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Browsing by Author Evans, HL
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Showing results 3 to 14 of 14
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Title
Author(s)
Issue Date
Determination of grain boundary barrier height and interface states by a focused laser beam
Journal:
Applied Physics Letters
Poon, E
Yang, ES
Evans, HL
Hwang, W
Osgood Jr, RM
1983
Effect of Schottky barrier height on EL2 measurement by deep-level transient spectroscopy
Journal:
Journal of Applied Physics
Ma, QY
Schmidt, MT
Wu, X
Evans, HL
Yang, ES
1988
Electronic Properties Of Grain Boundaries In Polycrystalline Silicon
Proceeding/Conference:
Proceedings of SPIE - The International Society for Optical Engineering
Yang, ES
Poon, E
Evans, HL
Hwang, W
Song, JS
Wu, CM
1983
Electronic states at silicide-silicon interfaces
Journal:
Physical Review Letters
Ho, PS
Yang, ES
Evans, HL
Wu, X
1986
Heterojunction bipolar transistor with separate carrier injection and confinement
Journal:
IEEE Transactions on Electron Devices
Luo, LF
Evans, HL
Yang, ES
1989
An improved differential voltage technique for capacitance measurement
Journal:
Solid State Electronics
Wu, X
Evans, HL
Yang, ES
1988
MEASUREMENT OF GRAIN BOUNDARY PARAMETERS BY LASER-SPOT PHOTOCONDUCTIVITY.
Proceeding/Conference:
Materials Research Society Symposia Proceedings
Poon, E
Evans, HL
Hwang, W
Osgood Jr, RM
Yang, ES
1983
Measurement of interface states in palladium silicon diodes
Journal:
Journal of Applied Physics
Evans, HL
Wu, X
Yang, ES
Ho, PS
1986
Negative capacitance at metal-semiconductor interfaces
Journal:
Journal of Applied Physics
Wu, X
Yang, ES
Evans, HL
1990
Photoconductance transient response in polycrystalline silicon
Journal:
Journal of Applied Physics
Poon, E
Hwang, W
Yang, ES
Evans, HL
1985
Reply to "comment on 'negative capacitance at metal-semiconductor interfaces'" [J. Appl. Phys. 70, 1090 (1991)]
Journal:
Journal of Applied Physics
Wu, X
Evans, HL
Yang, ES
1991
Schottky barrier, electronic states and microstructure at Ni silicide-silicon interfaces
Journal:
Surface Science
Ho, PS
Liehr, M
Schmid, PE
Legoues, FK
Yang, ES
Evans, HL
Wu, X
1986