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Title	Author(s)	Issue Date
Ab initio study of indium quantum wire formation on flat and stepped Si(100) surfaces Journal:Surface Review and Letters	Dai, XQI WeiWei, JU Xie, MH Tong, SY	2005
Adsorption and desorption kinetics of gallium atoms on 6H-SiC(0001) surfaces Journal:Physical Review B (Condensed Matter)	Zheng, LX Xie, MH Tong, SY	2000
Anisotropic step-flow growth and island growth of GaN(0001) by molecular beam epitaxy Journal:Physical Review Letters	Xie, MH Seutter, SM Zhu, WK Zheng, LX Wu, H Tong, SY	1999
Antibacterial and photocatalytic activity of TiO2 and ZnO nanomaterials in phosphate buffer and saline solution Journal:Applied Microbiology and Biotechnology	Ng, AMC Chan, CMN Guo, MY Leung, YH Djurišić, AB Hu, X Chan, WK Leung, FCC Tong, SY	2013
Atomic design of polarity of GaN films grown on SiC(0001) Journal:Communications in Theoretical Physics	Dai, XQ Wu, HS Xu, SH Xie, MH Tong, SY	2004
Avoiding Sabatier’s conflict in bifunctional heterogeneous catalysts for the WGS reaction Journal:Chem	Tian, H HE, Y Zhao, Q Li, J Shao, X Zhang, Z Huang, X Lu, C Wang, K Jiang, Q Ng, AMC Xu, H Tong, SY	2021
Coherent and dislocated three-dimensional islands of Inx Ga1-x N self-assembled on GaN(0001) during molecular-beam epitaxy Journal:Physical Review B (Condensed Matter and Materials Physics)	Liu, Y Cao, YG Wu, HS Xie, MH Tong, SY	2005
Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers Journal:Applied Physics Letters	Xu, SJ Zheng, LX Cheung, SH Xie, MH Tong, SY Yang, H	2002
Convergent N2-scaling iterative method of photoelectron diffraction and low-energy electron diffraction for ordered or disordered systems Journal:Physical Review B (Condensed Matter)	Wu, H Tong, SY	1999
Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy Journal:Journal of Crystal Growth	Zheng, LX Xie, MH Xu, SJ Cheung, SH Tong, SY	2001
Direct inversion of low-energy electron diffraction (LEED) IV spectra: The surface Patterson function Journal:Journal of Physics Condensed Matter	Tong, SY Wu, H	2002
Direct observation of a Ga adlayer on a GaN(0001) surface by LEED Patterson inversion Journal:Physical Review B (Condensed Matter)	Xu, SH Wu, H Dai, XQ Lau, WP Zheng, LX Xie, MH Tong, SY	2003
Evidence for a Type-II band alignment between cubic and hexagonal phases of GaN Journal:Applied Physics Letters	Lu, XH Yu, PY Zheng, LX Xu, SJ Xie, MH Tong, SY	2003
Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates Journal:International Journal of Modern Physics B	Xie, MH Cheung, SH Zheng, LX Tong, SY Zhang, BS Yang, H	2002
Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy Journal:Applied Physics Letters	Ng, YF Cao, YG Xie, MH Wang, XL Tong, SY	2002
Growth of triangular ZnO nanorods by electrodeposition Journal:Journal of the Electrochemical Society	Chen, XY Fang, F Ng, AMC Djurišić, AB Tong, SY	2010
High-risk prostate cancer: what can we expect after prostatectomy? Proceeding/Conference:BJU International	Yuen, SKK Chiu, PK Tong, SY Hou, SM Yiu, MK Ng, CF	2016
In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy Journal:Physical Review B (Condensed Matter and Materials Physics)	Cao, YG Xu, SH Lü, W Dai, XQ Chan, YF Wang, N Liu, Y Wu, HS Xie, MH Tong, SY	2005
Initial stage of GaN growth and its implication to defect formation in films Journal:Physical Review B (Condensed Matter)	Cheung, SH Zheng, LX Xie, MH Tong, SY Ohtani, N	2001
InN Island shape and its dependence on growth condition of molecular-beam epitaxy Journal:Applied Physics Letters	Cao, YG Xie, MH Liu, Y Ng, YF Wu, HS Tong, SY	2003

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