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Browsing by Author Tong, SY
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Showing results 1 to 20 of 61
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Title
Author(s)
Issue Date
Views
Ab initio study of indium quantum wire formation on flat and stepped Si(100) surfaces
Journal:
Surface Review and Letters
Dai, XQI
WeiWei, JU
Xie, MH
Tong, SY
2005
215
Adsorption and desorption kinetics of gallium atoms on 6H-SiC(0001) surfaces
Journal:
Physical Review B (Condensed Matter)
Zheng, LX
Xie, MH
Tong, SY
2000
223
Anisotropic step-flow growth and island growth of GaN(0001) by molecular beam epitaxy
Journal:
Physical Review Letters
Xie, MH
Seutter, SM
Zhu, WK
Zheng, LX
Wu, H
Tong, SY
1999
199
Antibacterial and photocatalytic activity of TiO2 and ZnO nanomaterials in phosphate buffer and saline solution
Journal:
Applied Microbiology and Biotechnology
Ng, AMC
Chan, CMN
Guo, MY
Leung, YH
Djurišić, AB
Hu, X
Chan, WK
Leung, FCC
Tong, SY
2013
135
Atomic design of polarity of GaN films grown on SiC(0001)
Journal:
Communications in Theoretical Physics
Dai, XQ
Wu, HS
Xu, SH
Xie, MH
Tong, SY
2004
268
Coherent and dislocated three-dimensional islands of Inx Ga1-x N self-assembled on GaN(0001) during molecular-beam epitaxy
Journal:
Physical Review B (Condensed Matter and Materials Physics)
Liu, Y
Cao, YG
Wu, HS
Xie, MH
Tong, SY
2005
128
Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers
Journal:
Applied Physics Letters
Xu, SJ
Zheng, LX
Cheung, SH
Xie, MH
Tong, SY
Yang, H
2002
171
Convergent N2-scaling iterative method of photoelectron diffraction and low-energy electron diffraction for ordered or disordered systems
Journal:
Physical Review B (Condensed Matter)
Wu, H
Tong, SY
1999
162
Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy
Journal:
Journal of Crystal Growth
Zheng, LX
Xie, MH
Xu, SJ
Cheung, SH
Tong, SY
2001
162
Direct inversion of low-energy electron diffraction (LEED) IV spectra: The surface Patterson function
Journal:
Journal of Physics Condensed Matter
Tong, SY
Wu, H
2002
182
Direct observation of a Ga adlayer on a GaN(0001) surface by LEED Patterson inversion
Journal:
Physical Review B (Condensed Matter)
Xu, SH
Wu, H
Dai, XQ
Lau, WP
Zheng, LX
Xie, MH
Tong, SY
2003
151
Evidence for a Type-II band alignment between cubic and hexagonal phases of GaN
Journal:
Applied Physics Letters
Lu, XH
Yu, PY
Zheng, LX
Xu, SJ
Xie, MH
Tong, SY
2003
186
Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates
Journal:
International Journal of Modern Physics B
Xie, MH
Cheung, SH
Zheng, LX
Tong, SY
Zhang, BS
Yang, H
2002
242
Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy
Journal:
Applied Physics Letters
Ng, YF
Cao, YG
Xie, MH
Wang, XL
Tong, SY
2002
216
Growth of triangular ZnO nanorods by electrodeposition
Journal:
Journal of the Electrochemical Society
Chen, XY
Fang, F
Ng, AMC
Djurišić, AB
Tong, SY
2010
155
High-risk prostate cancer: what can we expect after prostatectomy?
Proceeding/Conference:
BJU International
Yuen, SKK
Chiu, PK
Tong, SY
Hou, SM
Yiu, MK
Ng, CF
2016
41
In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy
Journal:
Physical Review B (Condensed Matter and Materials Physics)
Cao, YG
Xu, SH
Lü, W
Dai, XQ
Chan, YF
Wang, N
Liu, Y
Wu, HS
Xie, MH
Tong, SY
2005
171
Initial stage of GaN growth and its implication to defect formation in films
Journal:
Physical Review B (Condensed Matter)
Cheung, SH
Zheng, LX
Xie, MH
Tong, SY
Ohtani, N
2001
110
InN Island shape and its dependence on growth condition of molecular-beam epitaxy
Journal:
Applied Physics Letters
Cao, YG
Xie, MH
Liu, Y
Ng, YF
Wu, HS
Tong, SY
2003
194
Large excitation-power dependence of pressure coefficients of InxGa1-xN/Iny Ga1-yN quantum wells
Proceeding/Conference:
Physica Status Solidi (B) Basic Research
Li, Q
Fang, ZL
Xu, SJ
Li, GH
Xie, MH
Tong, SY
Zhang, XH
Liu, W
Chua, SJ
2003
136