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Conference Paper: Identification of vacancy-like defects in high-rate grown a-Si before and after ligh soaking by vepas
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TitleIdentification of vacancy-like defects in high-rate grown a-Si before and after ligh soaking by vepas
 
AuthorsZou, X
Chan, YC
Webb, DP
Lam, YW
Lin, SH
Chan, FYM
Hu, YF
Weng, X
Beling, CD
Fung, SHY
 
KeywordsPhysics engineering chemistry
 
Issue Date1999
 
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
 
CitationAmorphous and microcrystalline silicon technology-1998, Materials Research Society Symposium Proceedings, San Francisco, California, USA, 14-17 April 1998, v. 507, p. 637-642 [How to Cite?]
 
AbstractWe show how positron annihilation can distinguish vacancies in undoped hydrogenated amorphous silicon by performing Variable Energy Positron Annihilation Spectroscopy experiments before and after light soaking. We find that vacancy clusters, di-vacancies and a new type of single vacancies are created in undoped as-grown a-Si:H thin film by light illumination. The fact that the vacancy clusters are eliminated by the thermal annealing suggests that the Staebler-Wronski effect is closely related to vacancy clusters in a-Si:H material. The creation of vacancy clusters and redistribution of di-vacancies and even single vacancies probably result in photo-induced structural changes in this material.
 
ISSN0272-9172
2012 SCImago Journal Rankings: 0.125
 
DC FieldValue
dc.contributor.authorZou, X
 
dc.contributor.authorChan, YC
 
dc.contributor.authorWebb, DP
 
dc.contributor.authorLam, YW
 
dc.contributor.authorLin, SH
 
dc.contributor.authorChan, FYM
 
dc.contributor.authorHu, YF
 
dc.contributor.authorWeng, X
 
dc.contributor.authorBeling, CD
 
dc.contributor.authorFung, SHY
 
dc.date.accessioned2007-10-30T07:04:54Z
 
dc.date.available2007-10-30T07:04:54Z
 
dc.date.issued1999
 
dc.description.abstractWe show how positron annihilation can distinguish vacancies in undoped hydrogenated amorphous silicon by performing Variable Energy Positron Annihilation Spectroscopy experiments before and after light soaking. We find that vacancy clusters, di-vacancies and a new type of single vacancies are created in undoped as-grown a-Si:H thin film by light illumination. The fact that the vacancy clusters are eliminated by the thermal annealing suggests that the Staebler-Wronski effect is closely related to vacancy clusters in a-Si:H material. The creation of vacancy clusters and redistribution of di-vacancies and even single vacancies probably result in photo-induced structural changes in this material.
 
dc.description.naturepublished_or_final_version
 
dc.format.extent308913 bytes
 
dc.format.extent13983 bytes
 
dc.format.extent5932 bytes
 
dc.format.mimetypeapplication/pdf
 
dc.format.mimetypeapplication/pdf
 
dc.format.mimetypetext/plain
 
dc.identifier.citationAmorphous and microcrystalline silicon technology-1998, Materials Research Society Symposium Proceedings, San Francisco, California, USA, 14-17 April 1998, v. 507, p. 637-642 [How to Cite?]
 
dc.identifier.hkuros40642
 
dc.identifier.issn0272-9172
2012 SCImago Journal Rankings: 0.125
 
dc.identifier.openurl
 
dc.identifier.urihttp://hdl.handle.net/10722/47033
 
dc.languageeng
 
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
 
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.subjectPhysics engineering chemistry
 
dc.titleIdentification of vacancy-like defects in high-rate grown a-Si before and after ligh soaking by vepas
 
dc.typeConference_Paper
 
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<contributor.author>Chan, FYM</contributor.author>
<contributor.author>Hu, YF</contributor.author>
<contributor.author>Weng, X</contributor.author>
<contributor.author>Beling, CD</contributor.author>
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