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Article: Probing of microvoids in high-rate deposited α-Si : H thin films by variable energy positron annihilation spectroscopy

TitleProbing of microvoids in high-rate deposited α-Si : H thin films by variable energy positron annihilation spectroscopy
Authors
Issue Date1998
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/jmr
Citation
Journal Of Materials Research, 1998, v. 13 n. 10, p. 2833-2840 How to Cite?
AbstractIn this paper, positron annihilation measurements have been carried out on α-Si : H thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at high and low rates by means of the variable energy positron beam Doppler-broadening technique. The depth profiles of microvoids in the films grown under different conditions have been determined. We found a smaller void fraction in the surface region of all films compared to the bulk, and a smaller void fraction in low rate than in high growth rate films. By plotting S and W parameters in the (S, W) plane, we have shown that the vacancies in all of the high-rate and low-rate deposited intrinsic samples, and in differently doped low-rate samples are of the same nature, although there appears to be a higher density of defects in the boron than phosphorus doped films. The depth profiles of the microvoid-like defects in the α-Si : H films are extracted by use of the VEPFIT program.
Persistent Identifierhttp://hdl.handle.net/10722/174763
ISSN
2015 Impact Factor: 1.579
2015 SCImago Journal Rankings: 0.664
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorZou, Xen_HK
dc.contributor.authorWebb, DPen_HK
dc.contributor.authorChan, YCen_HK
dc.contributor.authorLam, YWen_HK
dc.contributor.authorHu, YFen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2012-11-26T08:47:19Z-
dc.date.available2012-11-26T08:47:19Z-
dc.date.issued1998en_HK
dc.identifier.citationJournal Of Materials Research, 1998, v. 13 n. 10, p. 2833-2840en_HK
dc.identifier.issn0884-2914en_HK
dc.identifier.urihttp://hdl.handle.net/10722/174763-
dc.description.abstractIn this paper, positron annihilation measurements have been carried out on α-Si : H thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at high and low rates by means of the variable energy positron beam Doppler-broadening technique. The depth profiles of microvoids in the films grown under different conditions have been determined. We found a smaller void fraction in the surface region of all films compared to the bulk, and a smaller void fraction in low rate than in high growth rate films. By plotting S and W parameters in the (S, W) plane, we have shown that the vacancies in all of the high-rate and low-rate deposited intrinsic samples, and in differently doped low-rate samples are of the same nature, although there appears to be a higher density of defects in the boron than phosphorus doped films. The depth profiles of the microvoid-like defects in the α-Si : H films are extracted by use of the VEPFIT program.en_HK
dc.languageengen_US
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/jmren_HK
dc.relation.ispartofJournal of Materials Researchen_HK
dc.rightsJournal of Materials Research. Copyright © Materials Research Society-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleProbing of microvoids in high-rate deposited α-Si : H thin films by variable energy positron annihilation spectroscopyen_HK
dc.typeArticleen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1557/JMR.1998.0387-
dc.identifier.scopuseid_2-s2.0-0032187042en_HK
dc.identifier.hkuros39173-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032187042&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume13en_HK
dc.identifier.issue10en_HK
dc.identifier.spage2833en_HK
dc.identifier.epage2840en_HK
dc.identifier.isiWOS:000076362100017-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZou, X=18234346500en_HK
dc.identifier.scopusauthoridWebb, DP=7401528584en_HK
dc.identifier.scopusauthoridChan, YC=7403676038en_HK
dc.identifier.scopusauthoridLam, YW=7202563950en_HK
dc.identifier.scopusauthoridHu, YF=7407119615en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK

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