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Article: Defect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy

TitleDefect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy
Authors
Issue Date2001
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.physica-status-solidi.com
Citation
Physica Status Solidi (A) Applied Research, 2001, v. 188 n. 2, p. 681-685 How to Cite?
AbstractDefect states in cubic GaN epilayers grown on GaAs were investigated with the photoluminescence technique. One shallow donor and two acceptors were identified to be involved in relevant optical transitions. The binding energies of the free excitons, the bound excitons, the donor and the acceptors were determined. These values are in good agreement with recent theoretical results.
Persistent Identifierhttp://hdl.handle.net/10722/80543
ISSN
2007 Impact Factor: 1.214
References

 

DC FieldValueLanguage
dc.contributor.authorXu, SJen_HK
dc.contributor.authorOr, CTen_HK
dc.contributor.authorLi, Qen_HK
dc.contributor.authorZheng, LXen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorTong, Yen_HK
dc.contributor.authorYang, Hen_HK
dc.date.accessioned2010-09-06T08:07:36Z-
dc.date.available2010-09-06T08:07:36Z-
dc.date.issued2001en_HK
dc.identifier.citationPhysica Status Solidi (A) Applied Research, 2001, v. 188 n. 2, p. 681-685en_HK
dc.identifier.issn0031-8965en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80543-
dc.description.abstractDefect states in cubic GaN epilayers grown on GaAs were investigated with the photoluminescence technique. One shallow donor and two acceptors were identified to be involved in relevant optical transitions. The binding energies of the free excitons, the bound excitons, the donor and the acceptors were determined. These values are in good agreement with recent theoretical results.en_HK
dc.languageengen_HK
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.physica-status-solidi.comen_HK
dc.relation.ispartofPhysica Status Solidi (A) Applied Researchen_HK
dc.titleDefect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1862-6300&volume=188&spage=681&epage=685&date=2001&atitle=Defect+states+in+cubic+GaN+epilayer+grown+on+GaAs+by+metalorganic+vapor+phase+epitaxyen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/1521-396X(200112)188:2<681::AID-PSSA681>3.0.CO;2-7en_HK
dc.identifier.scopuseid_2-s2.0-0012105938en_HK
dc.identifier.hkuros65105en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0012105938&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume188en_HK
dc.identifier.issue2en_HK
dc.identifier.spage681en_HK
dc.identifier.epage685en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridOr, CT=36897100600en_HK
dc.identifier.scopusauthoridLi, Q=7405861869en_HK
dc.identifier.scopusauthoridZheng, LX=7403405881en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridTong, Y=7202614753en_HK
dc.identifier.scopusauthoridYang, H=35493514000en_HK

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