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Article: Atomic design of polarity of GaN films grown on SiC(0001)
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TitleAtomic design of polarity of GaN films grown on SiC(0001)
 
AuthorsDai, XQ1 3
Wu, HS1
Xu, SH1
Xie, MH1
Tong, SY2
 
KeywordsAdlayer
Interface
Polarity
Total energy calculation
 
Issue Date2004
 
PublisherChinese Academy of Sciences, Institute of Theoretical Physics. The Journal's web site is located at http://ctp.itp.cn
 
CitationCommunications In Theoretical Physics, 2004, v. 41 n. 4, p. 609-613 [How to Cite?]
 
AbstractAb initio total energy calculations are used to determine the interface structure of GaN films grown on 6H-SiC(0001) with different substrate reconstructions. The results indicate that GaN films grown on bare SiC(0001) are of the Ga-polarity, while GaN films grown on SiC(0001) with Si adlayer are of the N-polarity if there is no N-Si interchange at the interface. With the interchange, the GaN films are of the Ga-polarity.
 
ISSN0253-6102
2013 Impact Factor: 1.049
2013 SCImago Journal Rankings: 0.464
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorDai, XQ
 
dc.contributor.authorWu, HS
 
dc.contributor.authorXu, SH
 
dc.contributor.authorXie, MH
 
dc.contributor.authorTong, SY
 
dc.date.accessioned2010-09-06T08:08:36Z
 
dc.date.available2010-09-06T08:08:36Z
 
dc.date.issued2004
 
dc.description.abstractAb initio total energy calculations are used to determine the interface structure of GaN films grown on 6H-SiC(0001) with different substrate reconstructions. The results indicate that GaN films grown on bare SiC(0001) are of the Ga-polarity, while GaN films grown on SiC(0001) with Si adlayer are of the N-polarity if there is no N-Si interchange at the interface. With the interchange, the GaN films are of the Ga-polarity.
 
dc.description.naturelink_to_subscribed_fulltext
 
dc.identifier.citationCommunications In Theoretical Physics, 2004, v. 41 n. 4, p. 609-613 [How to Cite?]
 
dc.identifier.epage613
 
dc.identifier.hkuros92630
 
dc.identifier.issn0253-6102
2013 Impact Factor: 1.049
2013 SCImago Journal Rankings: 0.464
 
dc.identifier.issue4
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-2442536835
 
dc.identifier.spage609
 
dc.identifier.urihttp://hdl.handle.net/10722/80633
 
dc.identifier.volume41
 
dc.languageeng
 
dc.publisherChinese Academy of Sciences, Institute of Theoretical Physics. The Journal's web site is located at http://ctp.itp.cn
 
dc.publisher.placeChina
 
dc.relation.ispartofCommunications in Theoretical Physics
 
dc.relation.referencesReferences in Scopus
 
dc.subjectAdlayer
 
dc.subjectInterface
 
dc.subjectPolarity
 
dc.subjectTotal energy calculation
 
dc.titleAtomic design of polarity of GaN films grown on SiC(0001)
 
dc.typeArticle
 
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<contributor.author>Xu, SH</contributor.author>
<contributor.author>Xie, MH</contributor.author>
<contributor.author>Tong, SY</contributor.author>
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Author Affiliations
  1. The University of Hong Kong
  2. City University of Hong Kong
  3. Henan Normal University