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Article: Ab initio study of indium quantum wire formation on flat and stepped Si(100) surfaces

TitleAb initio study of indium quantum wire formation on flat and stepped Si(100) surfaces
Authors
KeywordsAb initio
Indium
Quantum wires
Silicon
Step
Issue Date2005
PublisherWorld Scientific Publishing Co Pte Ltd. The Journal's web site is located at http://www.worldscinet.com/srl/srl.shtml
Citation
Surface Review And Letters, 2005, v. 12 n. 4, p. 483-487 How to Cite?
AbstractUsing ab initio total energy calculations, we have studied the formation of indium (In) wires on flat and stepped Si(100)-(2×1) surfaces at low coverage. On flat Si(100), two possible orientations of In wires are examined: (i) the wire is perpendicular to the underlying Si dimer rows, and (ii) the wire is parallel to the underlying Si dimer rows. Total energy optimization shows that the energetically favored orientation is where the In wire is perpendicular to the underlying Si dimer rows, i.e. the wire is oriented along the [11̄0] direction. We have also considered two neighboring wires and determined the repulsive force between the two wires. On stepped Si(100) surfaces, the influence of S A and S B steps on In wire formation is investigated. The calculations suggest that In wires are likely to form at positions away from S A steps but close to S B steps. © World Scientific Publishing Company.
Persistent Identifierhttp://hdl.handle.net/10722/80787
ISSN
2015 Impact Factor: 0.435
2015 SCImago Journal Rankings: 0.156
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorDai, XQIen_HK
dc.contributor.authorWeiWei, JUen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorTong, SYen_HK
dc.date.accessioned2010-09-06T08:10:16Z-
dc.date.available2010-09-06T08:10:16Z-
dc.date.issued2005en_HK
dc.identifier.citationSurface Review And Letters, 2005, v. 12 n. 4, p. 483-487en_HK
dc.identifier.issn0218-625Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/80787-
dc.description.abstractUsing ab initio total energy calculations, we have studied the formation of indium (In) wires on flat and stepped Si(100)-(2×1) surfaces at low coverage. On flat Si(100), two possible orientations of In wires are examined: (i) the wire is perpendicular to the underlying Si dimer rows, and (ii) the wire is parallel to the underlying Si dimer rows. Total energy optimization shows that the energetically favored orientation is where the In wire is perpendicular to the underlying Si dimer rows, i.e. the wire is oriented along the [11̄0] direction. We have also considered two neighboring wires and determined the repulsive force between the two wires. On stepped Si(100) surfaces, the influence of S A and S B steps on In wire formation is investigated. The calculations suggest that In wires are likely to form at positions away from S A steps but close to S B steps. © World Scientific Publishing Company.en_HK
dc.languageengen_HK
dc.publisherWorld Scientific Publishing Co Pte Ltd. The Journal's web site is located at http://www.worldscinet.com/srl/srl.shtmlen_HK
dc.relation.ispartofSurface Review and Lettersen_HK
dc.subjectAb initioen_HK
dc.subjectIndiumen_HK
dc.subjectQuantum wiresen_HK
dc.subjectSiliconen_HK
dc.subjectStepen_HK
dc.titleAb initio study of indium quantum wire formation on flat and stepped Si(100) surfacesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0218-625X&volume=12&spage=483&epage=487&date=2005&atitle=Ab+initio+study+of+indium+quantum+wire+formation+on+flat+and+stepped+Si(100)+surfacesen_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1142/S0218625X0500730Xen_HK
dc.identifier.scopuseid_2-s2.0-27744608428en_HK
dc.identifier.hkuros113701en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-27744608428&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume12en_HK
dc.identifier.issue4en_HK
dc.identifier.spage483en_HK
dc.identifier.epage487en_HK
dc.identifier.isiWOS:000234149400001-
dc.publisher.placeSingaporeen_HK
dc.identifier.scopusauthoridDai, XQI=36886739300en_HK
dc.identifier.scopusauthoridWeiWei, JU=9244384300en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK

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