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Conference Paper: Interface characterisation and internal electric field evaluation of a-Si:H pin solar cell by variable energy positron annhilation spectroscopy

TitleInterface characterisation and internal electric field evaluation of a-Si:H pin solar cell by variable energy positron annhilation spectroscopy
Authors
KeywordsPhysics engineering chemistry
Issue Date1999
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Amorphous and microcrystalline silicon technology-1998, Materials Research Society Symposium Proceedings, San Francisco, California, USA, 14-17 April 1998, v. 507, p. 643-648 How to Cite?
Abstract
By means of the slow positron beam Doppler-broadening technique, the depth profile of microvoids across a p-i-n double junction solar cell has been resolved. VEPFIT fitting results indicate an approximately uniform density of the defects throughout the solar cell, but with an enhanced concentration at all of the interfaces possibly due to network mismatch. In order to evaluate the internal electric field, Variable Energy Positron Annihilation Spectroscopy (VEPAS) measurements have been performed on a single junction pin solar cell at different biases. The internal electric field effect on positrons has also been examined in terms of the bias dependence of positron drift in a-Si:H single junction pin solar cell.
Persistent Identifierhttp://hdl.handle.net/10722/47032
ISSN
2013 SCImago Journal Rankings: 0.128

 

DC FieldValueLanguage
dc.contributor.authorZou, Xen_HK
dc.contributor.authorChan, YCen_HK
dc.contributor.authorWebb, DPen_HK
dc.contributor.authorLam, YWen_HK
dc.contributor.authorChan, FYMen_HK
dc.contributor.authorLin, SHen_HK
dc.contributor.authorHu, YFen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, SHYen_HK
dc.date.accessioned2007-10-30T07:04:53Z-
dc.date.available2007-10-30T07:04:53Z-
dc.date.issued1999en_HK
dc.identifier.citationAmorphous and microcrystalline silicon technology-1998, Materials Research Society Symposium Proceedings, San Francisco, California, USA, 14-17 April 1998, v. 507, p. 643-648en_HK
dc.identifier.issn0272-9172en_HK
dc.identifier.urihttp://hdl.handle.net/10722/47032-
dc.description.abstractBy means of the slow positron beam Doppler-broadening technique, the depth profile of microvoids across a p-i-n double junction solar cell has been resolved. VEPFIT fitting results indicate an approximately uniform density of the defects throughout the solar cell, but with an enhanced concentration at all of the interfaces possibly due to network mismatch. In order to evaluate the internal electric field, Variable Energy Positron Annihilation Spectroscopy (VEPAS) measurements have been performed on a single junction pin solar cell at different biases. The internal electric field effect on positrons has also been examined in terms of the bias dependence of positron drift in a-Si:H single junction pin solar cell.en_HK
dc.format.extent266490 bytes-
dc.format.extent13983 bytes-
dc.format.extent5932 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_HK
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineering chemistryen_HK
dc.titleInterface characterisation and internal electric field evaluation of a-Si:H pin solar cell by variable energy positron annhilation spectroscopyen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=507&spage=643&epage=648&date=1999&atitle=Interface+characterisation+and+internal+electric+field+evaluation+of+a-Si:H+pin+solar+cell+by+variable+energy+positron+annhilation+spectroscopyen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.hkuros40641-

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