Article: Photoinduced Dehydrogenation of Defects in Undoped a-Si:H Using Positron Annihilation Spectroscopy

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TitlePhotoinduced Dehydrogenation of Defects in Undoped a-Si:H Using Positron Annihilation Spectroscopy
AuthorsZou, X3
Chan, YC3
Webb, DP3
Lam, YW3
Hu, YF1
Beling, CD1
Fung, S1
Weng, HM2
KeywordsPhysics
Issue Date2000
PublisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.org
CitationPhysical Review Letters, 2000, v. 84 n. 4, p. 769-772 [How to Cite?]
DOI: http://dx.doi.org/10.1103/PhysRevLett.84.769
AbstractWe report changes in variable-energy positron annihilation spectroscopy measurements on undoped hydrogenated amorphous silicon films after light soaking. The change, seen predominantly in the high momentum band of the annihilation radiation, is not reversed by thermal annealing. We suggest, following recent models of the Staebler-Wronski effect, that light exposure induces hydrogen trapped in vacancylikc detects to become mobile in the Si network. The observations place constraints on models of hydrogen motion fitting macroscopic Staebler-Wronski effect kinetics and may help to achieve a definitive description of metastability in a-Si:H.
ISSN0031-9007
2011 Impact Factor: 7.37
2011 SCImago Journal Rankings: 0.633
DOIhttp://dx.doi.org/10.1103/PhysRevLett.84.769
ISI Accession Number IDWOS:000084891700048
ReferencesReferences in Scopus
DC Field
Value
dc.contributor.authorZou, X
dc.contributor.authorChan, YC
dc.contributor.authorWebb, DP
dc.contributor.authorLam, YW
dc.contributor.authorHu, YF
dc.contributor.authorBeling, CD
dc.contributor.authorFung, S
dc.contributor.authorWeng, HM
dc.date.accessioned2007-01-08T02:31:23Z
dc.date.available2007-01-08T02:31:23Z
dc.date.issued2000
dc.description.abstractWe report changes in variable-energy positron annihilation spectroscopy measurements on undoped hydrogenated amorphous silicon films after light soaking. The change, seen predominantly in the high momentum band of the annihilation radiation, is not reversed by thermal annealing. We suggest, following recent models of the Staebler-Wronski effect, that light exposure induces hydrogen trapped in vacancylikc detects to become mobile in the Si network. The observations place constraints on models of hydrogen motion fitting macroscopic Staebler-Wronski effect kinetics and may help to achieve a definitive description of metastability in a-Si:H.
dc.description.naturepublished_or_final_version
dc.format.extent73703 bytes
dc.format.extent9781 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.identifier.citationPhysical Review Letters, 2000, v. 84 n. 4, p. 769-772 [How to Cite?]
DOI: http://dx.doi.org/10.1103/PhysRevLett.84.769
dc.identifier.doihttp://dx.doi.org/10.1103/PhysRevLett.84.769
dc.identifier.epage772
dc.identifier.hkuros47811
dc.identifier.isiWOS:000084891700048
dc.identifier.issn0031-9007
2011 Impact Factor: 7.37
2011 SCImago Journal Rankings: 0.633
dc.identifier.issue4
dc.identifier.openurl
dc.identifier.scopuseid_2-s2.0-0000224753
dc.identifier.spage769
dc.identifier.urihttp://hdl.handle.net/10722/42194
dc.identifier.volume84
dc.languageeng
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.org
dc.publisher.placeUnited States
dc.relation.ispartofPhysical Review Letters
dc.relation.referencesReferences in Scopus
dc.rightsPhysical Review Letters. Copyright © American Physical Society.
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
dc.subjectPhysics
dc.titlePhotoinduced Dehydrogenation of Defects in Undoped a-Si:H Using Positron Annihilation Spectroscopy
dc.typeArticle
Author Affiliations
  1. The University of Hong Kong
  2. University of Science and Technology of China
  3. City University of Hong Kong