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Conference Paper: Surface morphology of GaN: Flat versus vicinal surfaces

TitleSurface morphology of GaN: Flat versus vicinal surfaces
Authors
KeywordsPhysics engineering chemistry
Issue Date2000
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
The 1999 Materials Research Society Symposium Fall Meeting - Symposium W 'GaN and Related Alloys', Boston, MA, 28 November - 3 December 1999. In Mrs Internet Journal Of Nitride Semiconductor Research, 2000, v. 5 SUPPL. 1 How to Cite?
AbstractThe surface morphology of GaN films grown by molecular beam epitaxy (MBE) is investigated by scanning tunneling microscopy (STM). A comparison is made between flat and vicinal surfaces. The wurtzite structure of GaN leads to special morphological features such as step pairing and triangularly shaped islands. Spiral mounds due to growth at screw threading dislocations are dominant on flat surfaces, whereas for vicinal GaN, the surfaces show no spiral mound but evenly spaced steps. This observation suggests an effective suppression of screw threading dislocations in the vicinal films. This finding is confirmed by transmission electron microscopy (TEM) studies. Continued growth of the vicinal surface leads to step bunching that is attributed to the effect of electromigration.
Persistent Identifierhttp://hdl.handle.net/10722/47038
ISSN

 

DC FieldValueLanguage
dc.contributor.authorXie, MHen_HK
dc.contributor.authorSeutter, SMen_HK
dc.contributor.authorZheng, LXen_HK
dc.contributor.authorCheung, SHen_HK
dc.contributor.authorNg, YFen_HK
dc.contributor.authorWu, Huashengen_HK
dc.contributor.authorTong, SYen_HK
dc.date.accessioned2007-10-30T07:05:02Z-
dc.date.available2007-10-30T07:05:02Z-
dc.date.issued2000en_HK
dc.identifier.citationThe 1999 Materials Research Society Symposium Fall Meeting - Symposium W 'GaN and Related Alloys', Boston, MA, 28 November - 3 December 1999. In Mrs Internet Journal Of Nitride Semiconductor Research, 2000, v. 5 SUPPL. 1en_HK
dc.identifier.issn0272-9172en_HK
dc.identifier.urihttp://hdl.handle.net/10722/47038-
dc.description.abstractThe surface morphology of GaN films grown by molecular beam epitaxy (MBE) is investigated by scanning tunneling microscopy (STM). A comparison is made between flat and vicinal surfaces. The wurtzite structure of GaN leads to special morphological features such as step pairing and triangularly shaped islands. Spiral mounds due to growth at screw threading dislocations are dominant on flat surfaces, whereas for vicinal GaN, the surfaces show no spiral mound but evenly spaced steps. This observation suggests an effective suppression of screw threading dislocations in the vicinal films. This finding is confirmed by transmission electron microscopy (TEM) studies. Continued growth of the vicinal surface leads to step bunching that is attributed to the effect of electromigration.en_HK
dc.format.extent1282895 bytes-
dc.format.extent2467 bytes-
dc.format.extent4804 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_HK
dc.relation.ispartofMaterials Research Society Symposium - Proceedingsen_HK
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineering chemistryen_HK
dc.titleSurface morphology of GaN: Flat versus vicinal surfacesen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=595&spage=W3.29.1&epage=W3.29.6&date=2000&atitle=Surface+morphology+of+GaN:+flat+versus+vicinal+surfacesen_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.emailWu, Huasheng: hswu@hkucc.hku.hken_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.identifier.authorityWu, Huasheng=rp00813en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.scopuseid_2-s2.0-0033689485en_HK
dc.identifier.hkuros55920-
dc.identifier.volume595en_HK
dc.identifier.spageW3.29.1en_HK
dc.identifier.epageW3.29.6en_HK
dc.publisher.placeUnited Statesen_HK
dc.description.otherThe 1999 Materials Research Society Symposium Fall Meeting - Symposium W 'GaN and Related Alloys', Boston, MA, 28 November - 3 December 1999. In Mrs Internet Journal Of Nitride Semiconductor Research, 2000, v. 5 SUPPL. 1-
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridSeutter, SM=6603424542en_HK
dc.identifier.scopusauthoridZheng, LX=7403405881en_HK
dc.identifier.scopusauthoridCheung, SH=13310365400en_HK
dc.identifier.scopusauthoridNg, YF=7202471126en_HK
dc.identifier.scopusauthoridWu, Huasheng=7405584367en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK

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