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Article: Influence of natridation annealing of HfTiO on electrical properties of MOS device
Title | Influence of natridation annealing of HfTiO on electrical properties of MOS device |
---|---|
Authors | |
Keywords | HfTiO High-k gate dielectric Natridation Post-deposition annealing |
Issue Date | 2008 |
Citation | Guti Dianzixue Yanjiu Yu Jinzhan/Research And Progress Of Solid State Electronics, 2008, v. 28 n. 3, p. 330-333 How to Cite? |
Abstract | HfTiO gate dielectric is first deposited on Si wafer through co-sputtering method. The influences of post-deposition annealing (PDA) in NO, N 2O, NH 3 and N 2 ambients on the electrical properties of MOS device are studied. It is found that NO-annealed sample exhibits good electrical properties, i.e. low interface-state density, low gate leakage current and high reliability due to formation of a SiO 2/Si-like interface of HfTiSiON interlayer. In addition, based on the relationship between the physical thickness change (ΔT ox) of gate dielectric (HfTiON/HfTi-SiON), the capacitance equivalent thickness changes (ΔCET) of MOS and the k value of HfTiON dielectric, the dielectric constant of HfTiON with PDA in NO ambient is found to be 28. |
Persistent Identifier | http://hdl.handle.net/10722/155495 |
ISSN | 2023 SCImago Journal Rankings: 0.104 |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ji, F | en_HK |
dc.contributor.author | Xu, J | en_HK |
dc.contributor.author | Zhang, H | en_HK |
dc.contributor.author | Lai, P | en_HK |
dc.contributor.author | Li, C | en_HK |
dc.contributor.author | Guan, J | en_HK |
dc.date.accessioned | 2012-08-08T08:33:46Z | - |
dc.date.available | 2012-08-08T08:33:46Z | - |
dc.date.issued | 2008 | en_HK |
dc.identifier.citation | Guti Dianzixue Yanjiu Yu Jinzhan/Research And Progress Of Solid State Electronics, 2008, v. 28 n. 3, p. 330-333 | en_HK |
dc.identifier.issn | 1000-3819 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/155495 | - |
dc.description.abstract | HfTiO gate dielectric is first deposited on Si wafer through co-sputtering method. The influences of post-deposition annealing (PDA) in NO, N 2O, NH 3 and N 2 ambients on the electrical properties of MOS device are studied. It is found that NO-annealed sample exhibits good electrical properties, i.e. low interface-state density, low gate leakage current and high reliability due to formation of a SiO 2/Si-like interface of HfTiSiON interlayer. In addition, based on the relationship between the physical thickness change (ΔT ox) of gate dielectric (HfTiON/HfTi-SiON), the capacitance equivalent thickness changes (ΔCET) of MOS and the k value of HfTiON dielectric, the dielectric constant of HfTiON with PDA in NO ambient is found to be 28. | en_HK |
dc.language | eng | en_US |
dc.relation.ispartof | Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | en_HK |
dc.subject | HfTiO | en_HK |
dc.subject | High-k gate dielectric | en_HK |
dc.subject | Natridation | en_HK |
dc.subject | Post-deposition annealing | en_HK |
dc.title | Influence of natridation annealing of HfTiO on electrical properties of MOS device | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Xu, J: jpxu@eee.hku.hk | en_HK |
dc.identifier.email | Lai, P: laip@eee.hku.hk | en_HK |
dc.identifier.authority | Xu, J=rp00197 | en_HK |
dc.identifier.authority | Lai, P=rp00130 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.scopus | eid_2-s2.0-54049150873 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-54049150873&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 28 | en_HK |
dc.identifier.issue | 3 | en_HK |
dc.identifier.spage | 330 | en_HK |
dc.identifier.epage | 333 | en_HK |
dc.identifier.scopusauthorid | Ji, F=8238553900 | en_HK |
dc.identifier.scopusauthorid | Xu, J=7407004696 | en_HK |
dc.identifier.scopusauthorid | Zhang, H=8516600700 | en_HK |
dc.identifier.scopusauthorid | Lai, P=7202946460 | en_HK |
dc.identifier.scopusauthorid | Li, C=22034888200 | en_HK |
dc.identifier.scopusauthorid | Guan, J=7201449685 | en_HK |
dc.identifier.issnl | 1000-3819 | - |