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Title	Author(s)	Issue Date	Views
2D threshold-voltage model for high-k gate-dielectric MOSFETs Journal:Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors	Ji, F Xu, J Lai, PT Chen, W Li, Y	2006	173
A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k gate dielectric Journal:Microelectronics Reliability	JI, F XU, JP LIU, L TANG, WM Lai, PT	2016	39
A compact threshold-voltage model of MOSFETs with stack high-k gate dielectric Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009	Ji, F Xu, JP Chen, JJ Xu, HX Li, CX Lai, PT	2009	198
Comparative study of high-K HfLaON and HfON as charge-storage layer of MONOS memory Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010	Liu, L Xu, JP Huang, XD Ji, F Lai, PT	2010	165
Comparison of Over-the-Scope Clips to Standard Endoscopic Treatment as the Initial Treatment in Patients With Bleeding From a Nonvariceal Upper Gastrointestinal Cause Journal:Annals of Internal Medicine	Lau, JYW Li, R Tan, CH Sun, XJ Song, HJ Li, L Ji, F Wang, BJ Shi, DT Leung, WK Hartley, I Moss, A Yu, KYY Suen, BY Li, P Chan, FKL	1-Mar-2023
Cost-effectiveness of universal screening for chronic hepatitis B virus infection in China: an economic evaluation Journal:The Lancet Global Health	Su, S Wong, WCW Zou, Z Cheng, DD Ong, JJ Chan, P Ji, F Yuen, MF Zhuang, G Seto, WK Zhang, L	2022	43
Electrical characteristics of Al-doped ZnO-channel thin-film transistor with high-κ HfON/SiO 2 stack gate dielectric Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010	Zou, X Xu, JP Lai, PT Li, Y Ji, F Deng, LF	2010	133
Electrical properties of HfTiO gate-dielectric metal oxide semiconductor capacitors with NO and N 2O surface nitridations Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010	Ji, F Xu, JP Li, CX Lai, PT Deng, LF Zou, X	2010	134
Electrical properties of HfTiON gate-dielectric metal-oxide-semiconductor capacitors with different Si-surface nitridations Journal:Applied Physics Letters	Ji, F Xu, JP Lai, PT Li, CX Guan, JG	2007	197
A fringing-capacitance model for deep-submicron MOSFET with high-k gate dielectric Journal:Microelectronics Reliability	Ji, F Xu, JP Lai, PT Guan, JG	2008	176
Higher Hepatocellular Carcinoma (HCC) Incidence In Chronic Hepatitis C (CHC) Patients After Hepatitis C Virus (HCV) Cure Compared To Treated Chronic Hepatitis B (CHB): Results From A Multinational Real-World Cohort Of Patients With Cirrhosis Proceeding/Conference:Hepatology	Park, J Tran, S Ogawa, E Huang, CF Toyoda, H Chen, CH Yeh, ML Tseng, CH Hsu, YC Kawashima, K Preda, C Istratescu, D Yasuda, S Nozaki, A Chuma, M Oh, H Shim, JJ Jeong, SW An, J Ahn, SB Kim, SE Yoon, E Lee, HA Kim, HS Cho, YK Uojima, H Trinh, H Atsukawa, M Itokawa, N Okubo, T Abe, H Lee, DH Jun, MJ Landis, C Liu, J Enomoto, M Watanabe, T Ji, F Wang, W Yu, L Xie, Q Fukunishi, S Asai, A Yokohama, K Ishikawa, T Liu, L Li, J Takahashi, H Inoue, K Eguchi, Y Ishigami, M Ito, T Huang, D Wong, GL Wong, V Lu, C Zang, W Li, J Ueno, Y Haga, H Marciano, S Jing, L Ye, Q Lam, C Ho, DK Do, ST Huang, R Takaguchi, K Senoh, T Chien, N Maeda, M Kudaravalli, S Henry, L Chuang, WL Dai, CY Huang, JF Gadano, AC Yuen, MF Lim, SG Cheung, R Tanaka, Y Jun, DW Yu, ML Nguyen, MH	31-Oct-2022
Impacts of Ti content and annealing temperature on electrical properties of Si MOS capacitors with HfTiON gate dielectric Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009	Ji, F Xu, JP Li, CX Lai, PT Chan, CL	2009
Improved Charge-Trapping Properties of TiON/HfON Dual Charge Storage Layer by Tapered Band Structure Journal:Applied Physics Letters	Liu, L Xu, J Chen, JX Ji, F Lai, PT	2012
Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer Journal:Applied Physics Letters	Xu, JP Ji, F Li, CX Lai, PT Guan, JG Liu, YR	2007	116
Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayer Journal:Applied Physics Letters	Ji, F Xu, JP Liu, JG Li, CX Lai, PT	2011	206
Improved interfacial properties of Ge MOS capacitor with high-k dielectric by using TaON/GeON dual interlayer Journal:IEEE Electron Device Letters	Ji, F Xu, JP Lai, PT Li, CX Liu, JG	2011	200
Improved Memory Characteristics by NH3-Nitrided GdO as Charge Storage Layer for Nonvolatile Memory Applications Journal:Applied Physics Letters	Liu, L Xu, J Ji, F Chen, JX Lai, PT	2012	73
Improved Memory Window of MONOS Memory Capacitor with GdON as Charge Storage Layer Proceeding/Conference:I E E E Conference on Electron Devices and Solid-State Circuits Proceedings	Liu, L Xu, J Chen, JX Ji, F HUANG, X Lai, PT	2012	60
Influence of gate-electrode fringing capacitance on threshold voltage of nano-MOSFET Proceeding/Conference:ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings	Ji, F Xu, JP Lai, PT Li, CX	2007	64
Influence of natridation annealing of HfTiO on electrical properties of MOS device Journal:Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics	Ji, F Xu, J Zhang, H Lai, P Li, C Guan, J	2008	128

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