Browsing by Author Zou, X

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Showing results 10 to 29 of 32 < previous   next >
TitleAuthor(s)Issue DateViews
 
Gate Leakage Model of Ge MOS Capacitor with High-k Gate Dielectric
Proceeding/Conference:Proceedings of 8th ICSICT
2006
116
Gate-leakage model of Ge MOS capacitor with high-k gate dielectric
Proceeding/Conference:ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
2007
135
 
Identification of vacancy-like defects in high-rate grown a-Si before and after ligh soaking by vepas
Proceeding/Conference:Materials Research Society Symposium Proceedings
1999
145
 
2006
522
 
2009
213
 
Improved properties of Ge MOS capacitors with HfTiON or HfTiO gate dielectric by using wet-NO ge-surface pretreatment
Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits Proceedings
2008
202
 
2019
176
 
1999
158
 
2020
13
Modeling of scattering at high-k dielectric/SiO2 interface of strained SiGe MOSFETs
Proceeding/Conference:ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
2007
188
 
2008
125
 
Optimization of Tree-like Core Overlay in Hybrid-structured Application-layer Multicast
Journal:KSII Transactions on Internet and Information Systems
2012
70
 
2020
18
 
2000
181
Preparation of high-quality gate dielectrics for Ge MOSFET's in wet ambients
Proceeding/Conference:Proceedings of the International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2006
2007
136
 
1998
80
 
Simulation and measurement of topological phase transitions with alkaline-earth-metal atoms in optical lattices
Journal:Physical Review A: covering atomic, molecular, and optical physics and quantum information
2019
25
 
Study of microvoids in high-rate a-Si:H using positron annihilation
Proceeding/Conference:Materials Research Society Symposium Proceedings
1997
146
 
Suppressed growth of interlayer GeO x in Ge MOS capacitors with gate dielectric prepared in wet NO ambient
Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC) Proceedings
2005
182
 
2007
181