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Article: Atomic design of polarity of GaN films grown on SiC(0001)
Title | Atomic design of polarity of GaN films grown on SiC(0001) |
---|---|
Authors | |
Keywords | Adlayer Interface Polarity Total energy calculation |
Issue Date | 2004 |
Publisher | Chinese Academy of Sciences, Institute of Theoretical Physics. The Journal's web site is located at http://ctp.itp.cn |
Citation | Communications In Theoretical Physics, 2004, v. 41 n. 4, p. 609-613 How to Cite? |
Abstract | Ab initio total energy calculations are used to determine the interface structure of GaN films grown on 6H-SiC(0001) with different substrate reconstructions. The results indicate that GaN films grown on bare SiC(0001) are of the Ga-polarity, while GaN films grown on SiC(0001) with Si adlayer are of the N-polarity if there is no N-Si interchange at the interface. With the interchange, the GaN films are of the Ga-polarity. |
Persistent Identifier | http://hdl.handle.net/10722/80633 |
ISSN | 2023 Impact Factor: 2.4 2023 SCImago Journal Rankings: 0.470 |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Dai, XQ | en_HK |
dc.contributor.author | Wu, HS | en_HK |
dc.contributor.author | Xu, SH | en_HK |
dc.contributor.author | Xie, MH | en_HK |
dc.contributor.author | Tong, SY | en_HK |
dc.date.accessioned | 2010-09-06T08:08:36Z | - |
dc.date.available | 2010-09-06T08:08:36Z | - |
dc.date.issued | 2004 | en_HK |
dc.identifier.citation | Communications In Theoretical Physics, 2004, v. 41 n. 4, p. 609-613 | en_HK |
dc.identifier.issn | 0253-6102 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/80633 | - |
dc.description.abstract | Ab initio total energy calculations are used to determine the interface structure of GaN films grown on 6H-SiC(0001) with different substrate reconstructions. The results indicate that GaN films grown on bare SiC(0001) are of the Ga-polarity, while GaN films grown on SiC(0001) with Si adlayer are of the N-polarity if there is no N-Si interchange at the interface. With the interchange, the GaN films are of the Ga-polarity. | en_HK |
dc.language | eng | en_HK |
dc.publisher | Chinese Academy of Sciences, Institute of Theoretical Physics. The Journal's web site is located at http://ctp.itp.cn | en_HK |
dc.relation.ispartof | Communications in Theoretical Physics | en_HK |
dc.subject | Adlayer | en_HK |
dc.subject | Interface | en_HK |
dc.subject | Polarity | en_HK |
dc.subject | Total energy calculation | en_HK |
dc.title | Atomic design of polarity of GaN films grown on SiC(0001) | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0253-6102&volume=41&spage=609&epage=613&date=2004&atitle=Atomic+design+of+polarity+of+GaN+films+grown+on+SiC(0001) | en_HK |
dc.identifier.email | Wu, HS: hswu@hkucc.hku.hk | en_HK |
dc.identifier.email | Xie, MH: mhxie@hku.hk | en_HK |
dc.identifier.authority | Wu, HS=rp00813 | en_HK |
dc.identifier.authority | Xie, MH=rp00818 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.scopus | eid_2-s2.0-2442536835 | en_HK |
dc.identifier.hkuros | 92630 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-2442536835&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 41 | en_HK |
dc.identifier.issue | 4 | en_HK |
dc.identifier.spage | 609 | en_HK |
dc.identifier.epage | 613 | en_HK |
dc.publisher.place | China | en_HK |
dc.identifier.scopusauthorid | Dai, XQ=7201696526 | en_HK |
dc.identifier.scopusauthorid | Wu, HS=7405584367 | en_HK |
dc.identifier.scopusauthorid | Xu, SH=36832008600 | en_HK |
dc.identifier.scopusauthorid | Xie, MH=7202255416 | en_HK |
dc.identifier.scopusauthorid | Tong, SY=24512624800 | en_HK |
dc.identifier.issnl | 0253-6102 | - |