Conference Paper: Identification of vacancy-like defects in high-rate grown a-Si before and after ligh soaking by vepas

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TitleIdentification of vacancy-like defects in high-rate grown a-Si before and after ligh soaking by vepas
AuthorsZou, X
Chan, YC
Webb, DP
Lam, YW
Lin, SH
Chan, FYM
Hu, YF
Weng, X
Beling, CD
Fung, SHY
KeywordsPhysics engineering chemistry
Issue Date1999
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
CitationAmorphous and microcrystalline silicon technology-1998, Materials Research Society Symposium Proceedings, San Francisco, California, USA, 14-17 April 1998, v. 507, p. 637-642 [How to Cite?]
AbstractWe show how positron annihilation can distinguish vacancies in undoped hydrogenated amorphous silicon by performing Variable Energy Positron Annihilation Spectroscopy experiments before and after light soaking. We find that vacancy clusters, di-vacancies and a new type of single vacancies are created in undoped as-grown a-Si:H thin film by light illumination. The fact that the vacancy clusters are eliminated by the thermal annealing suggests that the Staebler-Wronski effect is closely related to vacancy clusters in a-Si:H material. The creation of vacancy clusters and redistribution of di-vacancies and even single vacancies probably result in photo-induced structural changes in this material.
ISSN0272-9172
2011 SCImago Journal Rankings: 0.029
DC Field
Value
dc.contributor.authorZou, X
dc.contributor.authorChan, YC
dc.contributor.authorWebb, DP
dc.contributor.authorLam, YW
dc.contributor.authorLin, SH
dc.contributor.authorChan, FYM
dc.contributor.authorHu, YF
dc.contributor.authorWeng, X
dc.contributor.authorBeling, CD
dc.contributor.authorFung, SHY
dc.date.accessioned2007-10-30T07:04:54Z
dc.date.available2007-10-30T07:04:54Z
dc.date.issued1999
dc.description.abstractWe show how positron annihilation can distinguish vacancies in undoped hydrogenated amorphous silicon by performing Variable Energy Positron Annihilation Spectroscopy experiments before and after light soaking. We find that vacancy clusters, di-vacancies and a new type of single vacancies are created in undoped as-grown a-Si:H thin film by light illumination. The fact that the vacancy clusters are eliminated by the thermal annealing suggests that the Staebler-Wronski effect is closely related to vacancy clusters in a-Si:H material. The creation of vacancy clusters and redistribution of di-vacancies and even single vacancies probably result in photo-induced structural changes in this material.
dc.description.naturepublished_or_final_version
dc.format.extent308913 bytes
dc.format.extent13983 bytes
dc.format.extent5932 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.identifier.citationAmorphous and microcrystalline silicon technology-1998, Materials Research Society Symposium Proceedings, San Francisco, California, USA, 14-17 April 1998, v. 507, p. 637-642 [How to Cite?]
dc.identifier.hkuros40642
dc.identifier.issn0272-9172
2011 SCImago Journal Rankings: 0.029
dc.identifier.openurl
dc.identifier.urihttp://hdl.handle.net/10722/47033
dc.languageeng
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
dc.subjectPhysics engineering chemistry
dc.titleIdentification of vacancy-like defects in high-rate grown a-Si before and after ligh soaking by vepas
dc.typeConference_Paper