Browsing by Author Tong, SY

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TitleAuthor(s)Issue DateViews
 
Ab initio study of indium quantum wire formation on flat and stepped Si(100) surfaces
Journal:Surface Review and Letters
Dai, XQIWeiWei, JUXie, MHTong, SY
2005
88
 
Adsorption and desorption kinetics of gallium atoms on 6H-SiC(0001) surfaces
Journal:Physical Review B - Condensed Matter and Materials Physics
Zheng, LXXie, MHTong, SY
2000
67
 
Anisotropic step-flow growth and island growth of GaN(0001) by molecular beam epitaxy
Journal:Physical Review Letters
Xie, MHSeutter, SMZhu, WKZheng, LXWu, HTong, SY
1999
79
 
Antibacterial and photocatalytic activity of TiO2 and ZnO nanomaterials in phosphate buffer and saline solution
Journal:Applied Microbiology and Biotechnology
Ng, AMCChan, CMNGuo, MYLeung, YHDjurišić, ABHu, XChan, WKLeung, FCCTong, SY
2013
143
 
Atomic design of polarity of GaN films grown on SiC(0001)
Journal:Communications in Theoretical Physics
Dai, XQWu, HSXu, SHXie, MHTong, SY
2004
79
 
Coherent and dislocated three-dimensional islands of Inx Ga1-x N self-assembled on GaN(0001) during molecular-beam epitaxy
Journal:Physical Review B - Condensed Matter and Materials Physics
Liu, YCao, YGWu, HSXie, MHTong, SY
2005
54
 
Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers
Journal:Applied Physics Letters
Xu, SJZheng, LXCheung, SHXie, MHTong, SYYang, H
2002
60
 
Convergent N2-scaling iterative method of photoelectron diffraction and low-energy electron diffraction for ordered or disordered systems
Journal:Physical Review B - Condensed Matter and Materials Physics
Wu, HTong, SY
1999
58
 
Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy
Journal:Journal of Crystal Growth
Zheng, LXXie, MHXu, SJCheung, SHTong, SY
2001
57
 
Direct inversion of low-energy electron diffraction (LEED) IV spectra: The surface Patterson function
Journal:Journal of Physics Condensed Matter
Tong, SYWu, H
2002
61
 
Direct observation of a Ga adlayer on a GaN(0001) surface by LEED Patterson inversion
Journal:Physical Review B - Condensed Matter and Materials Physics
Xu, SHWu, HDai, XQLau, WPZheng, LXXie, MHTong, SY
2003
71
 
Evidence for a Type-II band alignment between cubic and hexagonal phases of GaN
Journal:Applied Physics Letters
Lu, XHYu, PYZheng, LXXu, SJXie, MHTong, SY
2003
74
 
Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates
Journal:International Journal of Modern Physics B
Xie, MHCheung, SHZheng, LXTong, SYZhang, BSYang, H
2002
61
 
Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy
Journal:Applied Physics Letters
Ng, YFCao, YGXie, MHWang, XLTong, SY
2002
85
 
Growth of triangular ZnO nanorods by electrodeposition
Journal:Journal of the Electrochemical Society
Chen, XYFang, FNg, AMCDjurišić, ABTong, SY
2010
62
 
High-risk prostate cancer: what can we expect after prostatectomy?
Proceeding/Conference:BJU International
Yuen, SKKChiu, PKTong, SYHou, SMYiu, MKNg, CF
2016
15
 
In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy
Journal:Physical Review B - Condensed Matter and Materials Physics
Cao, YGXu, SHLü, WDai, XQChan, YFWang, NLiu, YWu, HSXie, MHTong, SY
2005
69
 
Initial stage of GaN growth and its implication to defect formation in films
Journal:Physical Review B - Condensed Matter and Materials Physics
Cheung, SHZheng, LXXie, MHTong, SYOhtani, N
2001
44
 
InN Island shape and its dependence on growth condition of molecular-beam epitaxy
Journal:Applied Physics Letters
Cao, YGXie, MHLiu, YNg, YFWu, HSTong, SY
2003
60
 
Large excitation-power dependence of pressure coefficients of InxGa1-xN/Iny Ga1-yN quantum wells
Proceeding/Conference:Physica Status Solidi (B) Basic Research
Li, QFang, ZLXu, SJLi, GHXie, MHTong, SYZhang, XHLiu, WChua, SJ
2003
98
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