Article: Atomic design of polarity of GaN films grown on SiC(0001)

File Download Links for fulltext
(May Require Subscription)
Supplementary
  • Basic View
  • Metadata View
  • XML View
TitleAtomic design of polarity of GaN films grown on SiC(0001)
AuthorsDai, XQ1 3
Wu, HS1
Xu, SH1
Xie, MH1
Tong, SY2
KeywordsAdlayer
Interface
Polarity
Total energy calculation
Issue Date2004
PublisherChinese Academy of Sciences, Institute of Theoretical Physics. The Journal's web site is located at http://ctp.itp.cn
CitationCommunications In Theoretical Physics, 2004, v. 41 n. 4, p. 609-613 [How to Cite?]
AbstractAb initio total energy calculations are used to determine the interface structure of GaN films grown on 6H-SiC(0001) with different substrate reconstructions. The results indicate that GaN films grown on bare SiC(0001) are of the Ga-polarity, while GaN films grown on SiC(0001) with Si adlayer are of the N-polarity if there is no N-Si interchange at the interface. With the interchange, the GaN films are of the Ga-polarity.
ISSN0253-6102
2011 Impact Factor: 0.747
2011 SCImago Journal Rankings: 0.047
ReferencesReferences in Scopus
DC Field
Value
dc.contributor.authorDai, XQ
dc.contributor.authorWu, HS
dc.contributor.authorXu, SH
dc.contributor.authorXie, MH
dc.contributor.authorTong, SY
dc.date.accessioned2010-09-06T08:08:36Z
dc.date.available2010-09-06T08:08:36Z
dc.date.issued2004
dc.description.abstractAb initio total energy calculations are used to determine the interface structure of GaN films grown on 6H-SiC(0001) with different substrate reconstructions. The results indicate that GaN films grown on bare SiC(0001) are of the Ga-polarity, while GaN films grown on SiC(0001) with Si adlayer are of the N-polarity if there is no N-Si interchange at the interface. With the interchange, the GaN films are of the Ga-polarity.
dc.description.natureLink_to_subscribed_fulltext
dc.identifier.citationCommunications In Theoretical Physics, 2004, v. 41 n. 4, p. 609-613 [How to Cite?]
dc.identifier.epage613
dc.identifier.hkuros92630
dc.identifier.issn0253-6102
2011 Impact Factor: 0.747
2011 SCImago Journal Rankings: 0.047
dc.identifier.issue4
dc.identifier.openurl
dc.identifier.scopuseid_2-s2.0-2442536835
dc.identifier.spage609
dc.identifier.urihttp://hdl.handle.net/10722/80633
dc.identifier.volume41
dc.languageeng
dc.publisherChinese Academy of Sciences, Institute of Theoretical Physics. The Journal's web site is located at http://ctp.itp.cn
dc.publisher.placeChina
dc.relation.ispartofCommunications in Theoretical Physics
dc.relation.referencesReferences in Scopus
dc.subjectAdlayer
dc.subjectInterface
dc.subjectPolarity
dc.subjectTotal energy calculation
dc.titleAtomic design of polarity of GaN films grown on SiC(0001)
dc.typeArticle
Author Affiliations
  1. The University of Hong Kong
  2. City University of Hong Kong
  3. Henan Normal University