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Article: Atomic design of polarity of GaN films grown on SiC(0001)

TitleAtomic design of polarity of GaN films grown on SiC(0001)
Authors
KeywordsAdlayer
Interface
Polarity
Total energy calculation
Issue Date2004
PublisherChinese Academy of Sciences, Institute of Theoretical Physics. The Journal's web site is located at http://ctp.itp.cn
Citation
Communications In Theoretical Physics, 2004, v. 41 n. 4, p. 609-613 How to Cite?
AbstractAb initio total energy calculations are used to determine the interface structure of GaN films grown on 6H-SiC(0001) with different substrate reconstructions. The results indicate that GaN films grown on bare SiC(0001) are of the Ga-polarity, while GaN films grown on SiC(0001) with Si adlayer are of the N-polarity if there is no N-Si interchange at the interface. With the interchange, the GaN films are of the Ga-polarity.
Persistent Identifierhttp://hdl.handle.net/10722/80633
ISSN
2014 Impact Factor: 0.893
2013 SCImago Journal Rankings: 0.464
References

 

DC FieldValueLanguage
dc.contributor.authorDai, XQen_HK
dc.contributor.authorWu, HSen_HK
dc.contributor.authorXu, SHen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorTong, SYen_HK
dc.date.accessioned2010-09-06T08:08:36Z-
dc.date.available2010-09-06T08:08:36Z-
dc.date.issued2004en_HK
dc.identifier.citationCommunications In Theoretical Physics, 2004, v. 41 n. 4, p. 609-613en_HK
dc.identifier.issn0253-6102en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80633-
dc.description.abstractAb initio total energy calculations are used to determine the interface structure of GaN films grown on 6H-SiC(0001) with different substrate reconstructions. The results indicate that GaN films grown on bare SiC(0001) are of the Ga-polarity, while GaN films grown on SiC(0001) with Si adlayer are of the N-polarity if there is no N-Si interchange at the interface. With the interchange, the GaN films are of the Ga-polarity.en_HK
dc.languageengen_HK
dc.publisherChinese Academy of Sciences, Institute of Theoretical Physics. The Journal's web site is located at http://ctp.itp.cnen_HK
dc.relation.ispartofCommunications in Theoretical Physicsen_HK
dc.subjectAdlayeren_HK
dc.subjectInterfaceen_HK
dc.subjectPolarityen_HK
dc.subjectTotal energy calculationen_HK
dc.titleAtomic design of polarity of GaN films grown on SiC(0001)en_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0253-6102&volume=41&spage=609&epage=613&date=2004&atitle=Atomic+design+of+polarity+of+GaN+films+grown+on+SiC(0001)en_HK
dc.identifier.emailWu, HS: hswu@hkucc.hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityWu, HS=rp00813en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-2442536835en_HK
dc.identifier.hkuros92630en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-2442536835&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume41en_HK
dc.identifier.issue4en_HK
dc.identifier.spage609en_HK
dc.identifier.epage613en_HK
dc.publisher.placeChinaen_HK
dc.identifier.scopusauthoridDai, XQ=7201696526en_HK
dc.identifier.scopusauthoridWu, HS=7405584367en_HK
dc.identifier.scopusauthoridXu, SH=36832008600en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK

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