File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Photoconductance transient response in polycrystalline silicon

TitlePhotoconductance transient response in polycrystalline silicon
Authors
Issue Date1985
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1985, v. 57 n. 2, p. 338-344 How to Cite?
AbstractThe photoconductance transient response in polycrystalline silicon has been studied theoretically and experimentally. Shockley-Read-Hall statistics are used to describe the emission and capture processes at the grain-boundary traps. Under appropriate conditions, the minority carrier capture and emission time constants of the grain-boundary trap can be directly obtained from the photoconductance transient response. The photoconductance method is therefore useful for studying grain-boundary deep level states. The special case when a focused laser spot is employed is also discussed. From the experimental data obtained from large-grain Wacker polycrystalline silicon, we have discovered a donor-like level at 0.48 eV below the conduction band with a concentration of 2×10 10 cm -2. The electron (minority carrier) lifetime is found to be about 6×10 - 10-10 -9 s.
Persistent Identifierhttp://hdl.handle.net/10722/155407
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorPoon, Een_US
dc.contributor.authorHwang, Wen_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorEvans, HLen_US
dc.date.accessioned2012-08-08T08:33:20Z-
dc.date.available2012-08-08T08:33:20Z-
dc.date.issued1985en_US
dc.identifier.citationJournal Of Applied Physics, 1985, v. 57 n. 2, p. 338-344en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/155407-
dc.description.abstractThe photoconductance transient response in polycrystalline silicon has been studied theoretically and experimentally. Shockley-Read-Hall statistics are used to describe the emission and capture processes at the grain-boundary traps. Under appropriate conditions, the minority carrier capture and emission time constants of the grain-boundary trap can be directly obtained from the photoconductance transient response. The photoconductance method is therefore useful for studying grain-boundary deep level states. The special case when a focused laser spot is employed is also discussed. From the experimental data obtained from large-grain Wacker polycrystalline silicon, we have discovered a donor-like level at 0.48 eV below the conduction band with a concentration of 2×10 10 cm -2. The electron (minority carrier) lifetime is found to be about 6×10 - 10-10 -9 s.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titlePhotoconductance transient response in polycrystalline siliconen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.334811en_US
dc.identifier.scopuseid_2-s2.0-36549091756en_US
dc.identifier.volume57en_US
dc.identifier.issue2en_US
dc.identifier.spage338en_US
dc.identifier.epage344en_US
dc.identifier.isiWOS:A1985AAD2500029-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridPoon, E=7003615942en_US
dc.identifier.scopusauthoridHwang, W=25630510100en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridEvans, HL=7401520988en_US

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats