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Article: Schottky barrier, electronic states and microstructure at Ni silicide-silicon interfaces

TitleSchottky barrier, electronic states and microstructure at Ni silicide-silicon interfaces
Authors
Issue Date1986
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/susc
Citation
Surface Science, 1986, v. 168 n. 1-3, p. 184-192 How to Cite?
AbstractBarrier height and interface states have been measured and correlated to the microstructure of the Ni silicide-Si interfaces, including the type A and type B NiSi2 and a type C NiSi. All these interfaces can be formed with near perfect structures to yield a barrier height of 0.78 eV. Less perfect interfaces formed under less than ideal conditions or with impurity incorporation deteriorate the barrier height to 0.66 eV. The density and distribution of the interface states correlate well with the structural perfection. These results suggest that the barrier height is determined primarily by the structural perfection of the interface instead of the specific type of epitaxy. © 1986.
Persistent Identifierhttp://hdl.handle.net/10722/155293
ISSN
2015 Impact Factor: 1.931
2015 SCImago Journal Rankings: 0.792

 

DC FieldValueLanguage
dc.contributor.authorHo, PSen_US
dc.contributor.authorLiehr, Men_US
dc.contributor.authorSchmid, PEen_US
dc.contributor.authorLegoues, FKen_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorEvans, HLen_US
dc.contributor.authorWu, Xen_US
dc.date.accessioned2012-08-08T08:32:45Z-
dc.date.available2012-08-08T08:32:45Z-
dc.date.issued1986en_US
dc.identifier.citationSurface Science, 1986, v. 168 n. 1-3, p. 184-192en_US
dc.identifier.issn0039-6028en_US
dc.identifier.urihttp://hdl.handle.net/10722/155293-
dc.description.abstractBarrier height and interface states have been measured and correlated to the microstructure of the Ni silicide-Si interfaces, including the type A and type B NiSi2 and a type C NiSi. All these interfaces can be formed with near perfect structures to yield a barrier height of 0.78 eV. Less perfect interfaces formed under less than ideal conditions or with impurity incorporation deteriorate the barrier height to 0.66 eV. The density and distribution of the interface states correlate well with the structural perfection. These results suggest that the barrier height is determined primarily by the structural perfection of the interface instead of the specific type of epitaxy. © 1986.en_US
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/suscen_US
dc.relation.ispartofSurface Scienceen_US
dc.titleSchottky barrier, electronic states and microstructure at Ni silicide-silicon interfacesen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-25944437144en_US
dc.identifier.volume168en_US
dc.identifier.issue1-3en_US
dc.identifier.spage184en_US
dc.identifier.epage192en_US
dc.publisher.placeNetherlandsen_US
dc.identifier.scopusauthoridHo, PS=24351761400en_US
dc.identifier.scopusauthoridLiehr, M=6603676708en_US
dc.identifier.scopusauthoridSchmid, PE=7202657712en_US
dc.identifier.scopusauthoridLegoues, FK=7004465202en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridEvans, HL=7401520988en_US
dc.identifier.scopusauthoridWu, X=7407065023en_US

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