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Article: Photoinduced Dehydrogenation of Defects in Undoped a-Si:H Using Positron Annihilation Spectroscopy
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TitlePhotoinduced Dehydrogenation of Defects in Undoped a-Si:H Using Positron Annihilation Spectroscopy
 
AuthorsZou, X3
Chan, YC3
Webb, DP3
Lam, YW3
Hu, YF1
Beling, CD1
Fung, S1
Weng, HM2
 
KeywordsPhysics
 
Issue Date2000
 
PublisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.org
 
CitationPhysical Review Letters, 2000, v. 84 n. 4, p. 769-772 [How to Cite?]
DOI: http://dx.doi.org/10.1103/PhysRevLett.84.769
 
AbstractWe report changes in variable-energy positron annihilation spectroscopy measurements on undoped hydrogenated amorphous silicon films after light soaking. The change, seen predominantly in the high momentum band of the annihilation radiation, is not reversed by thermal annealing. We suggest, following recent models of the Staebler-Wronski effect, that light exposure induces hydrogen trapped in vacancylikc detects to become mobile in the Si network. The observations place constraints on models of hydrogen motion fitting macroscopic Staebler-Wronski effect kinetics and may help to achieve a definitive description of metastability in a-Si:H.
 
ISSN0031-9007
2012 Impact Factor: 7.943
2012 SCImago Journal Rankings: 4.537
 
DOIhttp://dx.doi.org/10.1103/PhysRevLett.84.769
 
ISI Accession Number IDWOS:000084891700048
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorZou, X
 
dc.contributor.authorChan, YC
 
dc.contributor.authorWebb, DP
 
dc.contributor.authorLam, YW
 
dc.contributor.authorHu, YF
 
dc.contributor.authorBeling, CD
 
dc.contributor.authorFung, S
 
dc.contributor.authorWeng, HM
 
dc.date.accessioned2007-01-08T02:31:23Z
 
dc.date.available2007-01-08T02:31:23Z
 
dc.date.issued2000
 
dc.description.abstractWe report changes in variable-energy positron annihilation spectroscopy measurements on undoped hydrogenated amorphous silicon films after light soaking. The change, seen predominantly in the high momentum band of the annihilation radiation, is not reversed by thermal annealing. We suggest, following recent models of the Staebler-Wronski effect, that light exposure induces hydrogen trapped in vacancylikc detects to become mobile in the Si network. The observations place constraints on models of hydrogen motion fitting macroscopic Staebler-Wronski effect kinetics and may help to achieve a definitive description of metastability in a-Si:H.
 
dc.description.naturepublished_or_final_version
 
dc.format.extent73703 bytes
 
dc.format.extent9781 bytes
 
dc.format.mimetypeapplication/pdf
 
dc.format.mimetypetext/plain
 
dc.identifier.citationPhysical Review Letters, 2000, v. 84 n. 4, p. 769-772 [How to Cite?]
DOI: http://dx.doi.org/10.1103/PhysRevLett.84.769
 
dc.identifier.doihttp://dx.doi.org/10.1103/PhysRevLett.84.769
 
dc.identifier.epage772
 
dc.identifier.hkuros47811
 
dc.identifier.isiWOS:000084891700048
 
dc.identifier.issn0031-9007
2012 Impact Factor: 7.943
2012 SCImago Journal Rankings: 4.537
 
dc.identifier.issue4
 
dc.identifier.openurl
 
dc.identifier.scopuseid_2-s2.0-0000224753
 
dc.identifier.spage769
 
dc.identifier.urihttp://hdl.handle.net/10722/42194
 
dc.identifier.volume84
 
dc.languageeng
 
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.org
 
dc.publisher.placeUnited States
 
dc.relation.ispartofPhysical Review Letters
 
dc.relation.referencesReferences in Scopus
 
dc.rightsPhysical Review Letters. Copyright © American Physical Society.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.subjectPhysics
 
dc.titlePhotoinduced Dehydrogenation of Defects in Undoped a-Si:H Using Positron Annihilation Spectroscopy
 
dc.typeArticle
 
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Author Affiliations
  1. The University of Hong Kong
  2. University of Science and Technology of China
  3. City University of Hong Kong