.0-2342501772en_HK
dc.identifier.hkuros88905en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-2342501772&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume558en_HK
dc.identifier.issue1-3en_HK
dc.identifier.spage195en_HK
dc.identifier.epage200en_HK
dc.identifier.isiWOS:000221728000019-
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridZheng, LX=7403405881en_HK
dc.identifier.scopusauthoridDai, XQ=55237280400en_HK
dc.identifier.scopusauthoridWu, HS=7405584367en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK
dc.identifier.issnl0039-6028-

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