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Conference Paper: Interface characterisation and internal electric field evaluation of a-Si:H pin solar cell by variable energy positron annhilation spectroscopy
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TitleInterface characterisation and internal electric field evaluation of a-Si:H pin solar cell by variable energy positron annhilation spectroscopy
 
AuthorsZou, X
Chan, YC
Webb, DP
Lam, YW
Chan, FYM
Lin, SH
Hu, YF
Beling, CD
Fung, SHY
 
KeywordsPhysics engineering chemistry
 
Issue Date1999
 
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
 
CitationAmorphous and microcrystalline silicon technology-1998, Materials Research Society Symposium Proceedings, San Francisco, California, USA, 14-17 April 1998, v. 507, p. 643-648 [How to Cite?]
 
AbstractBy means of the slow positron beam Doppler-broadening technique, the depth profile of microvoids across a p-i-n double junction solar cell has been resolved. VEPFIT fitting results indicate an approximately uniform density of the defects throughout the solar cell, but with an enhanced concentration at all of the interfaces possibly due to network mismatch. In order to evaluate the internal electric field, Variable Energy Positron Annihilation Spectroscopy (VEPAS) measurements have been performed on a single junction pin solar cell at different biases. The internal electric field effect on positrons has also been examined in terms of the bias dependence of positron drift in a-Si:H single junction pin solar cell.
 
ISSN0272-9172
2012 SCImago Journal Rankings: 0.125
 
DC FieldValue
dc.contributor.authorZou, X
 
dc.contributor.authorChan, YC
 
dc.contributor.authorWebb, DP
 
dc.contributor.authorLam, YW
 
dc.contributor.authorChan, FYM
 
dc.contributor.authorLin, SH
 
dc.contributor.authorHu, YF
 
dc.contributor.authorBeling, CD
 
dc.contributor.authorFung, SHY
 
dc.date.accessioned2007-10-30T07:04:53Z
 
dc.date.available2007-10-30T07:04:53Z
 
dc.date.issued1999
 
dc.description.abstractBy means of the slow positron beam Doppler-broadening technique, the depth profile of microvoids across a p-i-n double junction solar cell has been resolved. VEPFIT fitting results indicate an approximately uniform density of the defects throughout the solar cell, but with an enhanced concentration at all of the interfaces possibly due to network mismatch. In order to evaluate the internal electric field, Variable Energy Positron Annihilation Spectroscopy (VEPAS) measurements have been performed on a single junction pin solar cell at different biases. The internal electric field effect on positrons has also been examined in terms of the bias dependence of positron drift in a-Si:H single junction pin solar cell.
 
dc.description.naturepublished_or_final_version
 
dc.format.extent266490 bytes
 
dc.format.extent13983 bytes
 
dc.format.extent5932 bytes
 
dc.format.mimetypeapplication/pdf
 
dc.format.mimetypeapplication/pdf
 
dc.format.mimetypetext/plain
 
dc.identifier.citationAmorphous and microcrystalline silicon technology-1998, Materials Research Society Symposium Proceedings, San Francisco, California, USA, 14-17 April 1998, v. 507, p. 643-648 [How to Cite?]
 
dc.identifier.hkuros40641
 
dc.identifier.issn0272-9172
2012 SCImago Journal Rankings: 0.125
 
dc.identifier.openurl
 
dc.identifier.urihttp://hdl.handle.net/10722/47032
 
dc.languageeng
 
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
 
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.subjectPhysics engineering chemistry
 
dc.titleInterface characterisation and internal electric field evaluation of a-Si:H pin solar cell by variable energy positron annhilation spectroscopy
 
dc.typeConference_Paper
 
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<description.abstract>By means of the slow positron beam Doppler-broadening technique, the depth profile of microvoids across a p-i-n double junction solar cell has been resolved. VEPFIT fitting results indicate an approximately uniform density of the defects throughout the solar cell, but with an enhanced concentration at all of the interfaces possibly due to network mismatch. In order to evaluate the internal electric field, Variable Energy Positron Annihilation Spectroscopy (VEPAS) measurements have been performed on a single junction pin solar cell at different biases. The internal electric field effect on positrons has also been examined in terms of the bias dependence of positron drift in a-Si:H single junction pin solar cell.</description.abstract>
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