File Download
There are no files associated with this item.
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1142/S0218625X0500730X
- Scopus: eid_2-s2.0-27744608428
- WOS: WOS:000234149400001
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: Ab initio study of indium quantum wire formation on flat and stepped Si(100) surfaces
Title | Ab initio study of indium quantum wire formation on flat and stepped Si(100) surfaces |
---|---|
Authors | |
Keywords | Ab initio Indium Quantum wires Silicon Step |
Issue Date | 2005 |
Publisher | World Scientific Publishing Co Pte Ltd. The Journal's web site is located at http://www.worldscinet.com/srl/srl.shtml |
Citation | Surface Review And Letters, 2005, v. 12 n. 4, p. 483-487 How to Cite? |
Abstract | Using ab initio total energy calculations, we have studied the formation of indium (In) wires on flat and stepped Si(100)-(2×1) surfaces at low coverage. On flat Si(100), two possible orientations of In wires are examined: (i) the wire is perpendicular to the underlying Si dimer rows, and (ii) the wire is parallel to the underlying Si dimer rows. Total energy optimization shows that the energetically favored orientation is where the In wire is perpendicular to the underlying Si dimer rows, i.e. the wire is oriented along the [11̄0] direction. We have also considered two neighboring wires and determined the repulsive force between the two wires. On stepped Si(100) surfaces, the influence of S A and S B steps on In wire formation is investigated. The calculations suggest that In wires are likely to form at positions away from S A steps but close to S B steps. © World Scientific Publishing Company. |
Persistent Identifier | http://hdl.handle.net/10722/80787 |
ISSN | 2023 Impact Factor: 1.2 2023 SCImago Journal Rankings: 0.226 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Dai, XQI | en_HK |
dc.contributor.author | WeiWei, JU | en_HK |
dc.contributor.author | Xie, MH | en_HK |
dc.contributor.author | Tong, SY | en_HK |
dc.date.accessioned | 2010-09-06T08:10:16Z | - |
dc.date.available | 2010-09-06T08:10:16Z | - |
dc.date.issued | 2005 | en_HK |
dc.identifier.citation | Surface Review And Letters, 2005, v. 12 n. 4, p. 483-487 | en_HK |
dc.identifier.issn | 0218-625X | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/80787 | - |
dc.description.abstract | Using ab initio total energy calculations, we have studied the formation of indium (In) wires on flat and stepped Si(100)-(2×1) surfaces at low coverage. On flat Si(100), two possible orientations of In wires are examined: (i) the wire is perpendicular to the underlying Si dimer rows, and (ii) the wire is parallel to the underlying Si dimer rows. Total energy optimization shows that the energetically favored orientation is where the In wire is perpendicular to the underlying Si dimer rows, i.e. the wire is oriented along the [11̄0] direction. We have also considered two neighboring wires and determined the repulsive force between the two wires. On stepped Si(100) surfaces, the influence of S A and S B steps on In wire formation is investigated. The calculations suggest that In wires are likely to form at positions away from S A steps but close to S B steps. © World Scientific Publishing Company. | en_HK |
dc.language | eng | en_HK |
dc.publisher | World Scientific Publishing Co Pte Ltd. The Journal's web site is located at http://www.worldscinet.com/srl/srl.shtml | en_HK |
dc.relation.ispartof | Surface Review and Letters | en_HK |
dc.subject | Ab initio | en_HK |
dc.subject | Indium | en_HK |
dc.subject | Quantum wires | en_HK |
dc.subject | Silicon | en_HK |
dc.subject | Step | en_HK |
dc.title | Ab initio study of indium quantum wire formation on flat and stepped Si(100) surfaces | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0218-625X&volume=12&spage=483&epage=487&date=2005&atitle=Ab+initio+study+of+indium+quantum+wire+formation+on+flat+and+stepped+Si(100)+surfaces | en_HK |
dc.identifier.email | Xie, MH: mhxie@hku.hk | en_HK |
dc.identifier.authority | Xie, MH=rp00818 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1142/S0218625X0500730X | en_HK |
dc.identifier.scopus | eid_2-s2.0-27744608428 | en_HK |
dc.identifier.hkuros | 113701 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-27744608428&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 12 | en_HK |
dc.identifier.issue | 4 | en_HK |
dc.identifier.spage | 483 | en_HK |
dc.identifier.epage | 487 | en_HK |
dc.identifier.isi | WOS:000234149400001 | - |
dc.publisher.place | Singapore | en_HK |
dc.identifier.scopusauthorid | Dai, XQI=36886739300 | en_HK |
dc.identifier.scopusauthorid | WeiWei, JU=9244384300 | en_HK |
dc.identifier.scopusauthorid | Xie, MH=7202255416 | en_HK |
dc.identifier.scopusauthorid | Tong, SY=24512624800 | en_HK |
dc.identifier.issnl | 0218-625X | - |