Conference Paper: Interface characterisation and internal electric field evaluation of a-Si:H pin solar cell by variable energy positron annhilation spectroscopy

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TitleInterface characterisation and internal electric field evaluation of a-Si:H pin solar cell by variable energy positron annhilation spectroscopy
AuthorsZou, X
Chan, YC
Webb, DP
Lam, YW
Chan, FYM
Lin, SH
Hu, YF
Beling, CD
Fung, SHY
KeywordsPhysics engineering chemistry
Issue Date1999
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
CitationAmorphous and microcrystalline silicon technology-1998, Materials Research Society Symposium Proceedings, San Francisco, California, USA, 14-17 April 1998, v. 507, p. 643-648 [How to Cite?]
AbstractBy means of the slow positron beam Doppler-broadening technique, the depth profile of microvoids across a p-i-n double junction solar cell has been resolved. VEPFIT fitting results indicate an approximately uniform density of the defects throughout the solar cell, but with an enhanced concentration at all of the interfaces possibly due to network mismatch. In order to evaluate the internal electric field, Variable Energy Positron Annihilation Spectroscopy (VEPAS) measurements have been performed on a single junction pin solar cell at different biases. The internal electric field effect on positrons has also been examined in terms of the bias dependence of positron drift in a-Si:H single junction pin solar cell.
ISSN0272-9172
2011 SCImago Journal Rankings: 0.029
DC Field
Value
dc.contributor.authorZou, X
dc.contributor.authorChan, YC
dc.contributor.authorWebb, DP
dc.contributor.authorLam, YW
dc.contributor.authorChan, FYM
dc.contributor.authorLin, SH
dc.contributor.authorHu, YF
dc.contributor.authorBeling, CD
dc.contributor.authorFung, SHY
dc.date.accessioned2007-10-30T07:04:53Z
dc.date.available2007-10-30T07:04:53Z
dc.date.issued1999
dc.description.abstractBy means of the slow positron beam Doppler-broadening technique, the depth profile of microvoids across a p-i-n double junction solar cell has been resolved. VEPFIT fitting results indicate an approximately uniform density of the defects throughout the solar cell, but with an enhanced concentration at all of the interfaces possibly due to network mismatch. In order to evaluate the internal electric field, Variable Energy Positron Annihilation Spectroscopy (VEPAS) measurements have been performed on a single junction pin solar cell at different biases. The internal electric field effect on positrons has also been examined in terms of the bias dependence of positron drift in a-Si:H single junction pin solar cell.
dc.description.naturepublished_or_final_version
dc.format.extent266490 bytes
dc.format.extent13983 bytes
dc.format.extent5932 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.identifier.citationAmorphous and microcrystalline silicon technology-1998, Materials Research Society Symposium Proceedings, San Francisco, California, USA, 14-17 April 1998, v. 507, p. 643-648 [How to Cite?]
dc.identifier.hkuros40641
dc.identifier.issn0272-9172
2011 SCImago Journal Rankings: 0.029
dc.identifier.openurl
dc.identifier.urihttp://hdl.handle.net/10722/47032
dc.languageeng
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
dc.subjectPhysics engineering chemistry
dc.titleInterface characterisation and internal electric field evaluation of a-Si:H pin solar cell by variable energy positron annhilation spectroscopy
dc.typeConference_Paper