| Title | Author(s) | Year | View Count |
 | Splitting water on metal oxide surfaces | Xu, H; Zhang, RQ; Ng, AMC; Djurišić, AB; Chan, HT; Chan, WK; Tong, SY | 2011 | 79 |
| Growth of triangular ZnO nanorods by electrodeposition | Chen, XY; Fang, F; Ng, AMC; Djurišić, AB; Tong, SY | 2010 | 561 |
| Surface modification of TiO 2 and ZnO nanosurfaces and applications | Tong, SY; Hu, X; Zhang, RQ; Fung, MK; Yip, CT; Ng, AMC; Fang, F; Djurišić, AB | 2010 | 40 |
| Multi-slice finite difference method for full potential calculation of low energy electron diffraction spectra | Wu, H; Wang, J; So, R; Tong, SY | 2007 | 153 |
| Origin of triangular island shape and double-step bunching during GaN growth by molecular-beam epitaxy under excess Ga conditions | Xie, MH; Gong, M; Pang, EKY; Wu, HS; Tong, SY | 2006 | 150 |
 | Transition between wurtzite and zinc-blende GaN: An effect of deposition condition of molecular-beam epitaxy | Shi, BM; Xie, MH; Wu, HS; Wang, N; Tong, SY | 2006 | 149 |
 | Observation of a (√3x√3)-R30o reconstruction on GaN(0001) by RHEED and LEED | Wang, J; So, WK; Liu, Y; Wu, HS; Xie, MH; Tong, SY | 2006 | 164 |
| Mass transport and alloying during InN growth on GaN by molecular-beam epitaxy | Liu, Y; Xie, MH; Wu, HS; Tong, SY | 2006 | 28 |
| Observation of a (√3 × √3)-R30° reconstruction on GaN(0 0 0 1) by RHEED and LEED | Wang, J; So, R; Liu, Y; Wu, H; Xie, MH; Tong, SY | 2006 | 32 |
| Ab initio study of indium quantum wire formation on flat and stepped Si(100) surfaces | Dai, XQI; WeiWei, JU; Xie, MH; Tong, SY | 2005 | 145 |
| Structure determination of indium-induced Si(111)-In-4x1 surface by LEED Patterson inversion | Wang, J; Wu, H; So, R; Liu, Y; Xie, MH; Tong, SY | 2005 | 142 |
| Origin of the 'S-shaped' temperature dependence of luminescent peaks from semiconductors | Li, Q; Xu, SJ; Xie, MH; Tong, SY | 2005 | 131 |
| In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy | Cao, YG; Xu, SH; Lü, W; Dai, XQ; Chan, YF; Wang, N; Liu, Y; Wu, HS; Xie, MH; Tong, SY | 2005 | 654 |
| Coherent and dislocated three-dimensional islands of Inx Ga1-x N self-assembled on GaN(0001) during molecular-beam epitaxy | Liu, Y; Cao, YG; Wu, HS; Xie, MH; Tong, SY | 2005 | 679 |
| A study of Inx Ga1-x N growth by reflection high-energy electron diffraction | Liu, Y; Xie, MH; Cao, YG; Wu, HS; Tong, SY | 2005 | 523 |
| Spectral features of LO phonon sidebands in luminescence of free excitons in GaN | Xu, SJ; Li, GQ; Xiong, SJ; Tong, SY; Che, CM; Liu, W; Li, MF | 2005 | 567 |
| A model for steady-state luminescence of localized-state ensemble | Li, Q; Xu, SJ; Xie, MH; Tong, SY | 2005 | 23 |
| Nitrogen Adatom Diffusion on a Ga-Rich GaN (0001) Surface | Dai, XQ; Wu, HS; Xie, MH; Xu, SH; Tong, SY | 2004 | 137 |
| Atomic design of polarity of GaN films grown on SiC(0001) | Dai, XQ; Wu, HS; Xu, SH; Xie, MH; Tong, SY | 2004 | 169 |
| A model for GaN 'ghost' islands | Xie, MH; Zheng, LX; Dai, XQ; Wu, HS; Tong, SY | 2004 | 128 |
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