Browsing by Author Ji, F

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TitleAuthor(s)Issue DateViews
 
2D threshold-voltage model for high-k gate-dielectric MOSFETs
Journal:Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
2006
97
 
A compact threshold-voltage model of MOSFETs with stack high-k gate dielectric
Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
2009
189
Comparative study of high-K HfLaON and HfON as charge-storage layer of MONOS memory
Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
2010
36
Electrical characteristics of Al-doped ZnO-channel thin-film transistor with high-κ HfON/SiO 2 stack gate dielectric
Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
2010
70
Electrical properties of HfTiO gate-dielectric metal oxide semiconductor capacitors with NO and N 2O surface nitridations
Proceeding/Conference:2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010
2010
37
 
2007
51
 
2008
56
 
Impacts of Ti content and annealing temperature on electrical properties of Si MOS capacitors with HfTiON gate dielectric
Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
2009
182
 
2012
44
 
2007
38
 
2011
60
 
2011
76
 
2012
47
 
Improved Memory Window of MONOS Memory Capacitor with GdON as Charge Storage Layer
Proceeding/Conference:I E E E Conference on Electron Devices and Solid-State Circuits Proceedings
2012
55
Influence of gate-electrode fringing capacitance on threshold voltage of nano-MOSFET
Proceeding/Conference:ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
2007
56
 
Influence of natridation annealing of HfTiO on electrical properties of MOS device
Journal:Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
2008
60
 
2008
71
 
A novel MONOS memory with high-κ HfLaON as charge-storage layer
Journal:IEEE Transactions on Device and Materials Reliability
2011
78
 
2014
40
 
2007
70